Dioda - Penyearah - Tunggal | Produk Semikonduktor Diskrit | 100

40EPS12

BAGIAN SAHAM: 454

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 1200V, Arus - Rata-Rata Dikoreksi (Io): 40A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 40A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

40EPF12

BAGIAN SAHAM: 77

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 1200V, Arus - Rata-Rata Dikoreksi (Io): 40A, Tegangan - Maju (Vf) (Maks) @ If: 1.4V @ 40A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 450ns,

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Vishay Semiconductor Diodes Division

40EPF10

BAGIAN SAHAM: 97

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 1000V, Arus - Rata-Rata Dikoreksi (Io): 40A, Tegangan - Maju (Vf) (Maks) @ If: 1.4V @ 40A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 450ns,

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Vishay Semiconductor Diodes Division

40EPF02

BAGIAN SAHAM: 83

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-Rata Dikoreksi (Io): 40A, Tegangan - Maju (Vf) (Maks) @ If: 1.25V @ 40A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 180ns,

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Vishay Semiconductor Diodes Division

40EPF04

BAGIAN SAHAM: 94

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-Rata Dikoreksi (Io): 40A, Tegangan - Maju (Vf) (Maks) @ If: 1.25V @ 40A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 180ns,

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Vishay Semiconductor Diodes Division

40EPS08

BAGIAN SAHAM: 10037

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 800V, Arus - Rata-Rata Dikoreksi (Io): 40A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 40A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

50WQ06FNTRR

BAGIAN SAHAM: 1020

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 60V, Arus - Rata-Rata Dikoreksi (Io): 5.5A, Tegangan - Maju (Vf) (Maks) @ If: 570mV @ 5A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

50WQ10FNTRR

BAGIAN SAHAM: 181

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-Rata Dikoreksi (Io): 5.5A, Tegangan - Maju (Vf) (Maks) @ If: 770mV @ 5A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

50WQ10FNTRL

BAGIAN SAHAM: 152

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-Rata Dikoreksi (Io): 5.5A, Tegangan - Maju (Vf) (Maks) @ If: 770mV @ 5A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

50WQ06FNTRL

BAGIAN SAHAM: 94

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 60V, Arus - Rata-Rata Dikoreksi (Io): 5.5A, Tegangan - Maju (Vf) (Maks) @ If: 570mV @ 5A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

50WQ04FNTRR

BAGIAN SAHAM: 136

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 40V, Arus - Rata-Rata Dikoreksi (Io): 5.5A, Tegangan - Maju (Vf) (Maks) @ If: 510mV @ 5A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

50WQ04FNTRL

BAGIAN SAHAM: 158

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 40V, Arus - Rata-Rata Dikoreksi (Io): 5.5A, Tegangan - Maju (Vf) (Maks) @ If: 510mV @ 5A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

50WQ03FNTRR

BAGIAN SAHAM: 184

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 30V, Arus - Rata-Rata Dikoreksi (Io): 5.5A, Tegangan - Maju (Vf) (Maks) @ If: 460mV @ 5A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

50WQ03FNTRL

BAGIAN SAHAM: 138

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 30V, Arus - Rata-Rata Dikoreksi (Io): 5.5A, Tegangan - Maju (Vf) (Maks) @ If: 460mV @ 5A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

50WQ03FNTR

BAGIAN SAHAM: 130

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 30V, Arus - Rata-Rata Dikoreksi (Io): 5.5A, Tegangan - Maju (Vf) (Maks) @ If: 460mV @ 5A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

50WQ10FN

BAGIAN SAHAM: 10048

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-Rata Dikoreksi (Io): 5.5A, Tegangan - Maju (Vf) (Maks) @ If: 770mV @ 5A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

50WQ06FN

BAGIAN SAHAM: 5036

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 60V, Arus - Rata-Rata Dikoreksi (Io): 5.5A, Tegangan - Maju (Vf) (Maks) @ If: 570mV @ 5A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

50WQ04FNTR

BAGIAN SAHAM: 10085

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 40V, Arus - Rata-Rata Dikoreksi (Io): 5.5A, Tegangan - Maju (Vf) (Maks) @ If: 510mV @ 5A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

50WQ03FN

BAGIAN SAHAM: 5038

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 30V, Arus - Rata-Rata Dikoreksi (Io): 5.5A, Tegangan - Maju (Vf) (Maks) @ If: 460mV @ 5A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

50WQ04FN

BAGIAN SAHAM: 9990

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 40V, Arus - Rata-Rata Dikoreksi (Io): 5.5A, Tegangan - Maju (Vf) (Maks) @ If: 510mV @ 5A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

66PQ040

BAGIAN SAHAM: 22499

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 40V, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

65PQ015

BAGIAN SAHAM: 1105

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 15V, Arus - Rata-Rata Dikoreksi (Io): 65A, Tegangan - Maju (Vf) (Maks) @ If: 500mV @ 65A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

60CPF02

BAGIAN SAHAM: 1086

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-Rata Dikoreksi (Io): 60A, Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 60A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 180ns,

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Vishay Semiconductor Diodes Division

60EPU06

BAGIAN SAHAM: 319

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-Rata Dikoreksi (Io): 60A, Tegangan - Maju (Vf) (Maks) @ If: 1.68V @ 60A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 81ns,

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Vishay Semiconductor Diodes Division

60APU06

BAGIAN SAHAM: 245

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-Rata Dikoreksi (Io): 60A, Tegangan - Maju (Vf) (Maks) @ If: 1.68V @ 60A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 81ns,

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Vishay Semiconductor Diodes Division

60EPU04

BAGIAN SAHAM: 248

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-Rata Dikoreksi (Io): 60A, Tegangan - Maju (Vf) (Maks) @ If: 1.25V @ 60A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 85ns,

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Vishay Semiconductor Diodes Division

60APU04

BAGIAN SAHAM: 5070

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-Rata Dikoreksi (Io): 60A, Tegangan - Maju (Vf) (Maks) @ If: 1.25V @ 60A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 85ns,

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Vishay Semiconductor Diodes Division

60EPU02

BAGIAN SAHAM: 201

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-Rata Dikoreksi (Io): 60A, Tegangan - Maju (Vf) (Maks) @ If: 1.08V @ 60A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 35ns,

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Vishay Semiconductor Diodes Division

60APU02

BAGIAN SAHAM: 182

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-Rata Dikoreksi (Io): 60A, Tegangan - Maju (Vf) (Maks) @ If: 1.08V @ 60A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 35ns,

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Vishay Semiconductor Diodes Division

6TQ045STRR

BAGIAN SAHAM: 5057

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 45V, Arus - Rata-Rata Dikoreksi (Io): 6A, Tegangan - Maju (Vf) (Maks) @ If: 600mV @ 6A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

6TQ045STRL

BAGIAN SAHAM: 121

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 45V, Arus - Rata-Rata Dikoreksi (Io): 6A, Tegangan - Maju (Vf) (Maks) @ If: 600mV @ 6A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

6TQ035STRR

BAGIAN SAHAM: 157

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 35V, Arus - Rata-Rata Dikoreksi (Io): 6A, Tegangan - Maju (Vf) (Maks) @ If: 600mV @ 6A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

6TQ035STRL

BAGIAN SAHAM: 153

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 35V, Arus - Rata-Rata Dikoreksi (Io): 6A, Tegangan - Maju (Vf) (Maks) @ If: 600mV @ 6A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

60HFUR-600

BAGIAN SAHAM: 121

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-Rata Dikoreksi (Io): 60A, Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 60A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 80ns,

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Vishay Semiconductor Diodes Division

60HFUR-500

BAGIAN SAHAM: 191

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 500V, Arus - Rata-Rata Dikoreksi (Io): 60A, Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 60A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 80ns,

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Vishay Semiconductor Diodes Division

60HFUR-400

BAGIAN SAHAM: 164

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-Rata Dikoreksi (Io): 60A, Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 60A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 80ns,

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