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Transistor - FET, MOSFET - Array

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SI5513CDC-T1-E3
Vishay Siliconix

SI5513CDC-T1-E3

BAGIAN SAHAM: 128739

Tipe FET: N and P-Channel, Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 20V, Arus - Pembuangan Kontinu (Id) @ 25°C: 4A, 3.7A, Rds Aktif (Maks) @ Id, Vgs: 55 mOhm @ 4.3A, 4.5V, Vgs(th) (Maks) @ Id: 1.5V @ 250µA,

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SI4286DY-T1-GE3
Vishay Siliconix

SI4286DY-T1-GE3

BAGIAN SAHAM: 153479

Tipe FET: 2 N-Channel (Dual), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 40V, Arus - Pembuangan Kontinu (Id) @ 25°C: 7A, Rds Aktif (Maks) @ Id, Vgs: 32.5 mOhm @ 8A, 10V, Vgs(th) (Maks) @ Id: 2.5V @ 250µA,

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SQ4946AEY-T1_GE3
Vishay Siliconix

SQ4946AEY-T1_GE3

BAGIAN SAHAM: 121475

Tipe FET: 2 N-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 60V, Arus - Pembuangan Kontinu (Id) @ 25°C: 7A, Rds Aktif (Maks) @ Id, Vgs: 40 mOhm @ 4.5A, 10V, Vgs(th) (Maks) @ Id: 2.5V @ 250µA,

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SIB900EDK-T1-GE3
Vishay Siliconix

SIB900EDK-T1-GE3

BAGIAN SAHAM: 148740

Tipe FET: 2 N-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 20V, Arus - Pembuangan Kontinu (Id) @ 25°C: 1.5A, Rds Aktif (Maks) @ Id, Vgs: 225 mOhm @ 1.6A, 4.5V, Vgs(th) (Maks) @ Id: 1V @ 250µA,

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SI5515CDC-T1-E3
Vishay Siliconix

SI5515CDC-T1-E3

BAGIAN SAHAM: 195955

Tipe FET: N and P-Channel, Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 20V, Arus - Pembuangan Kontinu (Id) @ 25°C: 4A (Tc), Rds Aktif (Maks) @ Id, Vgs: 36 mOhm @ 6A, 4.5V, Vgs(th) (Maks) @ Id: 800mV @ 250µA,

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SQ3585EV-T1_GE3
Vishay Siliconix

SQ3585EV-T1_GE3

BAGIAN SAHAM: 2632

Tipe FET: N and P-Channel, Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 20V, Arus - Pembuangan Kontinu (Id) @ 25°C: 3.57A (Tc), 2.5A (Tc), Rds Aktif (Maks) @ Id, Vgs: 77 mOhm @ 1A, 4.5V, 166 mOhm @ 1A, 4.5V, Vgs(th) (Maks) @ Id: 1.5V @ 250µA,

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SI1922EDH-T1-GE3
Vishay Siliconix

SI1922EDH-T1-GE3

BAGIAN SAHAM: 148911

Tipe FET: 2 N-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 20V, Arus - Pembuangan Kontinu (Id) @ 25°C: 1.3A, Rds Aktif (Maks) @ Id, Vgs: 198 mOhm @ 1A, 4.5V, Vgs(th) (Maks) @ Id: 1V @ 250µA,

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SI7212DN-T1-GE3
Vishay Siliconix

SI7212DN-T1-GE3

BAGIAN SAHAM: 141942

Tipe FET: 2 N-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 30V, Arus - Pembuangan Kontinu (Id) @ 25°C: 4.9A, Rds Aktif (Maks) @ Id, Vgs: 36 mOhm @ 6.8A, 10V, Vgs(th) (Maks) @ Id: 1.6V @ 250µA,

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SQS966ENW-T1_GE3
Vishay Siliconix

SQS966ENW-T1_GE3

BAGIAN SAHAM: 2544

Tipe FET: 2 N-Channel (Dual), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 60V, Arus - Pembuangan Kontinu (Id) @ 25°C: 6A (Tc), Rds Aktif (Maks) @ Id, Vgs: 36 mOhm @ 1.25A, 10V, Vgs(th) (Maks) @ Id: 2.5V @ 250µA,

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SI1016CX-T1-GE3
Vishay Siliconix

SI1016CX-T1-GE3

BAGIAN SAHAM: 151464

Tipe FET: N and P-Channel, Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 20V, Rds Aktif (Maks) @ Id, Vgs: 396 mOhm @ 500mA, 4.5V, Vgs(th) (Maks) @ Id: 1V @ 250µA,

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SI1965DH-T1-GE3
Vishay Siliconix

SI1965DH-T1-GE3

BAGIAN SAHAM: 150223

Tipe FET: 2 P-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 12V, Arus - Pembuangan Kontinu (Id) @ 25°C: 1.3A, Rds Aktif (Maks) @ Id, Vgs: 390 mOhm @ 1A, 4.5V, Vgs(th) (Maks) @ Id: 1V @ 250µA,

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SI1016X-T1-GE3
Vishay Siliconix

SI1016X-T1-GE3

BAGIAN SAHAM: 135127

Tipe FET: N and P-Channel, Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 20V, Arus - Pembuangan Kontinu (Id) @ 25°C: 485mA, 370mA, Rds Aktif (Maks) @ Id, Vgs: 700 mOhm @ 600mA, 4.5V, Vgs(th) (Maks) @ Id: 1V @ 250µA,

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SI6926ADQ-T1-E3
Vishay Siliconix

SI6926ADQ-T1-E3

BAGIAN SAHAM: 129467

Tipe FET: 2 N-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 20V, Arus - Pembuangan Kontinu (Id) @ 25°C: 4.1A, Rds Aktif (Maks) @ Id, Vgs: 30 mOhm @ 4.5A, 4.5V, Vgs(th) (Maks) @ Id: 1V @ 250µA,

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SI1023CX-T1-GE3
Vishay Siliconix

SI1023CX-T1-GE3

BAGIAN SAHAM: 136072

Tipe FET: 2 P-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 20V, Rds Aktif (Maks) @ Id, Vgs: 756 mOhm @ 350mA, 4.5V, Vgs(th) (Maks) @ Id: 1V @ 250µA,

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SQ3989EV-T1_GE3
Vishay Siliconix

SQ3989EV-T1_GE3

BAGIAN SAHAM: 124228

Tipe FET: 2 P-Channel (Dual), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 30V, Arus - Pembuangan Kontinu (Id) @ 25°C: 2.5A (Tc), Rds Aktif (Maks) @ Id, Vgs: 155 mOhm @ 400mA, 10V, Vgs(th) (Maks) @ Id: 1.5V @ 250µA,

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SI4670DY-T1-GE3
Vishay Siliconix

SI4670DY-T1-GE3

BAGIAN SAHAM: 139899

Tipe FET: 2 N-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 25V, Arus - Pembuangan Kontinu (Id) @ 25°C: 8A, Rds Aktif (Maks) @ Id, Vgs: 23 mOhm @ 7A, 10V, Vgs(th) (Maks) @ Id: 2.2V @ 250µA,

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SIZ300DT-T1-GE3
Vishay Siliconix

SIZ300DT-T1-GE3

BAGIAN SAHAM: 146800

Tipe FET: 2 N-Channel (Half Bridge), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 30V, Arus - Pembuangan Kontinu (Id) @ 25°C: 11A, 28A, Rds Aktif (Maks) @ Id, Vgs: 24 mOhm @ 9.8A, 10V, Vgs(th) (Maks) @ Id: 2.4V @ 250µA,

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SI7540ADP-T1-GE3
Vishay Siliconix

SI7540ADP-T1-GE3

BAGIAN SAHAM: 87195

Tipe FET: N and P-Channel, Tiriskan ke Tegangan Sumber (Vdss): 20V, Arus - Pembuangan Kontinu (Id) @ 25°C: 12A, 9A, Rds Aktif (Maks) @ Id, Vgs: 28 mOhm @ 12A, 10V, Vgs(th) (Maks) @ Id: 1.4V @ 250µA,

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SI4943CDY-T1-E3
Vishay Siliconix

SI4943CDY-T1-E3

BAGIAN SAHAM: 89694

Tipe FET: 2 P-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 20V, Arus - Pembuangan Kontinu (Id) @ 25°C: 8A, Rds Aktif (Maks) @ Id, Vgs: 19.2 mOhm @ 8.3A, 10V, Vgs(th) (Maks) @ Id: 3V @ 250µA,

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SQJ992EP-T1_GE3
Vishay Siliconix

SQJ992EP-T1_GE3

BAGIAN SAHAM: 130455

Tipe FET: 2 N-Channel (Dual), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 60V, Arus - Pembuangan Kontinu (Id) @ 25°C: 15A, Rds Aktif (Maks) @ Id, Vgs: 56.2 mOhm @ 3.7A, 10V, Vgs(th) (Maks) @ Id: 2.5V @ 250µA,

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SQJ570EP-T1_GE3
Vishay Siliconix

SQJ570EP-T1_GE3

BAGIAN SAHAM: 165202

Tipe FET: N and P-Channel, Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 100V, Arus - Pembuangan Kontinu (Id) @ 25°C: 15A (Tc), 9.5A (Tc), Rds Aktif (Maks) @ Id, Vgs: 45 mOhm @ 6A, 10V, 146 mOhm @ 6A, 10V, Vgs(th) (Maks) @ Id: 2.5V @ 250µA,

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SI5902BDC-T1-GE3
Vishay Siliconix

SI5902BDC-T1-GE3

BAGIAN SAHAM: 125173

Tipe FET: 2 N-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 30V, Arus - Pembuangan Kontinu (Id) @ 25°C: 4A, Rds Aktif (Maks) @ Id, Vgs: 65 mOhm @ 3.1A, 10V, Vgs(th) (Maks) @ Id: 3V @ 250µA,

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SQ1539EH-T1_GE3
Vishay Siliconix

SQ1539EH-T1_GE3

BAGIAN SAHAM: 2491

Tipe FET: N and P-Channel, Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 30V, Arus - Pembuangan Kontinu (Id) @ 25°C: 850mA (Tc), Rds Aktif (Maks) @ Id, Vgs: 280 mOhm @ 1A, 10V, 940 mOhm @ 500mA, 10V, Vgs(th) (Maks) @ Id: 2.6V @ 250µA,

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SIA929DJ-T1-GE3
Vishay Siliconix

SIA929DJ-T1-GE3

BAGIAN SAHAM: 141982

Tipe FET: 2 P-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 30V, Arus - Pembuangan Kontinu (Id) @ 25°C: 4.5A (Tc), Rds Aktif (Maks) @ Id, Vgs: 64 mOhm @ 3A, 10V, Vgs(th) (Maks) @ Id: 1.1V @ 250µA,

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SQJB60EP-T1_GE3
Vishay Siliconix

SQJB60EP-T1_GE3

BAGIAN SAHAM: 152496

Tipe FET: 2 N-Channel (Dual), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 60V, Arus - Pembuangan Kontinu (Id) @ 25°C: 30A (Tc), Rds Aktif (Maks) @ Id, Vgs: 12 mOhm @ 10A, 10V, Vgs(th) (Maks) @ Id: 2.5V @ 250µA,

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SI4501BDY-T1-GE3
Vishay Siliconix

SI4501BDY-T1-GE3

BAGIAN SAHAM: 198146

Tipe FET: N and P-Channel, Common Drain, Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 30V, 8V, Arus - Pembuangan Kontinu (Id) @ 25°C: 12A, 8A, Rds Aktif (Maks) @ Id, Vgs: 17 mOhm @ 10A, 10V, Vgs(th) (Maks) @ Id: 2V @ 250µA,

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SIA910EDJ-T1-GE3
Vishay Siliconix

SIA910EDJ-T1-GE3

BAGIAN SAHAM: 151991

Tipe FET: 2 N-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 12V, Arus - Pembuangan Kontinu (Id) @ 25°C: 4.5A, Rds Aktif (Maks) @ Id, Vgs: 28 mOhm @ 5.2A, 4.5V, Vgs(th) (Maks) @ Id: 1V @ 250µA,

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SIA923EDJ-T1-GE3
Vishay Siliconix

SIA923EDJ-T1-GE3

BAGIAN SAHAM: 115135

Tipe FET: 2 P-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 20V, Arus - Pembuangan Kontinu (Id) @ 25°C: 4.5A, Rds Aktif (Maks) @ Id, Vgs: 54 mOhm @ 3.8A, 4.5V, Vgs(th) (Maks) @ Id: 1.4V @ 250µA,

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SI5935CDC-T1-E3
Vishay Siliconix

SI5935CDC-T1-E3

BAGIAN SAHAM: 110303

Tipe FET: 2 P-Channel (Dual), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 20V, Arus - Pembuangan Kontinu (Id) @ 25°C: 4A, Rds Aktif (Maks) @ Id, Vgs: 100 mOhm @ 3.1A, 4.5V, Vgs(th) (Maks) @ Id: 1V @ 250µA,

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SI3900DV-T1-E3
Vishay Siliconix

SI3900DV-T1-E3

BAGIAN SAHAM: 118197

Tipe FET: 2 N-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 20V, Arus - Pembuangan Kontinu (Id) @ 25°C: 2A, Rds Aktif (Maks) @ Id, Vgs: 125 mOhm @ 2.4A, 4.5V, Vgs(th) (Maks) @ Id: 1.5V @ 250µA,

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SQ4961EY-T1_GE3
Vishay Siliconix

SQ4961EY-T1_GE3

BAGIAN SAHAM: 110087

Tipe FET: 2 P-Channel (Dual), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 60V, Arus - Pembuangan Kontinu (Id) @ 25°C: 4.4A (Tc), Rds Aktif (Maks) @ Id, Vgs: 85 mOhm @ 3.5A, 10V, Vgs(th) (Maks) @ Id: 2.5V @ 250µA,

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SQJ204EP-T1_GE3
Vishay Siliconix

SQJ204EP-T1_GE3

BAGIAN SAHAM: 2534

Tipe FET: 2 N-Channel (Dual) Asymmetrical, Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 12V, Arus - Pembuangan Kontinu (Id) @ 25°C: 20A (Tc), 60A (Tc), Rds Aktif (Maks) @ Id, Vgs: 8.3 mOhm @ 4A, 10V, 3 mOhm @ 10A, 10V, Vgs(th) (Maks) @ Id: 1.5V @ 250µA,

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SI4948BEY-T1-E3
Vishay Siliconix

SI4948BEY-T1-E3

BAGIAN SAHAM: 125210

Tipe FET: 2 P-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 60V, Arus - Pembuangan Kontinu (Id) @ 25°C: 2.4A, Rds Aktif (Maks) @ Id, Vgs: 120 mOhm @ 3.1A, 10V, Vgs(th) (Maks) @ Id: 3V @ 250µA,

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SQJ952EP-T1_GE3
Vishay Siliconix

SQJ952EP-T1_GE3

BAGIAN SAHAM: 158569

Tipe FET: 2 N-Channel (Dual), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 60V, Arus - Pembuangan Kontinu (Id) @ 25°C: 23A (Tc), Rds Aktif (Maks) @ Id, Vgs: 20 mOhm @ 10.3A, 10V, Vgs(th) (Maks) @ Id: 2.5V @ 250µA,

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SI4599DY-T1-GE3
Vishay Siliconix

SI4599DY-T1-GE3

BAGIAN SAHAM: 199648

Tipe FET: N and P-Channel, Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 40V, Arus - Pembuangan Kontinu (Id) @ 25°C: 6.8A, 5.8A, Rds Aktif (Maks) @ Id, Vgs: 35.5 mOhm @ 5A, 10V, Vgs(th) (Maks) @ Id: 3V @ 250µA,

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SI7236DP-T1-GE3
Vishay Siliconix

SI7236DP-T1-GE3

BAGIAN SAHAM: 45582

Tipe FET: 2 N-Channel (Dual), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 20V, Arus - Pembuangan Kontinu (Id) @ 25°C: 60A, Rds Aktif (Maks) @ Id, Vgs: 5.2 mOhm @ 20.7A, 4.5V, Vgs(th) (Maks) @ Id: 1.5V @ 250µA,

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