Dioda - Penyearah - Tunggal | Produk Semikonduktor Diskrit | 21

MBR8045

BAGIAN SAHAM: 4200

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 45V, Arus - Rata-Rata Dikoreksi (Io): 80A, Tegangan - Maju (Vf) (Maks) @ If: 650mV @ 80A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRH30020RL

BAGIAN SAHAM: 2354

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 20V, Arus - Rata-Rata Dikoreksi (Io): 300A, Tegangan - Maju (Vf) (Maks) @ If: 580mV @ 300A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

FR30GR02

BAGIAN SAHAM: 7100

Tipe Dioda: Standard, Reverse Polarity, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-Rata Dikoreksi (Io): 30A, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 30A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 200ns,

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GeneSiC Semiconductor

MBRH30040RL

BAGIAN SAHAM: 2289

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 40V, Arus - Rata-Rata Dikoreksi (Io): 300A, Tegangan - Maju (Vf) (Maks) @ If: 600mV @ 300A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRH30045L

BAGIAN SAHAM: 2377

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 45V, Arus - Rata-Rata Dikoreksi (Io): 300A, Tegangan - Maju (Vf) (Maks) @ If: 600mV @ 300A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MUR5010R

BAGIAN SAHAM: 5676

Tipe Dioda: Standard, Reverse Polarity, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-Rata Dikoreksi (Io): 50A, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 50A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 75ns,

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GeneSiC Semiconductor

FR85G02

BAGIAN SAHAM: 6031

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-Rata Dikoreksi (Io): 85A, Tegangan - Maju (Vf) (Maks) @ If: 1.4V @ 85A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 200ns,

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GeneSiC Semiconductor

FR40MR05

BAGIAN SAHAM: 7147

Tipe Dioda: Standard, Reverse Polarity, Tegangan - DC Reverse (Vr) (Maks): 1000V, Arus - Rata-Rata Dikoreksi (Io): 40A, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 40A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 500ns,

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GeneSiC Semiconductor

FR85GR02

BAGIAN SAHAM: 6017

Tipe Dioda: Standard, Reverse Polarity, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-Rata Dikoreksi (Io): 85A, Tegangan - Maju (Vf) (Maks) @ If: 1.4V @ 85A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 200ns,

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GeneSiC Semiconductor

MBRH30030L

BAGIAN SAHAM: 2356

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 30V, Arus - Rata-Rata Dikoreksi (Io): 300A, Tegangan - Maju (Vf) (Maks) @ If: 580mV @ 300A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MURH7060R

BAGIAN SAHAM: 2350

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-Rata Dikoreksi (Io): 70A, Tegangan - Maju (Vf) (Maks) @ If: 1.7V @ 70A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 110ns,

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GeneSiC Semiconductor

MBRH30045RL

BAGIAN SAHAM: 2334

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 45V, Arus - Rata-Rata Dikoreksi (Io): 300A, Tegangan - Maju (Vf) (Maks) @ If: 600mV @ 300A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRH30040L

BAGIAN SAHAM: 2296

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 40V, Arus - Rata-Rata Dikoreksi (Io): 300A, Tegangan - Maju (Vf) (Maks) @ If: 600mV @ 300A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRH30035L

BAGIAN SAHAM: 2318

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 35V, Arus - Rata-Rata Dikoreksi (Io): 300A, Tegangan - Maju (Vf) (Maks) @ If: 600mV @ 300A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRH30035RL

BAGIAN SAHAM: 5231

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 35V, Arus - Rata-Rata Dikoreksi (Io): 300A, Tegangan - Maju (Vf) (Maks) @ If: 600mV @ 300A,

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GeneSiC Semiconductor

MBRH20035L

BAGIAN SAHAM: 2307

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 35V, Arus - Rata-Rata Dikoreksi (Io): 200A, Tegangan - Maju (Vf) (Maks) @ If: 600mV @ 200A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRH20045RL

BAGIAN SAHAM: 2242

Tipe Dioda: Schottky, Reverse Polarity, Tegangan - DC Reverse (Vr) (Maks): 45V, Arus - Rata-Rata Dikoreksi (Io): 200A, Tegangan - Maju (Vf) (Maks) @ If: 600mV @ 200A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRH15020RL

BAGIAN SAHAM: 2232

Tipe Dioda: Schottky, Reverse Polarity, Tegangan - DC Reverse (Vr) (Maks): 20V, Arus - Rata-Rata Dikoreksi (Io): 150A, Tegangan - Maju (Vf) (Maks) @ If: 580mV @ 150A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

GAP05SLT80-220

BAGIAN SAHAM: 311

Tipe Dioda: Silicon Carbide Schottky, Tegangan - DC Reverse (Vr) (Maks): 8000V, Arus - Rata-Rata Dikoreksi (Io): 50mA (DC), Tegangan - Maju (Vf) (Maks) @ If: 4.6V @ 50mA, Kecepatan: No Recovery Time > 500mA (Io), Waktu Pemulihan Terbalik (trr): 0ns,

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GeneSiC Semiconductor

MBRH20020RL

BAGIAN SAHAM: 2319

Tipe Dioda: Schottky, Reverse Polarity, Tegangan - DC Reverse (Vr) (Maks): 20V, Arus - Rata-Rata Dikoreksi (Io): 200A, Tegangan - Maju (Vf) (Maks) @ If: 580mV @ 200mA, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRH15045RL

BAGIAN SAHAM: 2265

Tipe Dioda: Schottky, Reverse Polarity, Tegangan - DC Reverse (Vr) (Maks): 45V, Arus - Rata-Rata Dikoreksi (Io): 150A, Tegangan - Maju (Vf) (Maks) @ If: 600mV @ 150A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRH15030L

BAGIAN SAHAM: 2239

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 30V, Arus - Rata-Rata Dikoreksi (Io): 150A, Tegangan - Maju (Vf) (Maks) @ If: 580mV @ 150A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRH20020L

BAGIAN SAHAM: 2328

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 20V, Arus - Rata-Rata Dikoreksi (Io): 200A, Tegangan - Maju (Vf) (Maks) @ If: 580mV @ 200mA, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRH15040L

BAGIAN SAHAM: 2310

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 40V, Arus - Rata-Rata Dikoreksi (Io): 150A, Tegangan - Maju (Vf) (Maks) @ If: 600mV @ 150A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRH15035L

BAGIAN SAHAM: 2284

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 35V, Arus - Rata-Rata Dikoreksi (Io): 150A, Tegangan - Maju (Vf) (Maks) @ If: 600mV @ 150A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRH20030L

BAGIAN SAHAM: 2270

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 30V, Arus - Rata-Rata Dikoreksi (Io): 200A, Tegangan - Maju (Vf) (Maks) @ If: 580mV @ 200A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRH20040RL

BAGIAN SAHAM: 2239

Tipe Dioda: Schottky, Reverse Polarity, Tegangan - DC Reverse (Vr) (Maks): 40V, Arus - Rata-Rata Dikoreksi (Io): 200A, Tegangan - Maju (Vf) (Maks) @ If: 600mV @ 200A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRH20035RL

BAGIAN SAHAM: 5225

Tipe Dioda: Schottky, Reverse Polarity, Tegangan - DC Reverse (Vr) (Maks): 35V, Arus - Rata-Rata Dikoreksi (Io): 200A, Tegangan - Maju (Vf) (Maks) @ If: 600mV @ 200A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRH15040RL

BAGIAN SAHAM: 2278

Tipe Dioda: Schottky, Reverse Polarity, Tegangan - DC Reverse (Vr) (Maks): 40V, Arus - Rata-Rata Dikoreksi (Io): 150A, Tegangan - Maju (Vf) (Maks) @ If: 600mV @ 150A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRH15035RL

BAGIAN SAHAM: 2301

Tipe Dioda: Schottky, Reverse Polarity, Tegangan - DC Reverse (Vr) (Maks): 35V, Arus - Rata-Rata Dikoreksi (Io): 150A, Tegangan - Maju (Vf) (Maks) @ If: 600mV @ 150A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRH15020L

BAGIAN SAHAM: 2249

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 20V, Arus - Rata-Rata Dikoreksi (Io): 150A, Tegangan - Maju (Vf) (Maks) @ If: 580mV @ 150A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRH15030RL

BAGIAN SAHAM: 2239

Tipe Dioda: Schottky, Reverse Polarity, Tegangan - DC Reverse (Vr) (Maks): 30V, Arus - Rata-Rata Dikoreksi (Io): 150A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRH15045L

BAGIAN SAHAM: 2267

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 45V, Arus - Rata-Rata Dikoreksi (Io): 150A, Tegangan - Maju (Vf) (Maks) @ If: 600mV @ 150A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

FR6A02

BAGIAN SAHAM: 10367

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 50V, Arus - Rata-Rata Dikoreksi (Io): 6A, Tegangan - Maju (Vf) (Maks) @ If: 1.4V @ 6A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 200ns,

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GeneSiC Semiconductor

GB01SLT12-220

BAGIAN SAHAM: 20747

Tipe Dioda: Silicon Carbide Schottky, Tegangan - DC Reverse (Vr) (Maks): 1200V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.8V @ 1A, Kecepatan: No Recovery Time > 500mA (Io), Waktu Pemulihan Terbalik (trr): 0ns,

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GeneSiC Semiconductor

GAP3SLT33-214

BAGIAN SAHAM: 5683

Tipe Dioda: Silicon Carbide Schottky, Tegangan - DC Reverse (Vr) (Maks): 3300V, Arus - Rata-Rata Dikoreksi (Io): 300mA (DC), Tegangan - Maju (Vf) (Maks) @ If: 2.2V @ 300mA, Kecepatan: No Recovery Time > 500mA (Io), Waktu Pemulihan Terbalik (trr): 0ns,

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