Dioda - Zener - Single | Produk Semikonduktor Diskrit | 100

Vishay Semiconductor Diodes Division

BZT52C3V6-G3-18

BAGIAN SAHAM: 192384

Tegangan - Zener (Nom) (Vz): 3.6V, Toleransi: ±5%, Daya - Maks: 410mW, Impedansi (Maks) (Zzt): 80 Ohms,

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Vishay Semiconductor Diodes Division

BZX384B6V2-G3-18

BAGIAN SAHAM: 170009

Tegangan - Zener (Nom) (Vz): 6.2V, Toleransi: ±2%, Daya - Maks: 200mW, Impedansi (Maks) (Zzt): 10 Ohms, Arus - Kebocoran Balik @ Vr: 3µA @ 4V,

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Vishay Semiconductor Diodes Division

BZT52B8V2-G3-18

BAGIAN SAHAM: 123471

Tegangan - Zener (Nom) (Vz): 8.2V, Toleransi: ±2%, Daya - Maks: 410mW, Impedansi (Maks) (Zzt): 4.5 Ohms, Arus - Kebocoran Balik @ Vr: 100nA @ 6V,

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Vishay Semiconductor Diodes Division

BZT52C6V8-G3-08

BAGIAN SAHAM: 113788

Tegangan - Zener (Nom) (Vz): 6.8V, Toleransi: ±5%, Daya - Maks: 410mW, Impedansi (Maks) (Zzt): 4.5 Ohms, Arus - Kebocoran Balik @ Vr: 100nA @ 3V,

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Vishay Semiconductor Diodes Division

BZX384B75-E3-18

BAGIAN SAHAM: 166815

Tegangan - Zener (Nom) (Vz): 75V, Toleransi: ±2%, Daya - Maks: 200mW, Impedansi (Maks) (Zzt): 255 Ohms, Arus - Kebocoran Balik @ Vr: 50nA @ 52.5V,

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Vishay Semiconductor Diodes Division

BZT52C11-HE3-18

BAGIAN SAHAM: 146314

Tegangan - Zener (Nom) (Vz): 11V, Toleransi: ±5%, Daya - Maks: 410mW, Impedansi (Maks) (Zzt): 6 Ohms, Arus - Kebocoran Balik @ Vr: 100nA @ 8.5V,

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Vishay Semiconductor Diodes Division

BZX384C18-HE3-08

BAGIAN SAHAM: 169433

Tegangan - Zener (Nom) (Vz): 18V, Toleransi: ±5%, Daya - Maks: 200mW, Impedansi (Maks) (Zzt): 45 Ohms, Arus - Kebocoran Balik @ Vr: 50nA @ 12.6V,

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Vishay Semiconductor Diodes Division

BZX384B3V0-HE3-18

BAGIAN SAHAM: 194345

Tegangan - Zener (Nom) (Vz): 3V, Toleransi: ±2%, Daya - Maks: 200mW, Impedansi (Maks) (Zzt): 95 Ohms, Arus - Kebocoran Balik @ Vr: 10µA @ 1V,

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Vishay Semiconductor Diodes Division

BZT52B3V3-HE3-08

BAGIAN SAHAM: 106300

Tegangan - Zener (Nom) (Vz): 3.3V, Toleransi: ±2%, Daya - Maks: 410mW, Impedansi (Maks) (Zzt): 80 Ohms,

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Vishay Semiconductor Diodes Division

BZT52B16-E3-08

BAGIAN SAHAM: 145181

Tegangan - Zener (Nom) (Vz): 16V, Toleransi: ±2%, Daya - Maks: 410mW, Impedansi (Maks) (Zzt): 13 Ohms, Arus - Kebocoran Balik @ Vr: 100nA @ 12V,

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Vishay Semiconductor Diodes Division

BZT52C9V1-HE3-08

BAGIAN SAHAM: 100737

Tegangan - Zener (Nom) (Vz): 9.1V, Toleransi: ±5%, Daya - Maks: 410mW, Impedansi (Maks) (Zzt): 4.8 Ohms, Arus - Kebocoran Balik @ Vr: 100nA @ 7V,

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Vishay Semiconductor Diodes Division

BZX384C33-HE3-08

BAGIAN SAHAM: 155475

Tegangan - Zener (Nom) (Vz): 33V, Toleransi: ±5%, Daya - Maks: 200mW, Impedansi (Maks) (Zzt): 80 Ohms, Arus - Kebocoran Balik @ Vr: 50nA @ 23.1V,

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Vishay Semiconductor Diodes Division

BZX384B68-G3-18

BAGIAN SAHAM: 171170

Tegangan - Zener (Nom) (Vz): 68V, Toleransi: ±2%, Daya - Maks: 200mW, Impedansi (Maks) (Zzt): 240 Ohms, Arus - Kebocoran Balik @ Vr: 50nA @ 47.6V,

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Vishay Semiconductor Diodes Division

BZT52C9V1-HE3-18

BAGIAN SAHAM: 189439

Tegangan - Zener (Nom) (Vz): 9.1V, Toleransi: ±5%, Daya - Maks: 410mW, Impedansi (Maks) (Zzt): 4.8 Ohms, Arus - Kebocoran Balik @ Vr: 100nA @ 7V,

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Vishay Semiconductor Diodes Division

BZX384C30-HE3-18

BAGIAN SAHAM: 154141

Tegangan - Zener (Nom) (Vz): 30V, Toleransi: ±5%, Daya - Maks: 200mW, Impedansi (Maks) (Zzt): 80 Ohms, Arus - Kebocoran Balik @ Vr: 50nA @ 21V,

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Vishay Semiconductor Diodes Division

BZX384B11-E3-08

BAGIAN SAHAM: 129727

Tegangan - Zener (Nom) (Vz): 11V, Toleransi: ±2%, Daya - Maks: 200mW, Impedansi (Maks) (Zzt): 20 Ohms, Arus - Kebocoran Balik @ Vr: 100nA @ 8V,

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Vishay Semiconductor Diodes Division

BZX384B33-G3-08

BAGIAN SAHAM: 163488

Tegangan - Zener (Nom) (Vz): 33V, Toleransi: ±2%, Daya - Maks: 200mW, Impedansi (Maks) (Zzt): 80 Ohms, Arus - Kebocoran Balik @ Vr: 50nA @ 23.1V,

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Vishay Semiconductor Diodes Division

BZX384C51-E3-08

BAGIAN SAHAM: 188946

Tegangan - Zener (Nom) (Vz): 51V, Toleransi: ±5%, Daya - Maks: 200mW, Impedansi (Maks) (Zzt): 180 Ohms, Arus - Kebocoran Balik @ Vr: 50nA @ 35.7V,

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Vishay Semiconductor Diodes Division

BZX384C16-E3-18

BAGIAN SAHAM: 164587

Tegangan - Zener (Nom) (Vz): 16V, Toleransi: ±5%, Daya - Maks: 200mW, Impedansi (Maks) (Zzt): 40 Ohms, Arus - Kebocoran Balik @ Vr: 50nA @ 11.2V,

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Vishay Semiconductor Diodes Division

BZX384C22-G3-08

BAGIAN SAHAM: 132363

Tegangan - Zener (Nom) (Vz): 22V, Toleransi: ±5%, Daya - Maks: 200mW, Impedansi (Maks) (Zzt): 55 Ohms, Arus - Kebocoran Balik @ Vr: 50nA @ 15.4V,

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Vishay Semiconductor Diodes Division

BZX384B6V2-HE3-18

BAGIAN SAHAM: 126342

Tegangan - Zener (Nom) (Vz): 6.2V, Toleransi: ±2%, Daya - Maks: 200mW, Impedansi (Maks) (Zzt): 10 Ohms, Arus - Kebocoran Balik @ Vr: 3µA @ 4V,

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Vishay Semiconductor Diodes Division

BZT52B5V1-E3-18

BAGIAN SAHAM: 193733

Tegangan - Zener (Nom) (Vz): 5.1V, Toleransi: ±2%, Daya - Maks: 410mW, Impedansi (Maks) (Zzt): 30 Ohms, Arus - Kebocoran Balik @ Vr: 100nA @ 800mV,

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Vishay Semiconductor Diodes Division

BZX384B75-HE3-08

BAGIAN SAHAM: 125310

Tegangan - Zener (Nom) (Vz): 75V, Toleransi: ±2%, Daya - Maks: 200mW, Impedansi (Maks) (Zzt): 255 Ohms, Arus - Kebocoran Balik @ Vr: 50nA @ 52.5V,

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Vishay Semiconductor Diodes Division

BZT52B6V8-HE3-18

BAGIAN SAHAM: 153311

Tegangan - Zener (Nom) (Vz): 6.8V, Toleransi: ±2%, Daya - Maks: 410mW, Impedansi (Maks) (Zzt): 4.5 Ohms, Arus - Kebocoran Balik @ Vr: 100nA @ 3V,

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Vishay Semiconductor Diodes Division

BZX384C9V1-G3-08

BAGIAN SAHAM: 195453

Tegangan - Zener (Nom) (Vz): 9.1V, Toleransi: ±5%, Daya - Maks: 200mW, Impedansi (Maks) (Zzt): 15 Ohms, Arus - Kebocoran Balik @ Vr: 500nA @ 6V,

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Vishay Semiconductor Diodes Division

BZT52C33-E3-18

BAGIAN SAHAM: 185607

Tegangan - Zener (Nom) (Vz): 33V, Toleransi: ±5%, Daya - Maks: 410mW, Impedansi (Maks) (Zzt): 40 Ohms, Arus - Kebocoran Balik @ Vr: 100nA @ 25V,

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Vishay Semiconductor Diodes Division

BZX384B24-HE3-08

BAGIAN SAHAM: 190960

Tegangan - Zener (Nom) (Vz): 24V, Toleransi: ±2%, Daya - Maks: 200mW, Impedansi (Maks) (Zzt): 70 Ohms, Arus - Kebocoran Balik @ Vr: 50nA @ 16.8V,

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Vishay Semiconductor Diodes Division

BZT52B7V5-G3-08

BAGIAN SAHAM: 155521

Tegangan - Zener (Nom) (Vz): 7.5V, Toleransi: ±2%, Daya - Maks: 410mW, Impedansi (Maks) (Zzt): 4 Ohms, Arus - Kebocoran Balik @ Vr: 100nA @ 5V,

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Vishay Semiconductor Diodes Division

BZX384B75-HE3-18

BAGIAN SAHAM: 120827

Tegangan - Zener (Nom) (Vz): 75V, Toleransi: ±2%, Daya - Maks: 200mW, Impedansi (Maks) (Zzt): 255 Ohms, Arus - Kebocoran Balik @ Vr: 50nA @ 52.5V,

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Vishay Semiconductor Diodes Division

BZX384B3V0-G3-08

BAGIAN SAHAM: 130988

Tegangan - Zener (Nom) (Vz): 3V, Toleransi: ±2%, Daya - Maks: 200mW, Impedansi (Maks) (Zzt): 95 Ohms, Arus - Kebocoran Balik @ Vr: 10µA @ 1V,

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Vishay Semiconductor Diodes Division

BZT52B2V4-G3-08

BAGIAN SAHAM: 124548

Tegangan - Zener (Nom) (Vz): 2.4V, Toleransi: ±2%, Daya - Maks: 410mW, Impedansi (Maks) (Zzt): 85 Ohms,

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Vishay Semiconductor Diodes Division

BZT52C24-E3-18

BAGIAN SAHAM: 187654

Tegangan - Zener (Nom) (Vz): 24V, Toleransi: ±5%, Daya - Maks: 410mW, Impedansi (Maks) (Zzt): 28 Ohms, Arus - Kebocoran Balik @ Vr: 100nA @ 18V,

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Vishay Semiconductor Diodes Division

BZX384B39-E3-08

BAGIAN SAHAM: 149633

Tegangan - Zener (Nom) (Vz): 39V, Toleransi: ±2%, Daya - Maks: 200mW, Impedansi (Maks) (Zzt): 130 Ohms, Arus - Kebocoran Balik @ Vr: 50nA @ 27.3V,

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Vishay Semiconductor Diodes Division

BZX384C68-E3-18

BAGIAN SAHAM: 166113

Tegangan - Zener (Nom) (Vz): 68V, Toleransi: ±5%, Daya - Maks: 200mW, Impedansi (Maks) (Zzt): 240 Ohms, Arus - Kebocoran Balik @ Vr: 50nA @ 47.6V,

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Vishay Semiconductor Diodes Division

BZT52B10-HE3-18

BAGIAN SAHAM: 138683

Tegangan - Zener (Nom) (Vz): 10V, Toleransi: ±2%, Daya - Maks: 410mW, Impedansi (Maks) (Zzt): 5.2 Ohms, Arus - Kebocoran Balik @ Vr: 100nA @ 7.5V,

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Vishay Semiconductor Diodes Division

BZT52C68-HE3-18

BAGIAN SAHAM: 153378

Tegangan - Zener (Nom) (Vz): 68V, Toleransi: ±5%, Daya - Maks: 410mW, Impedansi (Maks) (Zzt): 200 Ohms,

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