Dioda - Penyearah - Tunggal | Produk Semikonduktor Diskrit | 100

SS3H9HE3_B/H

BAGIAN SAHAM: 101

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 90V, Arus - Rata-Rata Dikoreksi (Io): 3A, Tegangan - Maju (Vf) (Maks) @ If: 800mV @ 3A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

VF20100SG-E3/4W

BAGIAN SAHAM: 128813

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-Rata Dikoreksi (Io): 20A, Tegangan - Maju (Vf) (Maks) @ If: 1.07V @ 20A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

RS1PG-M3/85A

BAGIAN SAHAM: 186880

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 150ns,

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Vishay Semiconductor Diodes Division

UG1A-M3/73

BAGIAN SAHAM: 165157

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 50V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 950mV @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 25ns,

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Vishay Semiconductor Diodes Division

UF5403-E3/54

BAGIAN SAHAM: 142009

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 300V, Arus - Rata-Rata Dikoreksi (Io): 3A, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 3A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 50ns,

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Vishay Semiconductor Diodes Division

UG1B-M3/54

BAGIAN SAHAM: 139405

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 950mV @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 25ns,

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Vishay Semiconductor Diodes Division

VS-3EGH06-M3/5BT

BAGIAN SAHAM: 107094

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-Rata Dikoreksi (Io): 3A, Tegangan - Maju (Vf) (Maks) @ If: 1.7V @ 3A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 25ns,

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Vishay Semiconductor Diodes Division

S3DHE3_A/I

BAGIAN SAHAM: 199149

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-Rata Dikoreksi (Io): 3A, Tegangan - Maju (Vf) (Maks) @ If: 1.15V @ 2.5A, Kecepatan: Standard Recovery >500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 2.5µs,

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Vishay Semiconductor Diodes Division

CS3G-E3/H

BAGIAN SAHAM: 120

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-Rata Dikoreksi (Io): 3A, Tegangan - Maju (Vf) (Maks) @ If: 1.2V @ 3A, Kecepatan: Standard Recovery >500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 2.8µs,

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Vishay Semiconductor Diodes Division

V35PWM10-M3/I

BAGIAN SAHAM: 132807

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-Rata Dikoreksi (Io): 35A, Tegangan - Maju (Vf) (Maks) @ If: 900mV @ 35A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

SS2P3LHM3/84A

BAGIAN SAHAM: 124208

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 30V, Arus - Rata-Rata Dikoreksi (Io): 2A, Tegangan - Maju (Vf) (Maks) @ If: 500mV @ 2A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

RS3GHE3_A/H

BAGIAN SAHAM: 164070

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-Rata Dikoreksi (Io): 3A, Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 2.5A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 150ns,

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Vishay Semiconductor Diodes Division

SS1P6LHM3/85A

BAGIAN SAHAM: 140996

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 60V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 590mV @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

SL42-M3/57T

BAGIAN SAHAM: 198338

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 20V, Arus - Rata-Rata Dikoreksi (Io): 4A, Tegangan - Maju (Vf) (Maks) @ If: 420mV @ 4A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

MSS2P3HM3_A/H

BAGIAN SAHAM: 98

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 30V, Arus - Rata-Rata Dikoreksi (Io): 2A, Tegangan - Maju (Vf) (Maks) @ If: 600mV @ 2A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

V35PWM45HM3/I

BAGIAN SAHAM: 123817

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 45V, Arus - Rata-Rata Dikoreksi (Io): 35A, Tegangan - Maju (Vf) (Maks) @ If: 670mV @ 35A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

V20PWM10-M3/I

BAGIAN SAHAM: 187964

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-Rata Dikoreksi (Io): 20A, Tegangan - Maju (Vf) (Maks) @ If: 900mV @ 20A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

RS2K-E3/5BT

BAGIAN SAHAM: 155795

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 800V, Arus - Rata-Rata Dikoreksi (Io): 1.5A, Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 1.5A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 500ns,

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Vishay Semiconductor Diodes Division

VS-400UR80D

BAGIAN SAHAM: 1089

Tipe Dioda: Standard, Reverse Polarity, Tegangan - DC Reverse (Vr) (Maks): 800V, Arus - Rata-Rata Dikoreksi (Io): 400A, Tegangan - Maju (Vf) (Maks) @ If: 1.62V @ 1500A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

SS1P3LHM3/84A

BAGIAN SAHAM: 108132

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 30V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 450mV @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

SS2PH9HM3_A/I

BAGIAN SAHAM: 64

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 29V, Arus - Rata-Rata Dikoreksi (Io): 2A, Tegangan - Maju (Vf) (Maks) @ If: 800mV @ 2A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

CS3K-E3/H

BAGIAN SAHAM: 74

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 800V, Arus - Rata-Rata Dikoreksi (Io): 3A, Tegangan - Maju (Vf) (Maks) @ If: 1.2V @ 3A, Kecepatan: Standard Recovery >500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 2.8µs,

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Vishay Semiconductor Diodes Division

SS2PH6HM3/84A

BAGIAN SAHAM: 147560

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 60V, Arus - Rata-Rata Dikoreksi (Io): 2A, Tegangan - Maju (Vf) (Maks) @ If: 800mV @ 2A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

SS35-E3/9AT

BAGIAN SAHAM: 182728

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 50V, Arus - Rata-Rata Dikoreksi (Io): 3A, Tegangan - Maju (Vf) (Maks) @ If: 750mV @ 3A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

UF4007-M3/73

BAGIAN SAHAM: 147743

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 1000V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.7V @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 75ns,

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Vishay Semiconductor Diodes Division

SB3H90-E3/54

BAGIAN SAHAM: 160528

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 90V, Arus - Rata-Rata Dikoreksi (Io): 3A, Tegangan - Maju (Vf) (Maks) @ If: 800mV @ 3A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

V20150SG-M3/4W

BAGIAN SAHAM: 115113

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 150V, Arus - Rata-Rata Dikoreksi (Io): 20A, Tegangan - Maju (Vf) (Maks) @ If: 1.6V @ 20A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

RS2A-M3/52T

BAGIAN SAHAM: 105110

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 50V, Arus - Rata-Rata Dikoreksi (Io): 1.5A, Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 1.5A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 150ns,

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Vishay Semiconductor Diodes Division

MSS1P2LHM3_A/H

BAGIAN SAHAM: 144

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 20V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 500mV @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

SB1H90-E3/54

BAGIAN SAHAM: 101428

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 90V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 770mV @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

SB120-E3/73

BAGIAN SAHAM: 165455

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 20V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 480mV @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

SS1P4LHM3/85A

BAGIAN SAHAM: 199167

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 40V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 480mV @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

VS-30BQ015HM3/9AT

BAGIAN SAHAM: 199823

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 15V, Arus - Rata-Rata Dikoreksi (Io): 3A, Tegangan - Maju (Vf) (Maks) @ If: 350mV @ 3A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

VF30120SG-M3/4W

BAGIAN SAHAM: 112717

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 120V, Arus - Rata-Rata Dikoreksi (Io): 30A, Tegangan - Maju (Vf) (Maks) @ If: 1.28V @ 30A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

UF1007-M3/73

BAGIAN SAHAM: 108335

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 1000V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.7V @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 75ns,

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Vishay Semiconductor Diodes Division

V30100SG-M3/4W

BAGIAN SAHAM: 109122

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-Rata Dikoreksi (Io): 30A, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 30A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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