Dioda - Penyearah - Tunggal | Produk Semikonduktor Diskrit | 100

MUR360S V6G

BAGIAN SAHAM: 110

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-Rata Dikoreksi (Io): 3A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 50ns,

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Taiwan Semiconductor Corporation

SK16B M4G

BAGIAN SAHAM: 72

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 60V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 750mV @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

MUR310S V7G

BAGIAN SAHAM: 104

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-Rata Dikoreksi (Io): 3A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 25ns,

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Taiwan Semiconductor Corporation

SS35 V6G

BAGIAN SAHAM: 48

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 50V, Arus - Rata-Rata Dikoreksi (Io): 3A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

SK110B M4G

BAGIAN SAHAM: 111

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 850mV @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

ES3DV V6G

BAGIAN SAHAM: 130

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-Rata Dikoreksi (Io): 3A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 20ns,

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Taiwan Semiconductor Corporation

HS3M V6G

BAGIAN SAHAM: 48

Tipe Dioda: Standard, Arus - Rata-Rata Dikoreksi (Io): 3A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 75ns,

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Taiwan Semiconductor Corporation

HS3F V7G

BAGIAN SAHAM: 87

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 300V, Arus - Rata-Rata Dikoreksi (Io): 3A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 50ns,

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Taiwan Semiconductor Corporation

MUR305S V7G

BAGIAN SAHAM: 67

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 50V, Arus - Rata-Rata Dikoreksi (Io): 3A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 25ns,

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Taiwan Semiconductor Corporation

S5JB M4G

BAGIAN SAHAM: 141

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-Rata Dikoreksi (Io): 5A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 5A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

S3GBHR5G

BAGIAN SAHAM: 88

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-Rata Dikoreksi (Io): 3A, Tegangan - Maju (Vf) (Maks) @ If: 1.15V @ 3A, Kecepatan: Standard Recovery >500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 1.5µs,

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Taiwan Semiconductor Corporation

S8GC V6G

BAGIAN SAHAM: 129

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-Rata Dikoreksi (Io): 8A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

RS2A M4G

BAGIAN SAHAM: 90

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 50V, Arus - Rata-Rata Dikoreksi (Io): 2A, Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 2A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 150ns,

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Taiwan Semiconductor Corporation

S1DHR3G

BAGIAN SAHAM: 66

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 1A, Kecepatan: Standard Recovery >500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 1.5µs,

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Taiwan Semiconductor Corporation

SK59BHR5G

BAGIAN SAHAM: 138

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 90V, Arus - Rata-Rata Dikoreksi (Io): 5A, Tegangan - Maju (Vf) (Maks) @ If: 850mV @ 5A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

HS1M M2G

BAGIAN SAHAM: 117

Tipe Dioda: Standard, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.7V @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 75ns,

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Taiwan Semiconductor Corporation

SK52BHM4G

BAGIAN SAHAM: 99

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 20V, Arus - Rata-Rata Dikoreksi (Io): 5A, Tegangan - Maju (Vf) (Maks) @ If: 550mV @ 5A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

SK320A M2G

BAGIAN SAHAM: 57

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-Rata Dikoreksi (Io): 3A, Tegangan - Maju (Vf) (Maks) @ If: 950mV @ 3A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

HS2M M4G

BAGIAN SAHAM: 76

Tipe Dioda: Standard, Arus - Rata-Rata Dikoreksi (Io): 2A, Tegangan - Maju (Vf) (Maks) @ If: 1.7V @ 2A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 75ns,

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Taiwan Semiconductor Corporation

RS1GHM2G

BAGIAN SAHAM: 62

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 150ns,

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Taiwan Semiconductor Corporation

SK34BHR5G

BAGIAN SAHAM: 110

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 40V, Arus - Rata-Rata Dikoreksi (Io): 3A, Tegangan - Maju (Vf) (Maks) @ If: 500mV @ 3A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

SK84C V6G

BAGIAN SAHAM: 131

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 40V, Arus - Rata-Rata Dikoreksi (Io): 8A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

SK54B M4G

BAGIAN SAHAM: 65

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 40V, Arus - Rata-Rata Dikoreksi (Io): 5A, Tegangan - Maju (Vf) (Maks) @ If: 550mV @ 5A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

ES1FHM2G

BAGIAN SAHAM: 57

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 300V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 35ns,

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Taiwan Semiconductor Corporation

S4B V6G

BAGIAN SAHAM: 78

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-Rata Dikoreksi (Io): 4A, Kecepatan: Standard Recovery >500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 1.5µs,

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Taiwan Semiconductor Corporation

ES2CAHM2G

BAGIAN SAHAM: 52

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 150V, Arus - Rata-Rata Dikoreksi (Io): 2A, Tegangan - Maju (Vf) (Maks) @ If: 950mV @ 2A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 35ns,

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Taiwan Semiconductor Corporation

RS2JA M2G

BAGIAN SAHAM: 66

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-Rata Dikoreksi (Io): 1.5A, Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 1.5A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 250ns,

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Taiwan Semiconductor Corporation

RS2JAHM2G

BAGIAN SAHAM: 55

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-Rata Dikoreksi (Io): 1.5A, Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 1.5A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 250ns,

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Taiwan Semiconductor Corporation

S1GB M4G

BAGIAN SAHAM: 136

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 1A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

SSL24HR5G

BAGIAN SAHAM: 83

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 40V, Arus - Rata-Rata Dikoreksi (Io): 2A, Tegangan - Maju (Vf) (Maks) @ If: 410mV @ 2A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

SS115 M2G

BAGIAN SAHAM: 82

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 150V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 500mV @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

SS215HR5G

BAGIAN SAHAM: 55

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 150V, Arus - Rata-Rata Dikoreksi (Io): 2A, Tegangan - Maju (Vf) (Maks) @ If: 950mV @ 2A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

ESH2CA R3G

BAGIAN SAHAM: 56

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 150V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 900mV @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 25ns,

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Taiwan Semiconductor Corporation

S2DHM4G

BAGIAN SAHAM: 131

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-Rata Dikoreksi (Io): 2A, Tegangan - Maju (Vf) (Maks) @ If: 1.15V @ 2A, Kecepatan: Standard Recovery >500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 1.5µs,

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Taiwan Semiconductor Corporation

US1G M2G

BAGIAN SAHAM: 92

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 50ns,

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Taiwan Semiconductor Corporation

HS2J M4G

BAGIAN SAHAM: 50

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-Rata Dikoreksi (Io): 2A, Tegangan - Maju (Vf) (Maks) @ If: 1.7V @ 2A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 75ns,

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