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Dioda - Penyearah - Array

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  • Dioda - Penyearah - Array
UGB10GCTHE3/45
Vishay Semiconductor Diodes Division

UGB10GCTHE3/45

BAGIAN SAHAM: 107532

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 5A, Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 5A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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FEPB16ATHE3/45
Vishay Semiconductor Diodes Division

FEPB16ATHE3/45

BAGIAN SAHAM: 90046

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 50V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 8A, Tegangan - Maju (Vf) (Maks) @ If: 950mV @ 8A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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UG18CCT-E3/45
Vishay Semiconductor Diodes Division

UG18CCT-E3/45

BAGIAN SAHAM: 97942

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 150V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 18A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 9A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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UG10GCT-E3/45
Vishay Semiconductor Diodes Division

UG10GCT-E3/45

BAGIAN SAHAM: 143721

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 5A, Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 5A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GSD2004C-E3-18
Vishay Semiconductor Diodes Division

GSD2004C-E3-18

BAGIAN SAHAM: 141499

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 240V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 225mA, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 100mA, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GSD2004S-E3-18
Vishay Semiconductor Diodes Division

GSD2004S-E3-18

BAGIAN SAHAM: 111184

Konfigurasi Dioda: 1 Pair Series Connection, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 240V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 225mA, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 100mA, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GSD2004S-HE3-18
Vishay Semiconductor Diodes Division

GSD2004S-HE3-18

BAGIAN SAHAM: 198916

Konfigurasi Dioda: 1 Pair Series Connection, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 240V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 225mA, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 100mA, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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FEPF16HT-E3/45
Vishay Semiconductor Diodes Division

FEPF16HT-E3/45

BAGIAN SAHAM: 87593

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 500V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 8A, Tegangan - Maju (Vf) (Maks) @ If: 1.5V @ 8A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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UGB18ACTHE3/45
Vishay Semiconductor Diodes Division

UGB18ACTHE3/45

BAGIAN SAHAM: 90754

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 50V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 18A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 9A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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UGB10BCT-E3/45
Vishay Semiconductor Diodes Division

UGB10BCT-E3/45

BAGIAN SAHAM: 126140

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 5A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 5A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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UGB18DCT-E3/81
Vishay Semiconductor Diodes Division

UGB18DCT-E3/81

BAGIAN SAHAM: 78616

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 18A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 9A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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FEPB16FT-E3/45
Vishay Semiconductor Diodes Division

FEPB16FT-E3/45

BAGIAN SAHAM: 84428

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 300V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 8A, Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 8A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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FEPF16BTHE3/45
Vishay Semiconductor Diodes Division

FEPF16BTHE3/45

BAGIAN SAHAM: 83672

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 8A, Tegangan - Maju (Vf) (Maks) @ If: 950mV @ 8A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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UGB10CCT-E3/81
Vishay Semiconductor Diodes Division

UGB10CCT-E3/81

BAGIAN SAHAM: 99554

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 150V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 5A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 5A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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FEPF16HTHE3/45
Vishay Semiconductor Diodes Division

FEPF16HTHE3/45

BAGIAN SAHAM: 83658

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 500V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 8A, Tegangan - Maju (Vf) (Maks) @ If: 1.5V @ 8A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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FEPB16JT-E3/45
Vishay Semiconductor Diodes Division

FEPB16JT-E3/45

BAGIAN SAHAM: 130498

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 8A, Tegangan - Maju (Vf) (Maks) @ If: 1.5V @ 8A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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FEPB16BTHE3/45
Vishay Semiconductor Diodes Division

FEPB16BTHE3/45

BAGIAN SAHAM: 89969

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 8A, Tegangan - Maju (Vf) (Maks) @ If: 950mV @ 8A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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FEPB16GT-E3/45
Vishay Semiconductor Diodes Division

FEPB16GT-E3/45

BAGIAN SAHAM: 84414

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 8A, Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 8A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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UGF10DCTHE3/45
Vishay Semiconductor Diodes Division

UGF10DCTHE3/45

BAGIAN SAHAM: 116321

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 5A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 5A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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FEP30BP-E3/45
Vishay Semiconductor Diodes Division

FEP30BP-E3/45

BAGIAN SAHAM: 58565

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 15A, Tegangan - Maju (Vf) (Maks) @ If: 950mV @ 15A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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UGF18DCT-E3/45
Vishay Semiconductor Diodes Division

UGF18DCT-E3/45

BAGIAN SAHAM: 100240

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 18A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 9A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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FEP16HT-E3/45
Vishay Semiconductor Diodes Division

FEP16HT-E3/45

BAGIAN SAHAM: 96088

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 500V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 16A, Tegangan - Maju (Vf) (Maks) @ If: 1.5V @ 8A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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UG18DCT-E3/45
Vishay Semiconductor Diodes Division

UG18DCT-E3/45

BAGIAN SAHAM: 97938

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 18A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 9A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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FEPB16JTHE3/81
Vishay Semiconductor Diodes Division

FEPB16JTHE3/81

BAGIAN SAHAM: 68801

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 8A, Tegangan - Maju (Vf) (Maks) @ If: 1.5V @ 8A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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UG10CCT-E3/45
Vishay Semiconductor Diodes Division

UG10CCT-E3/45

BAGIAN SAHAM: 153979

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 150V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 5A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 5A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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UGB10DCTHE3/45
Vishay Semiconductor Diodes Division

UGB10DCTHE3/45

BAGIAN SAHAM: 3388

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 5A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 5A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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UG30BPT-E3/45
Vishay Semiconductor Diodes Division

UG30BPT-E3/45

BAGIAN SAHAM: 34503

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 30A, Tegangan - Maju (Vf) (Maks) @ If: 1.15V @ 30A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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UGB10BCT-E3/81
Vishay Semiconductor Diodes Division

UGB10BCT-E3/81

BAGIAN SAHAM: 99573

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 5A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 5A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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UGF18CCTHE3/45
Vishay Semiconductor Diodes Division

UGF18CCTHE3/45

BAGIAN SAHAM: 96909

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 150V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 18A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 9A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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FEPB16HT-E3/81
Vishay Semiconductor Diodes Division

FEPB16HT-E3/81

BAGIAN SAHAM: 69932

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 500V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 8A, Tegangan - Maju (Vf) (Maks) @ If: 1.5V @ 8A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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FEPF16BT-E3/45
Vishay Semiconductor Diodes Division

FEPF16BT-E3/45

BAGIAN SAHAM: 86860

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 8A, Tegangan - Maju (Vf) (Maks) @ If: 950mV @ 8A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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VS-8CVH02-M3/I
Vishay Semiconductor Diodes Division

VS-8CVH02-M3/I

BAGIAN SAHAM: 4413

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 4A, Tegangan - Maju (Vf) (Maks) @ If: 1.14V @ 8A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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FEPB16AT-E3/45
Vishay Semiconductor Diodes Division

FEPB16AT-E3/45

BAGIAN SAHAM: 90898

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 50V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 8A, Tegangan - Maju (Vf) (Maks) @ If: 950mV @ 8A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GIB2403HE3/45
Vishay Semiconductor Diodes Division

GIB2403HE3/45

BAGIAN SAHAM: 87474

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 150V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 16A, Tegangan - Maju (Vf) (Maks) @ If: 975mV @ 8A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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UGB18ACT-E3/81
Vishay Semiconductor Diodes Division

UGB18ACT-E3/81

BAGIAN SAHAM: 78600

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 50V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 18A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 9A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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FEPB16GTHE3/45
Vishay Semiconductor Diodes Division

FEPB16GTHE3/45

BAGIAN SAHAM: 82984

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 8A, Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 8A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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