Dioda - Penyearah - Tunggal | Produk Semikonduktor Diskrit | 21

S400KR

BAGIAN SAHAM: 2009

Tipe Dioda: Standard, Reverse Polarity, Tegangan - DC Reverse (Vr) (Maks): 800V, Arus - Rata-Rata Dikoreksi (Io): 400A, Tegangan - Maju (Vf) (Maks) @ If: 1.2V @ 400A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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GeneSiC Semiconductor

SD4145

BAGIAN SAHAM: 6509

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 45V, Arus - Rata-Rata Dikoreksi (Io): 30A, Tegangan - Maju (Vf) (Maks) @ If: 680mV @ 30A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

FR12M05

BAGIAN SAHAM: 9525

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 1000V, Arus - Rata-Rata Dikoreksi (Io): 12A, Tegangan - Maju (Vf) (Maks) @ If: 800mV @ 12A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 500ns,

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GeneSiC Semiconductor

S85YR

BAGIAN SAHAM: 7151

Tipe Dioda: Standard, Reverse Polarity, Tegangan - DC Reverse (Vr) (Maks): 1600V, Arus - Rata-Rata Dikoreksi (Io): 85A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 85A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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GeneSiC Semiconductor

GB02SLT12-214

BAGIAN SAHAM: 28962

Tipe Dioda: Silicon Carbide Schottky, Tegangan - DC Reverse (Vr) (Maks): 1200V, Arus - Rata-Rata Dikoreksi (Io): 2A (DC), Tegangan - Maju (Vf) (Maks) @ If: 1.8V @ 1A, Kecepatan: No Recovery Time > 500mA (Io), Waktu Pemulihan Terbalik (trr): 0ns,

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GeneSiC Semiconductor

GB01SLT06-214

BAGIAN SAHAM: 37909

Tipe Dioda: Silicon Carbide Schottky, Tegangan - DC Reverse (Vr) (Maks): 650V, Arus - Rata-Rata Dikoreksi (Io): 1A (DC), Tegangan - Maju (Vf) (Maks) @ If: 2V @ 1A, Kecepatan: No Recovery Time > 500mA (Io), Waktu Pemulihan Terbalik (trr): 0ns,

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GeneSiC Semiconductor

GB02SHT01-46

BAGIAN SAHAM: 1555

Tipe Dioda: Silicon Carbide Schottky, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-Rata Dikoreksi (Io): 4A (DC), Tegangan - Maju (Vf) (Maks) @ If: 1.6V @ 1A, Kecepatan: No Recovery Time > 500mA (Io), Waktu Pemulihan Terbalik (trr): 0ns,

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GeneSiC Semiconductor

S40Q

BAGIAN SAHAM: 7175

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 1200V, Arus - Rata-Rata Dikoreksi (Io): 40A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 40A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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GeneSiC Semiconductor

FR85JR02

BAGIAN SAHAM: 5989

Tipe Dioda: Standard, Reverse Polarity, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-Rata Dikoreksi (Io): 85A, Tegangan - Maju (Vf) (Maks) @ If: 1.4V @ 85A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 250ns,

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GeneSiC Semiconductor

FR70G02

BAGIAN SAHAM: 9642

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-Rata Dikoreksi (Io): 70A, Tegangan - Maju (Vf) (Maks) @ If: 1.4V @ 70A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 200ns,

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GeneSiC Semiconductor

GB20SLT12-247

BAGIAN SAHAM: 2856

Tipe Dioda: Silicon Carbide Schottky, Tegangan - DC Reverse (Vr) (Maks): 1200V, Arus - Rata-Rata Dikoreksi (Io): 20A, Tegangan - Maju (Vf) (Maks) @ If: 2V @ 20A, Kecepatan: No Recovery Time > 500mA (Io), Waktu Pemulihan Terbalik (trr): 0ns,

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GeneSiC Semiconductor

S300YR

BAGIAN SAHAM: 1824

Tipe Dioda: Standard, Reverse Polarity, Tegangan - DC Reverse (Vr) (Maks): 1600V, Arus - Rata-Rata Dikoreksi (Io): 300A, Tegangan - Maju (Vf) (Maks) @ If: 1.2V @ 300A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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GeneSiC Semiconductor

S40B

BAGIAN SAHAM: 11196

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-Rata Dikoreksi (Io): 40A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 40A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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GeneSiC Semiconductor

GB02SLT12-220

BAGIAN SAHAM: 17999

Tipe Dioda: Silicon Carbide Schottky, Tegangan - DC Reverse (Vr) (Maks): 1200V, Arus - Rata-Rata Dikoreksi (Io): 2A, Tegangan - Maju (Vf) (Maks) @ If: 1.8V @ 2A, Kecepatan: No Recovery Time > 500mA (Io), Waktu Pemulihan Terbalik (trr): 0ns,

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GeneSiC Semiconductor

MBR8045R

BAGIAN SAHAM: 4212

Tipe Dioda: Schottky, Reverse Polarity, Tegangan - DC Reverse (Vr) (Maks): 45V, Arus - Rata-Rata Dikoreksi (Io): 80A, Tegangan - Maju (Vf) (Maks) @ If: 650mV @ 80A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

FR30J02

BAGIAN SAHAM: 7131

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-Rata Dikoreksi (Io): 30A, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 30A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 200ns,

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GeneSiC Semiconductor

MBRH20045

BAGIAN SAHAM: 2177

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 45V, Arus - Rata-Rata Dikoreksi (Io): 200A, Tegangan - Maju (Vf) (Maks) @ If: 650mV @ 200A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

S85VR

BAGIAN SAHAM: 7084

Tipe Dioda: Standard, Reverse Polarity, Tegangan - DC Reverse (Vr) (Maks): 1400V, Arus - Rata-Rata Dikoreksi (Io): 85A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 85A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBR3560R

BAGIAN SAHAM: 4392

Tipe Dioda: Schottky, Reverse Polarity, Tegangan - DC Reverse (Vr) (Maks): 60V, Arus - Rata-Rata Dikoreksi (Io): 35A, Tegangan - Maju (Vf) (Maks) @ If: 750mV @ 35A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

FR85JR05

BAGIAN SAHAM: 5997

Tipe Dioda: Standard, Reverse Polarity, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-Rata Dikoreksi (Io): 85A, Tegangan - Maju (Vf) (Maks) @ If: 1.4V @ 85A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 500ns,

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GeneSiC Semiconductor

S85Q

BAGIAN SAHAM: 7124

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 1200V, Arus - Rata-Rata Dikoreksi (Io): 85A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 85A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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GeneSiC Semiconductor

S40KR

BAGIAN SAHAM: 8348

Tipe Dioda: Standard, Reverse Polarity, Tegangan - DC Reverse (Vr) (Maks): 800V, Arus - Rata-Rata Dikoreksi (Io): 40A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 40A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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GeneSiC Semiconductor

FR40G02

BAGIAN SAHAM: 7130

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-Rata Dikoreksi (Io): 40A, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 40A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 200ns,

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GeneSiC Semiconductor

MBRH12040R

BAGIAN SAHAM: 2457

Tipe Dioda: Schottky, Reverse Polarity, Tegangan - DC Reverse (Vr) (Maks): 40V, Arus - Rata-Rata Dikoreksi (Io): 120A, Tegangan - Maju (Vf) (Maks) @ If: 700mV @ 120A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

GB02SHT03-46

BAGIAN SAHAM: 1505

Tipe Dioda: Silicon Carbide Schottky, Tegangan - DC Reverse (Vr) (Maks): 300V, Arus - Rata-Rata Dikoreksi (Io): 4A (DC), Tegangan - Maju (Vf) (Maks) @ If: 1.6V @ 1A, Kecepatan: No Recovery Time > 500mA (Io), Waktu Pemulihan Terbalik (trr): 0ns,

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GeneSiC Semiconductor

MBRH20045R

BAGIAN SAHAM: 2179

Tipe Dioda: Schottky, Reverse Polarity, Tegangan - DC Reverse (Vr) (Maks): 45V, Arus - Rata-Rata Dikoreksi (Io): 200A, Tegangan - Maju (Vf) (Maks) @ If: 700mV @ 200A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

GB50SLT12-247

BAGIAN SAHAM: 771

Tipe Dioda: Silicon Carbide Schottky, Tegangan - DC Reverse (Vr) (Maks): 1200V, Arus - Rata-Rata Dikoreksi (Io): 50A, Tegangan - Maju (Vf) (Maks) @ If: 1.8V @ 50A, Kecepatan: No Recovery Time > 500mA (Io), Waktu Pemulihan Terbalik (trr): 0ns,

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GeneSiC Semiconductor

FR40KR05

BAGIAN SAHAM: 7134

Tipe Dioda: Standard, Reverse Polarity, Tegangan - DC Reverse (Vr) (Maks): 800V, Arus - Rata-Rata Dikoreksi (Io): 40A, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 40A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 500ns,

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GeneSiC Semiconductor

FR20GR02

BAGIAN SAHAM: 7177

Tipe Dioda: Standard, Reverse Polarity, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-Rata Dikoreksi (Io): 20A, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 20A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 200ns,

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GeneSiC Semiconductor

GB02SHT06-46

BAGIAN SAHAM: 1373

Tipe Dioda: Silicon Carbide Schottky, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-Rata Dikoreksi (Io): 4A (DC), Tegangan - Maju (Vf) (Maks) @ If: 1.6V @ 1A, Kecepatan: No Recovery Time > 500mA (Io), Waktu Pemulihan Terbalik (trr): 0ns,

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GeneSiC Semiconductor

FR70GR02

BAGIAN SAHAM: 7175

Tipe Dioda: Standard, Reverse Polarity, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-Rata Dikoreksi (Io): 70A, Tegangan - Maju (Vf) (Maks) @ If: 1.4V @ 70A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 200ns,

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GeneSiC Semiconductor

FR30G02

BAGIAN SAHAM: 7099

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-Rata Dikoreksi (Io): 30A, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 30A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 200ns,

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GeneSiC Semiconductor

S85JR

BAGIAN SAHAM: 7155

Tipe Dioda: Standard, Reverse Polarity, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-Rata Dikoreksi (Io): 85A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 85A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBR3545

BAGIAN SAHAM: 4428

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 45V, Arus - Rata-Rata Dikoreksi (Io): 35A, Tegangan - Maju (Vf) (Maks) @ If: 680mV @ 35A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

S300Y

BAGIAN SAHAM: 1833

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 1600V, Arus - Rata-Rata Dikoreksi (Io): 300A, Tegangan - Maju (Vf) (Maks) @ If: 1.2V @ 300A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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GeneSiC Semiconductor

S85J

BAGIAN SAHAM: 7670

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-Rata Dikoreksi (Io): 85A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 85A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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