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  • Dioda - Penyearah - Tunggal
8AF05NPP
Vishay Semiconductor Diodes Division

8AF05NPP

BAGIAN SAHAM: 119

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 50V, Arus - Rata-Rata Dikoreksi (Io): 50A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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80EPS12
Vishay Semiconductor Diodes Division

80EPS12

BAGIAN SAHAM: 112

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 1200V, Arus - Rata-Rata Dikoreksi (Io): 80A, Tegangan - Maju (Vf) (Maks) @ If: 1.17V @ 80A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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80EPS08
Vishay Semiconductor Diodes Division

80EPS08

BAGIAN SAHAM: 133

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 800V, Arus - Rata-Rata Dikoreksi (Io): 80A, Tegangan - Maju (Vf) (Maks) @ If: 1.17V @ 80A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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80EPF12
Vishay Semiconductor Diodes Division

80EPF12

BAGIAN SAHAM: 126

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 1200V, Arus - Rata-Rata Dikoreksi (Io): 80A, Tegangan - Maju (Vf) (Maks) @ If: 1.35V @ 80A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 480ns,

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80EPF10
Vishay Semiconductor Diodes Division

80EPF10

BAGIAN SAHAM: 66

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 1000V, Arus - Rata-Rata Dikoreksi (Io): 80A, Tegangan - Maju (Vf) (Maks) @ If: 1.35V @ 80A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 480ns,

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80EPF06
Vishay Semiconductor Diodes Division

80EPF06

BAGIAN SAHAM: 72

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-Rata Dikoreksi (Io): 80A, Tegangan - Maju (Vf) (Maks) @ If: 1.25V @ 80A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 190ns,

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80EPF02
Vishay Semiconductor Diodes Division

80EPF02

BAGIAN SAHAM: 115

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-Rata Dikoreksi (Io): 80A, Tegangan - Maju (Vf) (Maks) @ If: 1.25V @ 80A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 190ns,

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80EPF04
Vishay Semiconductor Diodes Division

80EPF04

BAGIAN SAHAM: 115

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-Rata Dikoreksi (Io): 80A, Tegangan - Maju (Vf) (Maks) @ If: 1.25V @ 80A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 190ns,

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8EWF10S
Vishay Semiconductor Diodes Division

8EWF10S

BAGIAN SAHAM: 68

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 1000V, Arus - Rata-Rata Dikoreksi (Io): 8A, Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 8A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 270ns,

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8EWF12S
Vishay Semiconductor Diodes Division

8EWF12S

BAGIAN SAHAM: 20

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 1200V, Arus - Rata-Rata Dikoreksi (Io): 8A, Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 8A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 270ns,

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8TQ100S
Vishay Semiconductor Diodes Division

8TQ100S

BAGIAN SAHAM: 10015

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-Rata Dikoreksi (Io): 8A, Tegangan - Maju (Vf) (Maks) @ If: 720mV @ 8A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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8TQ080S
Vishay Semiconductor Diodes Division

8TQ080S

BAGIAN SAHAM: 9992

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 80V, Arus - Rata-Rata Dikoreksi (Io): 8A, Tegangan - Maju (Vf) (Maks) @ If: 720mV @ 8A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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8TQ060
Vishay Semiconductor Diodes Division

8TQ060

BAGIAN SAHAM: 10041

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 60V, Arus - Rata-Rata Dikoreksi (Io): 8A, Tegangan - Maju (Vf) (Maks) @ If: 720mV @ 8A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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8TQ080
Vishay Semiconductor Diodes Division

8TQ080

BAGIAN SAHAM: 5059

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 80V, Arus - Rata-Rata Dikoreksi (Io): 8A, Tegangan - Maju (Vf) (Maks) @ If: 720mV @ 8A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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8EWS08S
Vishay Semiconductor Diodes Division

8EWS08S

BAGIAN SAHAM: 10060

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 800V, Arus - Rata-Rata Dikoreksi (Io): 8A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 8A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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8EWF06S
Vishay Semiconductor Diodes Division

8EWF06S

BAGIAN SAHAM: 10034

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-Rata Dikoreksi (Io): 8A, Tegangan - Maju (Vf) (Maks) @ If: 1.2V @ 8A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 140ns,

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8EWF06STRL
Vishay Semiconductor Diodes Division

8EWF06STRL

BAGIAN SAHAM: 10052

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-Rata Dikoreksi (Io): 8A, Tegangan - Maju (Vf) (Maks) @ If: 1.2V @ 8A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 140ns,

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8EWF02S
Vishay Semiconductor Diodes Division

8EWF02S

BAGIAN SAHAM: 10049

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-Rata Dikoreksi (Io): 8A, Tegangan - Maju (Vf) (Maks) @ If: 1.2V @ 8A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 140ns,

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8EWF04S
Vishay Semiconductor Diodes Division

8EWF04S

BAGIAN SAHAM: 9990

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-Rata Dikoreksi (Io): 8A, Tegangan - Maju (Vf) (Maks) @ If: 1.2V @ 8A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 140ns,

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85EPF04
Vishay Semiconductor Diodes Division

85EPF04

BAGIAN SAHAM: 10073

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-Rata Dikoreksi (Io): 85A, Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 85A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 190ns,

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95HQ015
Vishay Semiconductor Diodes Division

95HQ015

BAGIAN SAHAM: 9931

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 15V, Arus - Rata-Rata Dikoreksi (Io): 95A, Tegangan - Maju (Vf) (Maks) @ If: 460mV @ 95A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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AS1PK-M3/85A
Vishay Semiconductor Diodes Division

AS1PK-M3/85A

BAGIAN SAHAM: 118702

Tipe Dioda: Avalanche, Tegangan - DC Reverse (Vr) (Maks): 800V, Arus - Rata-Rata Dikoreksi (Io): 1.5A (DC), Tegangan - Maju (Vf) (Maks) @ If: 1.15V @ 1.5A, Kecepatan: Standard Recovery >500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 1.5µs,

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AS1PJHM3/85A
Vishay Semiconductor Diodes Division

AS1PJHM3/85A

BAGIAN SAHAM: 157782

Tipe Dioda: Avalanche, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-Rata Dikoreksi (Io): 1.5A (DC), Tegangan - Maju (Vf) (Maks) @ If: 1.15V @ 1.5A, Kecepatan: Standard Recovery >500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 1.5µs,

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AR1PKHM3/85A
Vishay Semiconductor Diodes Division

AR1PKHM3/85A

BAGIAN SAHAM: 110954

Tipe Dioda: Avalanche, Tegangan - DC Reverse (Vr) (Maks): 800V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.6V @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 120ns,

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AS1PG-M3/84A
Vishay Semiconductor Diodes Division

AS1PG-M3/84A

BAGIAN SAHAM: 115320

Tipe Dioda: Avalanche, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-Rata Dikoreksi (Io): 1.5A (DC), Tegangan - Maju (Vf) (Maks) @ If: 1.15V @ 1.5A, Kecepatan: Standard Recovery >500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 1.5µs,

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AS1PKHM3/85A
Vishay Semiconductor Diodes Division

AS1PKHM3/85A

BAGIAN SAHAM: 183191

Tipe Dioda: Avalanche, Tegangan - DC Reverse (Vr) (Maks): 800V, Arus - Rata-Rata Dikoreksi (Io): 1.5A (DC), Tegangan - Maju (Vf) (Maks) @ If: 1.15V @ 1.5A, Kecepatan: Standard Recovery >500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 1.5µs,

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AR1PG-M3/85A
Vishay Semiconductor Diodes Division

AR1PG-M3/85A

BAGIAN SAHAM: 143525

Tipe Dioda: Avalanche, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.25V @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 140ns,

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AS1PGHM3/84A
Vishay Semiconductor Diodes Division

AS1PGHM3/84A

BAGIAN SAHAM: 192739

Tipe Dioda: Avalanche, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-Rata Dikoreksi (Io): 1.5A (DC), Tegangan - Maju (Vf) (Maks) @ If: 1.15V @ 1.5A, Kecepatan: Standard Recovery >500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 1.5µs,

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AR1PKHM3/84A
Vishay Semiconductor Diodes Division

AR1PKHM3/84A

BAGIAN SAHAM: 137027

Tipe Dioda: Avalanche, Tegangan - DC Reverse (Vr) (Maks): 800V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.6V @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 120ns,

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AS1PKHM3/84A
Vishay Semiconductor Diodes Division

AS1PKHM3/84A

BAGIAN SAHAM: 186197

Tipe Dioda: Avalanche, Tegangan - DC Reverse (Vr) (Maks): 800V, Arus - Rata-Rata Dikoreksi (Io): 1.5A (DC), Tegangan - Maju (Vf) (Maks) @ If: 1.15V @ 1.5A, Kecepatan: Standard Recovery >500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 1.5µs,

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AS1PDHM3/85A
Vishay Semiconductor Diodes Division

AS1PDHM3/85A

BAGIAN SAHAM: 198666

Tipe Dioda: Avalanche, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-Rata Dikoreksi (Io): 1.5A (DC), Tegangan - Maju (Vf) (Maks) @ If: 1.15V @ 1.5A, Kecepatan: Standard Recovery >500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 1.5µs,

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AR1PGHM3/84A
Vishay Semiconductor Diodes Division

AR1PGHM3/84A

BAGIAN SAHAM: 164199

Tipe Dioda: Avalanche, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.25V @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 140ns,

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AR1PMHM3/85A
Vishay Semiconductor Diodes Division

AR1PMHM3/85A

BAGIAN SAHAM: 131724

Tipe Dioda: Avalanche, Tegangan - DC Reverse (Vr) (Maks): 1000V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.6V @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 120ns,

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AR1PD-M3/85A
Vishay Semiconductor Diodes Division

AR1PD-M3/85A

BAGIAN SAHAM: 106984

Tipe Dioda: Avalanche, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.25V @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 140ns,

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AR1PM-M3/85A
Vishay Semiconductor Diodes Division

AR1PM-M3/85A

BAGIAN SAHAM: 130479

Tipe Dioda: Avalanche, Tegangan - DC Reverse (Vr) (Maks): 1000V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.6V @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 120ns,

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AR1PJ-M3/85A
Vishay Semiconductor Diodes Division

AR1PJ-M3/85A

BAGIAN SAHAM: 147970

Tipe Dioda: Avalanche, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.25V @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 140ns,

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