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Dioda - Penyearah - Array

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  • Dioda - Penyearah - Array
FEPB16CTHE3/45
Vishay Semiconductor Diodes Division

FEPB16CTHE3/45

BAGIAN SAHAM: 90010

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 150V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 8A, Tegangan - Maju (Vf) (Maks) @ If: 950mV @ 8A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GIB2404HE3/45
Vishay Semiconductor Diodes Division

GIB2404HE3/45

BAGIAN SAHAM: 87487

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 16A, Tegangan - Maju (Vf) (Maks) @ If: 975mV @ 8A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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FEPB16GTHE3/81
Vishay Semiconductor Diodes Division

FEPB16GTHE3/81

BAGIAN SAHAM: 68781

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 8A, Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 8A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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FEPF16GT-E3/45
Vishay Semiconductor Diodes Division

FEPF16GT-E3/45

BAGIAN SAHAM: 87524

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 8A, Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 8A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GI2402-E3/45
Vishay Semiconductor Diodes Division

GI2402-E3/45

BAGIAN SAHAM: 93768

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 16A, Tegangan - Maju (Vf) (Maks) @ If: 975mV @ 8A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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FEPB16AT-E3/81
Vishay Semiconductor Diodes Division

FEPB16AT-E3/81

BAGIAN SAHAM: 75310

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 50V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 8A, Tegangan - Maju (Vf) (Maks) @ If: 950mV @ 8A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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UGB10BCTHE3/81
Vishay Semiconductor Diodes Division

UGB10BCTHE3/81

BAGIAN SAHAM: 91848

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 5A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 5A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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VS-10CVH02-M3/I
Vishay Semiconductor Diodes Division

VS-10CVH02-M3/I

BAGIAN SAHAM: 3424

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 5A, Tegangan - Maju (Vf) (Maks) @ If: 1.17V @ 10A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GIB2404-E3/81
Vishay Semiconductor Diodes Division

GIB2404-E3/81

BAGIAN SAHAM: 75334

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 16A, Tegangan - Maju (Vf) (Maks) @ If: 975mV @ 8A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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UGF10FCTHE3/45
Vishay Semiconductor Diodes Division

UGF10FCTHE3/45

BAGIAN SAHAM: 100678

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 300V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 5A, Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 5A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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UGF10GCT-E3/45
Vishay Semiconductor Diodes Division

UGF10GCT-E3/45

BAGIAN SAHAM: 104940

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 5A, Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 5A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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UGB10DCTHE3/81
Vishay Semiconductor Diodes Division

UGB10DCTHE3/81

BAGIAN SAHAM: 91861

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 5A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 5A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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FEP16FT-E3/45
Vishay Semiconductor Diodes Division

FEP16FT-E3/45

BAGIAN SAHAM: 47314

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 300V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 16A, Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 8A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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FEP16BT-E3/45
Vishay Semiconductor Diodes Division

FEP16BT-E3/45

BAGIAN SAHAM: 136770

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 16A, Tegangan - Maju (Vf) (Maks) @ If: 950mV @ 8A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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FEPF16CT-E3/45
Vishay Semiconductor Diodes Division

FEPF16CT-E3/45

BAGIAN SAHAM: 86805

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 150V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 8A, Tegangan - Maju (Vf) (Maks) @ If: 950mV @ 8A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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UGF10BCTHE3/45
Vishay Semiconductor Diodes Division

UGF10BCTHE3/45

BAGIAN SAHAM: 122391

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 5A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 5A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GSD2004A-E3-08
Vishay Semiconductor Diodes Division

GSD2004A-E3-08

BAGIAN SAHAM: 113335

Konfigurasi Dioda: 1 Pair Common Anode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 240V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 225mA, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 100mA, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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UGB10CCTHE3/45
Vishay Semiconductor Diodes Division

UGB10CCTHE3/45

BAGIAN SAHAM: 116281

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 150V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 5A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 5A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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UGB10FCT-E3/81
Vishay Semiconductor Diodes Division

UGB10FCT-E3/81

BAGIAN SAHAM: 87382

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 300V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 5A, Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 5A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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UGB18CCT-E3/81
Vishay Semiconductor Diodes Division

UGB18CCT-E3/81

BAGIAN SAHAM: 78615

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 150V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 18A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 9A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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VS-30CDU06-M3/I
Vishay Semiconductor Diodes Division

VS-30CDU06-M3/I

BAGIAN SAHAM: 80813

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 15A, Tegangan - Maju (Vf) (Maks) @ If: 1.25V @ 15A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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FEPB16DTHE3/45
Vishay Semiconductor Diodes Division

FEPB16DTHE3/45

BAGIAN SAHAM: 89991

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 8A, Tegangan - Maju (Vf) (Maks) @ If: 950mV @ 8A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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FEP16GT-E3/45
Vishay Semiconductor Diodes Division

FEP16GT-E3/45

BAGIAN SAHAM: 61086

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 16A, Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 8A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GIB2403HE3/81
Vishay Semiconductor Diodes Division

GIB2403HE3/81

BAGIAN SAHAM: 72534

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 150V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 16A, Tegangan - Maju (Vf) (Maks) @ If: 975mV @ 8A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GSD2004C-E3-08
Vishay Semiconductor Diodes Division

GSD2004C-E3-08

BAGIAN SAHAM: 103504

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 240V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 225mA, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 100mA, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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UGF18BCT-E3/45
Vishay Semiconductor Diodes Division

UGF18BCT-E3/45

BAGIAN SAHAM: 100246

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 18A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 9A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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VS-16CDU06-M3/I
Vishay Semiconductor Diodes Division

VS-16CDU06-M3/I

BAGIAN SAHAM: 127752

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 8A, Tegangan - Maju (Vf) (Maks) @ If: 1.4V @ 8A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GIB2401-E3/81
Vishay Semiconductor Diodes Division

GIB2401-E3/81

BAGIAN SAHAM: 75369

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 50V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 16A, Tegangan - Maju (Vf) (Maks) @ If: 975mV @ 8A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GSD2004S-HE3-08
Vishay Semiconductor Diodes Division

GSD2004S-HE3-08

BAGIAN SAHAM: 140718

Konfigurasi Dioda: 1 Pair Series Connection, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 240V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 225mA, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 100mA, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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MMBD7000-G3-08
Vishay Semiconductor Diodes Division

MMBD7000-G3-08

BAGIAN SAHAM: 126070

Konfigurasi Dioda: 1 Pair Series Connection, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 200mA (DC), Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 100mA, Kecepatan: Small Signal =< 200mA (Io), Any Speed,

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FEPB16HTHE3/81
Vishay Semiconductor Diodes Division

FEPB16HTHE3/81

BAGIAN SAHAM: 68723

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 500V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 8A, Tegangan - Maju (Vf) (Maks) @ If: 1.5V @ 8A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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FEPF16ATHE3/45
Vishay Semiconductor Diodes Division

FEPF16ATHE3/45

BAGIAN SAHAM: 83728

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 50V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 8A, Tegangan - Maju (Vf) (Maks) @ If: 950mV @ 8A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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UGF18BCTHE3/45
Vishay Semiconductor Diodes Division

UGF18BCTHE3/45

BAGIAN SAHAM: 96893

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 18A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 9A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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SS8P6C-M3/86A
Vishay Semiconductor Diodes Division

SS8P6C-M3/86A

BAGIAN SAHAM: 196004

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 60V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 4A, Tegangan - Maju (Vf) (Maks) @ If: 700mV @ 4A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GSD2004A-HE3-18
Vishay Semiconductor Diodes Division

GSD2004A-HE3-18

BAGIAN SAHAM: 170818

Konfigurasi Dioda: 1 Pair Common Anode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 240V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 225mA, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 100mA, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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UG18ACT-E3/45
Vishay Semiconductor Diodes Division

UG18ACT-E3/45

BAGIAN SAHAM: 97928

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 50V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 18A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 9A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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