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Transistor - FET, MOSFET - Array

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  • Transistor - FET, MOSFET - Array
SI4500BDY-T1-GE3
Vishay Siliconix

SI4500BDY-T1-GE3

BAGIAN SAHAM: 2858

Tipe FET: N and P-Channel, Common Drain, Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 20V, Arus - Pembuangan Kontinu (Id) @ 25°C: 6.6A, 3.8A, Rds Aktif (Maks) @ Id, Vgs: 20 mOhm @ 9.1A, 4.5V, Vgs(th) (Maks) @ Id: 1.5V @ 250µA,

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SIA950DJ-T1-GE3
Vishay Siliconix

SIA950DJ-T1-GE3

BAGIAN SAHAM: 2859

Tipe FET: 2 N-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 190V, Arus - Pembuangan Kontinu (Id) @ 25°C: 950mA, Rds Aktif (Maks) @ Id, Vgs: 3.8 Ohm @ 360mA, 4.5V, Vgs(th) (Maks) @ Id: 1.4V @ 250µA,

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SI7224DN-T1-E3
Vishay Siliconix

SI7224DN-T1-E3

BAGIAN SAHAM: 139900

Tipe FET: 2 N-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 30V, Arus - Pembuangan Kontinu (Id) @ 25°C: 6A, Rds Aktif (Maks) @ Id, Vgs: 35 mOhm @ 6.5A, 10V, Vgs(th) (Maks) @ Id: 2.2V @ 250µA,

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SI1563DH-T1-GE3
Vishay Siliconix

SI1563DH-T1-GE3

BAGIAN SAHAM: 2825

Tipe FET: N and P-Channel, Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 20V, Arus - Pembuangan Kontinu (Id) @ 25°C: 1.13A, 880mA, Rds Aktif (Maks) @ Id, Vgs: 280 mOhm @ 1.13A, 4.5V, Vgs(th) (Maks) @ Id: 1V @ 100µA,

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SI4569DY-T1-GE3
Vishay Siliconix

SI4569DY-T1-GE3

BAGIAN SAHAM: 2878

Tipe FET: N and P-Channel, Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 40V, Arus - Pembuangan Kontinu (Id) @ 25°C: 7.6A, 7.9A, Rds Aktif (Maks) @ Id, Vgs: 27 mOhm @ 6A, 10V, Vgs(th) (Maks) @ Id: 2V @ 250µA,

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SI6969DQ-T1-GE3
Vishay Siliconix

SI6969DQ-T1-GE3

BAGIAN SAHAM: 3349

Tipe FET: 2 P-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 12V, Rds Aktif (Maks) @ Id, Vgs: 34 mOhm @ 4.6A, 4.5V, Vgs(th) (Maks) @ Id: 450mV @ 250µA (Min),

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SIZ916DT-T1-GE3
Vishay Siliconix

SIZ916DT-T1-GE3

BAGIAN SAHAM: 88099

Tipe FET: 2 N-Channel (Half Bridge), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 30V, Arus - Pembuangan Kontinu (Id) @ 25°C: 16A, 40A, Rds Aktif (Maks) @ Id, Vgs: 6.4 mOhm @ 19A, 10V, Vgs(th) (Maks) @ Id: 2.4V @ 250µA,

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SI7960DP-T1-E3
Vishay Siliconix

SI7960DP-T1-E3

BAGIAN SAHAM: 2783

Tipe FET: 2 N-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 60V, Arus - Pembuangan Kontinu (Id) @ 25°C: 6.2A, Rds Aktif (Maks) @ Id, Vgs: 21 mOhm @ 9.7A, 10V, Vgs(th) (Maks) @ Id: 3V @ 250µA,

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SI4501ADY-T1-E3
Vishay Siliconix

SI4501ADY-T1-E3

BAGIAN SAHAM: 2738

Tipe FET: N and P-Channel, Common Drain, Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 30V, 8V, Arus - Pembuangan Kontinu (Id) @ 25°C: 6.3A, 4.1A, Rds Aktif (Maks) @ Id, Vgs: 18 mOhm @ 8.8A, 10V, Vgs(th) (Maks) @ Id: 1.8V @ 250µA,

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SI3993DV-T1-GE3
Vishay Siliconix

SI3993DV-T1-GE3

BAGIAN SAHAM: 199624

Tipe FET: 2 P-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 30V, Arus - Pembuangan Kontinu (Id) @ 25°C: 1.8A, Rds Aktif (Maks) @ Id, Vgs: 133 mOhm @ 2.2A, 10V, Vgs(th) (Maks) @ Id: 3V @ 250µA,

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SI6926ADQ-T1-GE3
Vishay Siliconix

SI6926ADQ-T1-GE3

BAGIAN SAHAM: 195139

Tipe FET: 2 N-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 20V, Arus - Pembuangan Kontinu (Id) @ 25°C: 4.1A, Rds Aktif (Maks) @ Id, Vgs: 30 mOhm @ 4.5A, 4.5V, Vgs(th) (Maks) @ Id: 1V @ 250µA,

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SI5915BDC-T1-GE3
Vishay Siliconix

SI5915BDC-T1-GE3

BAGIAN SAHAM: 2892

Tipe FET: 2 P-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 8V, Arus - Pembuangan Kontinu (Id) @ 25°C: 4A, Rds Aktif (Maks) @ Id, Vgs: 70 mOhm @ 3.3A, 4.5V, Vgs(th) (Maks) @ Id: 1V @ 250µA,

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SI4916DY-T1-GE3
Vishay Siliconix

SI4916DY-T1-GE3

BAGIAN SAHAM: 93093

Tipe FET: 2 N-Channel (Half Bridge), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 30V, Arus - Pembuangan Kontinu (Id) @ 25°C: 10A, 10.5A, Rds Aktif (Maks) @ Id, Vgs: 18 mOhm @ 10A, 10V, Vgs(th) (Maks) @ Id: 3V @ 250µA,

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SI6928DQ-T1-GE3
Vishay Siliconix

SI6928DQ-T1-GE3

BAGIAN SAHAM: 3373

Tipe FET: 2 N-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 30V, Arus - Pembuangan Kontinu (Id) @ 25°C: 4A, Rds Aktif (Maks) @ Id, Vgs: 35 mOhm @ 4A, 10V, Vgs(th) (Maks) @ Id: 1V @ 250µA,

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SI4933DY-T1-E3
Vishay Siliconix

SI4933DY-T1-E3

BAGIAN SAHAM: 3359

Tipe FET: 2 P-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 12V, Arus - Pembuangan Kontinu (Id) @ 25°C: 7.4A, Rds Aktif (Maks) @ Id, Vgs: 14 mOhm @ 9.8A, 4.5V, Vgs(th) (Maks) @ Id: 1V @ 500µA,

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SI6925ADQ-T1-GE3
Vishay Siliconix

SI6925ADQ-T1-GE3

BAGIAN SAHAM: 2797

Tipe FET: 2 N-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 20V, Arus - Pembuangan Kontinu (Id) @ 25°C: 3.3A, Rds Aktif (Maks) @ Id, Vgs: 45 mOhm @ 3.9A, 4.5V, Vgs(th) (Maks) @ Id: 1.8V @ 250µA,

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SI3981DV-T1-GE3
Vishay Siliconix

SI3981DV-T1-GE3

BAGIAN SAHAM: 2791

Tipe FET: 2 P-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 20V, Arus - Pembuangan Kontinu (Id) @ 25°C: 1.6A, Rds Aktif (Maks) @ Id, Vgs: 185 mOhm @ 1.9A, 4.5V, Vgs(th) (Maks) @ Id: 1.1V @ 250µA,

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SI5920DC-T1-E3
Vishay Siliconix

SI5920DC-T1-E3

BAGIAN SAHAM: 2798

Tipe FET: 2 N-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 8V, Arus - Pembuangan Kontinu (Id) @ 25°C: 4A, Rds Aktif (Maks) @ Id, Vgs: 32 mOhm @ 6.8A, 4.5V, Vgs(th) (Maks) @ Id: 1V @ 250µA,

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SI1913EDH-T1-E3
Vishay Siliconix

SI1913EDH-T1-E3

BAGIAN SAHAM: 2794

Tipe FET: 2 P-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 20V, Arus - Pembuangan Kontinu (Id) @ 25°C: 880mA, Rds Aktif (Maks) @ Id, Vgs: 490 mOhm @ 880mA, 4.5V, Vgs(th) (Maks) @ Id: 450mV @ 100µA,

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SI7214DN-T1-GE3
Vishay Siliconix

SI7214DN-T1-GE3

BAGIAN SAHAM: 99144

Tipe FET: 2 N-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 30V, Arus - Pembuangan Kontinu (Id) @ 25°C: 4.6A, Rds Aktif (Maks) @ Id, Vgs: 40 mOhm @ 6.4A, 10V, Vgs(th) (Maks) @ Id: 3V @ 250µA,

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SI6981DQ-T1-GE3
Vishay Siliconix

SI6981DQ-T1-GE3

BAGIAN SAHAM: 2836

Tipe FET: 2 P-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 20V, Arus - Pembuangan Kontinu (Id) @ 25°C: 4.1A, Rds Aktif (Maks) @ Id, Vgs: 31 mOhm @ 4.8A, 4.5V, Vgs(th) (Maks) @ Id: 900mV @ 300µA,

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SI6562DQ-T1-E3
Vishay Siliconix

SI6562DQ-T1-E3

BAGIAN SAHAM: 3304

Tipe FET: N and P-Channel, Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 20V, Rds Aktif (Maks) @ Id, Vgs: 30 mOhm @ 4.5A, 4.5V, Vgs(th) (Maks) @ Id: 600mV @ 250µA (Min),

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SIZ342DT-T1-GE3
Vishay Siliconix

SIZ342DT-T1-GE3

BAGIAN SAHAM: 178805

Tipe FET: 2 N-Channel (Dual), Tiriskan ke Tegangan Sumber (Vdss): 30V, Arus - Pembuangan Kontinu (Id) @ 25°C: 15.7A (Ta), 100A (Tc), Rds Aktif (Maks) @ Id, Vgs: 11.5 mOhm @ 14A, 10V, Vgs(th) (Maks) @ Id: 2.4V @ 250µA,

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SI4330DY-T1-E3
Vishay Siliconix

SI4330DY-T1-E3

BAGIAN SAHAM: 2782

Tipe FET: 2 N-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 30V, Arus - Pembuangan Kontinu (Id) @ 25°C: 6.6A, Rds Aktif (Maks) @ Id, Vgs: 16.5 mOhm @ 8.7A, 10V, Vgs(th) (Maks) @ Id: 3V @ 250µA,

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SI4953ADY-T1-GE3
Vishay Siliconix

SI4953ADY-T1-GE3

BAGIAN SAHAM: 2804

Tipe FET: 2 P-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 30V, Arus - Pembuangan Kontinu (Id) @ 25°C: 3.7A, Rds Aktif (Maks) @ Id, Vgs: 53 mOhm @ 4.9A, 10V, Vgs(th) (Maks) @ Id: 1V @ 250µA (Min),

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SI4622DY-T1-GE3
Vishay Siliconix

SI4622DY-T1-GE3

BAGIAN SAHAM: 2878

Tipe FET: 2 N-Channel (Dual), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 30V, Arus - Pembuangan Kontinu (Id) @ 25°C: 8A, Rds Aktif (Maks) @ Id, Vgs: 16 mOhm @ 9.6A, 10V, Vgs(th) (Maks) @ Id: 2.5V @ 1mA,

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SI9934BDY-T1-E3
Vishay Siliconix

SI9934BDY-T1-E3

BAGIAN SAHAM: 3305

Tipe FET: 2 P-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 12V, Arus - Pembuangan Kontinu (Id) @ 25°C: 4.8A, Rds Aktif (Maks) @ Id, Vgs: 35 mOhm @ 6.4A, 4.5V, Vgs(th) (Maks) @ Id: 1.4V @ 250µA,

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SI3948DV-T1-E3
Vishay Siliconix

SI3948DV-T1-E3

BAGIAN SAHAM: 2733

Tipe FET: 2 N-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 30V, Rds Aktif (Maks) @ Id, Vgs: 105 mOhm @ 2.5A, 10V, Vgs(th) (Maks) @ Id: 1V @ 250µA (Min),

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SI4914BDY-T1-E3
Vishay Siliconix

SI4914BDY-T1-E3

BAGIAN SAHAM: 118968

Tipe FET: 2 N-Channel (Half Bridge), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 30V, Arus - Pembuangan Kontinu (Id) @ 25°C: 8.4A, 8A, Rds Aktif (Maks) @ Id, Vgs: 21 mOhm @ 8A, 10V, Vgs(th) (Maks) @ Id: 2.7V @ 250µA,

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SI4618DY-T1-GE3
Vishay Siliconix

SI4618DY-T1-GE3

BAGIAN SAHAM: 64981

Tipe FET: 2 N-Channel (Half Bridge), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 30V, Arus - Pembuangan Kontinu (Id) @ 25°C: 8A, 15.2A, Rds Aktif (Maks) @ Id, Vgs: 17 mOhm @ 8A, 10V, Vgs(th) (Maks) @ Id: 2.5V @ 1mA,

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SI6933DQ-T1-E3
Vishay Siliconix

SI6933DQ-T1-E3

BAGIAN SAHAM: 2879

Tipe FET: 2 P-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 30V, Rds Aktif (Maks) @ Id, Vgs: 45 mOhm @ 3.5A, 10V, Vgs(th) (Maks) @ Id: 1V @ 250µA (Min),

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SI4310BDY-T1-E3
Vishay Siliconix

SI4310BDY-T1-E3

BAGIAN SAHAM: 2851

Tipe FET: 2 N-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 30V, Arus - Pembuangan Kontinu (Id) @ 25°C: 7.5A, 9.8A, Rds Aktif (Maks) @ Id, Vgs: 11 mOhm @ 10A, 10V, Vgs(th) (Maks) @ Id: 3V @ 250µA,

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SI6544BDQ-T1-GE3
Vishay Siliconix

SI6544BDQ-T1-GE3

BAGIAN SAHAM: 2882

Tipe FET: N and P-Channel, Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 30V, Arus - Pembuangan Kontinu (Id) @ 25°C: 3.7A, 3.8A, Rds Aktif (Maks) @ Id, Vgs: 43 mOhm @ 3.8A, 10V, Vgs(th) (Maks) @ Id: 3V @ 250µA,

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SI4965DY-T1-E3
Vishay Siliconix

SI4965DY-T1-E3

BAGIAN SAHAM: 2893

Tipe FET: 2 P-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 8V, Rds Aktif (Maks) @ Id, Vgs: 21 mOhm @ 8A, 4.5V, Vgs(th) (Maks) @ Id: 450mV @ 250µA (Min),

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SI4941EDY-T1-E3
Vishay Siliconix

SI4941EDY-T1-E3

BAGIAN SAHAM: 2795

Tipe FET: 2 P-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 30V, Arus - Pembuangan Kontinu (Id) @ 25°C: 10A, Rds Aktif (Maks) @ Id, Vgs: 21 mOhm @ 8.3A, 10V, Vgs(th) (Maks) @ Id: 2.8V @ 250µA,

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SI7904DN-T1-GE3
Vishay Siliconix

SI7904DN-T1-GE3

BAGIAN SAHAM: 2820

Tipe FET: 2 N-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 20V, Arus - Pembuangan Kontinu (Id) @ 25°C: 5.3A, Rds Aktif (Maks) @ Id, Vgs: 30 mOhm @ 7.7A, 4.5V, Vgs(th) (Maks) @ Id: 1V @ 935µA,

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