Dioda - Penyearah - Tunggal

GKR26/14

BAGIAN SAHAM: 12958

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 1400V, Arus - Rata-Rata Dikoreksi (Io): 25A, Tegangan - Maju (Vf) (Maks) @ If: 1.55V @ 60A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

GKR26/16

BAGIAN SAHAM: 12921

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 1600V, Arus - Rata-Rata Dikoreksi (Io): 25A, Tegangan - Maju (Vf) (Maks) @ If: 1.55V @ 60A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

GKN26/04

BAGIAN SAHAM: 13144

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-Rata Dikoreksi (Io): 25A, Tegangan - Maju (Vf) (Maks) @ If: 1.55V @ 60A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

GKN26/08

BAGIAN SAHAM: 13937

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 800V, Arus - Rata-Rata Dikoreksi (Io): 25A, Tegangan - Maju (Vf) (Maks) @ If: 1.55V @ 60A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

GKN26/16

BAGIAN SAHAM: 12900

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 1600V, Arus - Rata-Rata Dikoreksi (Io): 25A, Tegangan - Maju (Vf) (Maks) @ If: 1.55V @ 60A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

GB02SLT06-214

BAGIAN SAHAM: 1697

GKR26/08

BAGIAN SAHAM: 13917

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 800V, Arus - Rata-Rata Dikoreksi (Io): 25A, Tegangan - Maju (Vf) (Maks) @ If: 1.55V @ 60A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

GB05SLT12-220

BAGIAN SAHAM: 15869

Tipe Dioda: Silicon Carbide Schottky, Tegangan - DC Reverse (Vr) (Maks): 1200V, Arus - Rata-Rata Dikoreksi (Io): 5A, Tegangan - Maju (Vf) (Maks) @ If: 1.8V @ 2A, Kecepatan: No Recovery Time > 500mA (Io), Waktu Pemulihan Terbalik (trr): 0ns,

GKR26/04

BAGIAN SAHAM: 18368

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-Rata Dikoreksi (Io): 25A, Tegangan - Maju (Vf) (Maks) @ If: 1.55V @ 60A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

GKN26/12

BAGIAN SAHAM: 12909

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 1200V, Arus - Rata-Rata Dikoreksi (Io): 25A, Tegangan - Maju (Vf) (Maks) @ If: 1.55V @ 60A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

GKR26/12

BAGIAN SAHAM: 12907

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 1200V, Arus - Rata-Rata Dikoreksi (Io): 25A, Tegangan - Maju (Vf) (Maks) @ If: 1.55V @ 60A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

GB10SLT12-214

BAGIAN SAHAM: 1651

GB10SLT12-220

BAGIAN SAHAM: 7775

Tipe Dioda: Silicon Carbide Schottky, Tegangan - DC Reverse (Vr) (Maks): 1200V, Arus - Rata-Rata Dikoreksi (Io): 10A, Tegangan - Maju (Vf) (Maks) @ If: 1.8V @ 10A, Kecepatan: No Recovery Time > 500mA (Io), Waktu Pemulihan Terbalik (trr): 0ns,

MBRH30030RL

BAGIAN SAHAM: 1344

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 30V, Arus - Rata-Rata Dikoreksi (Io): 300A, Tegangan - Maju (Vf) (Maks) @ If: 580mV @ 300A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

GKN26/14

BAGIAN SAHAM: 12907

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 1400V, Arus - Rata-Rata Dikoreksi (Io): 25A, Tegangan - Maju (Vf) (Maks) @ If: 1.55V @ 60A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

MBRH30020L

BAGIAN SAHAM: 1318

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 20V, Arus - Rata-Rata Dikoreksi (Io): 300A, Tegangan - Maju (Vf) (Maks) @ If: 580mV @ 300A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

MBRH20045L

BAGIAN SAHAM: 1367

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 45V, Arus - Rata-Rata Dikoreksi (Io): 200A, Tegangan - Maju (Vf) (Maks) @ If: 600mV @ 200A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

GAP3SLT33-220FP

BAGIAN SAHAM: 4393

Tipe Dioda: Silicon Carbide Schottky, Tegangan - DC Reverse (Vr) (Maks): 3300V, Arus - Rata-Rata Dikoreksi (Io): 300mA, Tegangan - Maju (Vf) (Maks) @ If: 1.7V @ 300mA, Kecepatan: No Recovery Time > 500mA (Io), Waktu Pemulihan Terbalik (trr): 0ns,

MBRH20030RL

BAGIAN SAHAM: 1318

Tipe Dioda: Schottky, Reverse Polarity, Tegangan - DC Reverse (Vr) (Maks): 30V, Arus - Rata-Rata Dikoreksi (Io): 200A, Tegangan - Maju (Vf) (Maks) @ If: 580mV @ 200A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

GB01SLT12-252

BAGIAN SAHAM: 20729

Tipe Dioda: Silicon Carbide Schottky, Tegangan - DC Reverse (Vr) (Maks): 1200V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.8V @ 1A, Kecepatan: No Recovery Time > 500mA (Io), Waktu Pemulihan Terbalik (trr): 0ns,

MBRH20040L

BAGIAN SAHAM: 5076

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 40V, Arus - Rata-Rata Dikoreksi (Io): 200A, Tegangan - Maju (Vf) (Maks) @ If: 600mV @ 200A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

GB01SLT12-214

BAGIAN SAHAM: 33295

Tipe Dioda: Silicon Carbide Schottky, Tegangan - DC Reverse (Vr) (Maks): 1200V, Arus - Rata-Rata Dikoreksi (Io): 2.5A, Tegangan - Maju (Vf) (Maks) @ If: 1.8V @ 1A, Kecepatan: No Recovery Time > 500mA (Io), Waktu Pemulihan Terbalik (trr): 0ns,

GB02SLT12-252

BAGIAN SAHAM: 37881

Tipe Dioda: Silicon Carbide Schottky, Tegangan - DC Reverse (Vr) (Maks): 1200V, Arus - Rata-Rata Dikoreksi (Io): 5A (DC), Tegangan - Maju (Vf) (Maks) @ If: 1.8V @ 2A, Kecepatan: No Recovery Time > 500mA (Io), Waktu Pemulihan Terbalik (trr): 0ns,

GB05SLT12-252

BAGIAN SAHAM: 17108

Tipe Dioda: Silicon Carbide Schottky, Tegangan - DC Reverse (Vr) (Maks): 1200V, Arus - Rata-Rata Dikoreksi (Io): 5A, Tegangan - Maju (Vf) (Maks) @ If: 1.8V @ 2A, Kecepatan: No Recovery Time > 500mA (Io), Waktu Pemulihan Terbalik (trr): 0ns,

GB10SLT12-252

BAGIAN SAHAM: 9012

Tipe Dioda: Silicon Carbide Schottky, Tegangan - DC Reverse (Vr) (Maks): 1200V, Arus - Rata-Rata Dikoreksi (Io): 10A, Tegangan - Maju (Vf) (Maks) @ If: 2V @ 10A, Kecepatan: No Recovery Time > 500mA (Io), Waktu Pemulihan Terbalik (trr): 0ns,