Transistor - FET, MOSFET - Array

Rumah
Transistor - FET, MOSFET - Array

Diodes Incorporated

DMP2004DWK-7

BAGIAN SAHAM: 187523

Tipe FET: 2 P-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 20V, Arus - Pembuangan Kontinu (Id) @ 25°C: 430mA, Rds Aktif (Maks) @ Id, Vgs: 900 mOhm @ 430mA, 4.5V, Vgs(th) (Maks) @ Id: 1V @ 250µA,

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Diodes Incorporated

DMN2028UFU-7

BAGIAN SAHAM: 120117

Tipe FET: 2 N-Channel (Dual) Common Drain, Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 20V, Arus - Pembuangan Kontinu (Id) @ 25°C: 7.5A, Rds Aktif (Maks) @ Id, Vgs: 20.2 mOhm @ 4.5A, 4.5V, Vgs(th) (Maks) @ Id: 1V @ 250µA,

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Diodes Incorporated

DMC4050SSD-13

BAGIAN SAHAM: 151827

Tipe FET: N and P-Channel, Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 40V, Arus - Pembuangan Kontinu (Id) @ 25°C: 5.3A, Rds Aktif (Maks) @ Id, Vgs: 45 mOhm @ 3A, 10V, Vgs(th) (Maks) @ Id: 1.8V @ 250µA,

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Diodes Incorporated

DMP3028LSD-13

BAGIAN SAHAM: 174334

Tipe FET: 2 P-Channel (Dual), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 30V, Arus - Pembuangan Kontinu (Id) @ 25°C: 6A, Rds Aktif (Maks) @ Id, Vgs: 25 mOhm @ 7A, 10V, Vgs(th) (Maks) @ Id: 3V @ 250µA,

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Diodes Incorporated

DMN2300UFL4-7

BAGIAN SAHAM: 182197

Tipe FET: 2 N-Channel (Dual), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 20V, Arus - Pembuangan Kontinu (Id) @ 25°C: 2.11A (Ta), Rds Aktif (Maks) @ Id, Vgs: 195 mOhm @ 300mA, 4.5V, Vgs(th) (Maks) @ Id: 950mV @ 250µA,

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Diodes Incorporated

DMN3190LDW-13

BAGIAN SAHAM: 160165

Tipe FET: 2 N-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 30V, Arus - Pembuangan Kontinu (Id) @ 25°C: 1A, Rds Aktif (Maks) @ Id, Vgs: 190 mOhm @ 1.3A, 10V, Vgs(th) (Maks) @ Id: 2.8V @ 250µA,

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Diodes Incorporated

DMC3021LK4-13

BAGIAN SAHAM: 125872

Tipe FET: N and P-Channel, Common Drain, Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 30V, Arus - Pembuangan Kontinu (Id) @ 25°C: 9.4A, 6.8A, Rds Aktif (Maks) @ Id, Vgs: 21 mOhm @ 7A, 10V, Vgs(th) (Maks) @ Id: 2.1V @ 250µA,

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Diodes Incorporated

ZXMD63N02XTA

BAGIAN SAHAM: 98634

Tipe FET: 2 N-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 20V, Arus - Pembuangan Kontinu (Id) @ 25°C: 2.5A, Rds Aktif (Maks) @ Id, Vgs: 130 mOhm @ 1.7A, 4.5V, Vgs(th) (Maks) @ Id: 3V @ 250µA,

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Diodes Incorporated

DMN2041UFDB-13

BAGIAN SAHAM: 133918

Tipe FET: 2 N-Channel (Dual), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 20V, Arus - Pembuangan Kontinu (Id) @ 25°C: 4.7A, Rds Aktif (Maks) @ Id, Vgs: 40 mOhm @ 4.2A, 4.5V, Vgs(th) (Maks) @ Id: 1.4V @ 250µA,

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Diodes Incorporated

DMN3012LFG-7

BAGIAN SAHAM: 260

Tipe FET: 2 N-Channel (Dual), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 30V, Arus - Pembuangan Kontinu (Id) @ 25°C: 20A (Tc), Rds Aktif (Maks) @ Id, Vgs: 12 mOhm @ 15A, 5V, 6 mOhm @ 15A, 5V, Vgs(th) (Maks) @ Id: 2.1V @ 250µA, 1.15V @ 250µA,

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DMNH6042SSDQ-13

Diodes Incorporated

DMNH6042SSDQ-13

BAGIAN SAHAM: 171893

Tipe FET: 2 N-Channel (Dual), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 60V, Arus - Pembuangan Kontinu (Id) @ 25°C: 16.7A (Tc), Rds Aktif (Maks) @ Id, Vgs: 50 mOhm @ 5.1A, 10V, Vgs(th) (Maks) @ Id: 3V @ 250µA,

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Diodes Incorporated

ZXMC3A17DN8TA

BAGIAN SAHAM: 125228

Tipe FET: N and P-Channel, Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 30V, Arus - Pembuangan Kontinu (Id) @ 25°C: 4.1A, 3.4A, Rds Aktif (Maks) @ Id, Vgs: 50 mOhm @ 7.8A, 10V, Vgs(th) (Maks) @ Id: 1V @ 250µA (Min),

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DMC3028LSDXQ-13

Diodes Incorporated

DMC3028LSDXQ-13

BAGIAN SAHAM: 198368

Tipe FET: N and P-Channel, Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 30V, Arus - Pembuangan Kontinu (Id) @ 25°C: 5.5A, 5.8A, Rds Aktif (Maks) @ Id, Vgs: 27 mOhm @ 6A, 10V, Vgs(th) (Maks) @ Id: 3V @ 250µA,

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Diodes Incorporated

DMN2016LFG-7

BAGIAN SAHAM: 115776

Tipe FET: 2 N-Channel (Dual) Common Drain, Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 20V, Arus - Pembuangan Kontinu (Id) @ 25°C: 5.2A, Rds Aktif (Maks) @ Id, Vgs: 18 mOhm @ 6A, 4.5V, Vgs(th) (Maks) @ Id: 1.1V @ 250µA,

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Diodes Incorporated

DMG6898LSDQ-13

BAGIAN SAHAM: 192348

Tipe FET: 2 N-Channel (Dual), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 20V, Arus - Pembuangan Kontinu (Id) @ 25°C: 9.5A, Rds Aktif (Maks) @ Id, Vgs: 16 mOhm @ 9.4A, 4.5V, Vgs(th) (Maks) @ Id: 1.5V @ 250µA,

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Diodes Incorporated

DMHT6016LFJ-13

BAGIAN SAHAM: 96906

Tipe FET: 4 N-Channel, Fitur FET: Standard, Arus - Pembuangan Kontinu (Id) @ 25°C: 14.8A (Ta), Rds Aktif (Maks) @ Id, Vgs: 22 mOhm @ 10A, 10V, Vgs(th) (Maks) @ Id: 3V @ 250µA,

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Diodes Incorporated

ZXMHN6A07T8TA

BAGIAN SAHAM: 222

Tipe FET: 4 N-Channel (H-Bridge), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 60V, Arus - Pembuangan Kontinu (Id) @ 25°C: 1.4A, Rds Aktif (Maks) @ Id, Vgs: 300 mOhm @ 1.8A, 10V, Vgs(th) (Maks) @ Id: 3V @ 250µA,

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Diodes Incorporated

DMN3016LDN-7

BAGIAN SAHAM: 134043

Tipe FET: 2 N-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 30V, Arus - Pembuangan Kontinu (Id) @ 25°C: 7.3A, Rds Aktif (Maks) @ Id, Vgs: 20 mOhm @ 11A, 10V, Vgs(th) (Maks) @ Id: 2V @ 250µA,

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Diodes Incorporated

ZXMN2AMCTA

BAGIAN SAHAM: 189

Tipe FET: 2 N-Channel (Dual), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 20V, Arus - Pembuangan Kontinu (Id) @ 25°C: 3.7A (Ta), Rds Aktif (Maks) @ Id, Vgs: 120 mOhm @ 4A, 4.5V, Vgs(th) (Maks) @ Id: 3V @ 250µA,

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Diodes Incorporated

DMN63D1LV-7

BAGIAN SAHAM: 9996

Tipe FET: 2 N-Channel (Dual), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 60V, Arus - Pembuangan Kontinu (Id) @ 25°C: 550mA (Ta), Rds Aktif (Maks) @ Id, Vgs: 2 Ohm @ 500mA, 10V, Vgs(th) (Maks) @ Id: 2.5V @ 1mA,

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Diodes Incorporated

ZXMN3AMCTA

BAGIAN SAHAM: 128489

Tipe FET: 2 N-Channel (Dual), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 30V, Arus - Pembuangan Kontinu (Id) @ 25°C: 3.7A (Ta), Rds Aktif (Maks) @ Id, Vgs: 120 mOhm @ 2.5A, 10V, Vgs(th) (Maks) @ Id: 3V @ 250µA,

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Diodes Incorporated

DMN4027SSD-13

BAGIAN SAHAM: 149358

Tipe FET: 2 N-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 40V, Arus - Pembuangan Kontinu (Id) @ 25°C: 5.4A, Rds Aktif (Maks) @ Id, Vgs: 27 mOhm @ 7A, 10V, Vgs(th) (Maks) @ Id: 3V @ 250µA,

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Diodes Incorporated

ZXMN3F31DN8TA

BAGIAN SAHAM: 127158

Tipe FET: 2 N-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 30V, Arus - Pembuangan Kontinu (Id) @ 25°C: 5.7A, Rds Aktif (Maks) @ Id, Vgs: 24 mOhm @ 7A, 10V, Vgs(th) (Maks) @ Id: 3V @ 250µA,

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DMNH6021SPDQ-13

Diodes Incorporated

DMNH6021SPDQ-13

BAGIAN SAHAM: 153434

Tipe FET: 2 N-Channel (Dual), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 60V, Arus - Pembuangan Kontinu (Id) @ 25°C: 8.2A, 32A, Rds Aktif (Maks) @ Id, Vgs: 25 mOhm @ 15A, 10V, Vgs(th) (Maks) @ Id: 3V @ 250µA,

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Diodes Incorporated

DMN61D8LVT-13

BAGIAN SAHAM: 146214

Tipe FET: 2 N-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 60V, Arus - Pembuangan Kontinu (Id) @ 25°C: 630mA, Rds Aktif (Maks) @ Id, Vgs: 1.8 Ohm @ 150mA, 5V, Vgs(th) (Maks) @ Id: 2V @ 1mA,

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Diodes Incorporated

ZXMHC10A07N8TC

BAGIAN SAHAM: 135940

Tipe FET: 2 N and 2 P-Channel (H-Bridge), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 100V, Arus - Pembuangan Kontinu (Id) @ 25°C: 800mA, 680mA, Rds Aktif (Maks) @ Id, Vgs: 700 mOhm @ 1.5A, 10V, Vgs(th) (Maks) @ Id: 4V @ 250µA,

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Diodes Incorporated

ZXMC3A16DN8TC

BAGIAN SAHAM: 118900

Tipe FET: N and P-Channel, Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 30V, Arus - Pembuangan Kontinu (Id) @ 25°C: 4.9A, 4.1A, Rds Aktif (Maks) @ Id, Vgs: 35 mOhm @ 9A, 10V, Vgs(th) (Maks) @ Id: 1V @ 250µA (Min),

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Diodes Incorporated

DMP2075UFDB-7

BAGIAN SAHAM: 218

Tipe FET: 2 P-Channel (Dual), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 20V, Arus - Pembuangan Kontinu (Id) @ 25°C: 3.8A (Ta), Rds Aktif (Maks) @ Id, Vgs: 75 mOhm @ 2.9A, 4.5V, Vgs(th) (Maks) @ Id: 1.4V @ 250µA,

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Diodes Incorporated

DMP1046UFDB-7

BAGIAN SAHAM: 127126

Tipe FET: 2 P-Channel (Dual), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 12V, Arus - Pembuangan Kontinu (Id) @ 25°C: 3.8A, Rds Aktif (Maks) @ Id, Vgs: 61 mOhm @ 3.6A, 4.5V, Vgs(th) (Maks) @ Id: 1V @ 250µA,

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Diodes Incorporated

ZXMC3AMCTA

BAGIAN SAHAM: 166321

Tipe FET: N and P-Channel, Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 30V, Arus - Pembuangan Kontinu (Id) @ 25°C: 2.9A, 2.1A, Rds Aktif (Maks) @ Id, Vgs: 120 mOhm @ 2.5A, 10V, Vgs(th) (Maks) @ Id: 3V @ 250µA,

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Diodes Incorporated

ZXMN3A06DN8TA

BAGIAN SAHAM: 106246

Tipe FET: 2 N-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 30V, Arus - Pembuangan Kontinu (Id) @ 25°C: 4.9A, Rds Aktif (Maks) @ Id, Vgs: 35 mOhm @ 9A, 10V, Vgs(th) (Maks) @ Id: 1V @ 250µA (Min),

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Diodes Incorporated

DMN32D4SDW-7

BAGIAN SAHAM: 108857

Tipe FET: 2 N-Channel (Dual), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 30V, Arus - Pembuangan Kontinu (Id) @ 25°C: 650mA, Rds Aktif (Maks) @ Id, Vgs: 400 mOhm @ 250mA, 10V, Vgs(th) (Maks) @ Id: 1.6V @ 250µA,

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Diodes Incorporated

ZXMP3A16DN8TA

BAGIAN SAHAM: 85137

Tipe FET: 2 P-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 30V, Arus - Pembuangan Kontinu (Id) @ 25°C: 4.2A, Rds Aktif (Maks) @ Id, Vgs: 45 mOhm @ 4.2A, 10V, Vgs(th) (Maks) @ Id: 1V @ 250µA (Min),

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Diodes Incorporated

DMN61D8LVTQ-7

BAGIAN SAHAM: 110922

Tipe FET: 2 N-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 60V, Arus - Pembuangan Kontinu (Id) @ 25°C: 630mA, Rds Aktif (Maks) @ Id, Vgs: 1.8 Ohm @ 150mA, 5V, Vgs(th) (Maks) @ Id: 2V @ 1mA,

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Diodes Incorporated

DMC1016UPD-13

BAGIAN SAHAM: 160062

Tipe FET: N and P-Channel, Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 12V, 20V, Arus - Pembuangan Kontinu (Id) @ 25°C: 9.5A, 8.7A, Rds Aktif (Maks) @ Id, Vgs: 17 mOhm @ 11.8A, 4.5V, Vgs(th) (Maks) @ Id: 1.5V @ 250µA,

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Diodes Incorporated

DMN3032LFDB-7

BAGIAN SAHAM: 142454

Tipe FET: 2 N-Channel (Dual), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 30V, Arus - Pembuangan Kontinu (Id) @ 25°C: 6.2A, Rds Aktif (Maks) @ Id, Vgs: 30 mOhm @ 5.8A, 10V, Vgs(th) (Maks) @ Id: 2V @ 250µA,

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