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Dioda - Penyearah - Tunggal

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  • Dioda - Penyearah - Tunggal
ES2FHM4G
Taiwan Semiconductor Corporation

ES2FHM4G

BAGIAN SAHAM: 93

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 300V, Arus - Rata-Rata Dikoreksi (Io): 2A, Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 2A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 35ns,

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HS2G M4G
Taiwan Semiconductor Corporation

HS2G M4G

BAGIAN SAHAM: 106

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-Rata Dikoreksi (Io): 2A, Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 2A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 50ns,

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SK320AHM2G
Taiwan Semiconductor Corporation

SK320AHM2G

BAGIAN SAHAM: 75

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-Rata Dikoreksi (Io): 3A, Tegangan - Maju (Vf) (Maks) @ If: 950mV @ 3A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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S3MB M4G
Taiwan Semiconductor Corporation

S3MB M4G

BAGIAN SAHAM: 69

Tipe Dioda: Standard, Arus - Rata-Rata Dikoreksi (Io): 3A, Tegangan - Maju (Vf) (Maks) @ If: 1.15V @ 3A, Kecepatan: Standard Recovery >500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 1.5µs,

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SK83C V7G
Taiwan Semiconductor Corporation

SK83C V7G

BAGIAN SAHAM: 111

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 30V, Arus - Rata-Rata Dikoreksi (Io): 8A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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RS3G V7G
Taiwan Semiconductor Corporation

RS3G V7G

BAGIAN SAHAM: 130

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-Rata Dikoreksi (Io): 3A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 150ns,

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SK13B M4G
Taiwan Semiconductor Corporation

SK13B M4G

BAGIAN SAHAM: 70

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 30V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 500mV @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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RS2K M4G
Taiwan Semiconductor Corporation

RS2K M4G

BAGIAN SAHAM: 97

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 800V, Arus - Rata-Rata Dikoreksi (Io): 2A, Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 2A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 500ns,

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S12GC V6G
Taiwan Semiconductor Corporation

S12GC V6G

BAGIAN SAHAM: 65

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-Rata Dikoreksi (Io): 12A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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RS3M V6G
Taiwan Semiconductor Corporation

RS3M V6G

BAGIAN SAHAM: 56

Tipe Dioda: Standard, Arus - Rata-Rata Dikoreksi (Io): 3A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 500ns,

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ESH3C V6G
Taiwan Semiconductor Corporation

ESH3C V6G

BAGIAN SAHAM: 130

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 150V, Arus - Rata-Rata Dikoreksi (Io): 3A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 20ns,

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S12JC V6G
Taiwan Semiconductor Corporation

S12JC V6G

BAGIAN SAHAM: 107

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-Rata Dikoreksi (Io): 12A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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S1AB R5G
Taiwan Semiconductor Corporation

S1AB R5G

BAGIAN SAHAM: 75

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 50V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 1A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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SS34 V6G
Taiwan Semiconductor Corporation

SS34 V6G

BAGIAN SAHAM: 126

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 40V, Arus - Rata-Rata Dikoreksi (Io): 3A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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S2A M4G
Taiwan Semiconductor Corporation

S2A M4G

BAGIAN SAHAM: 77

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 50V, Arus - Rata-Rata Dikoreksi (Io): 2A, Tegangan - Maju (Vf) (Maks) @ If: 1.15V @ 2A, Kecepatan: Standard Recovery >500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 1.5µs,

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SK84C V7G
Taiwan Semiconductor Corporation

SK84C V7G

BAGIAN SAHAM: 140

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 40V, Arus - Rata-Rata Dikoreksi (Io): 8A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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S12JC V7G
Taiwan Semiconductor Corporation

S12JC V7G

BAGIAN SAHAM: 89

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-Rata Dikoreksi (Io): 12A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 12A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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SK83C V6G
Taiwan Semiconductor Corporation

SK83C V6G

BAGIAN SAHAM: 142

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 30V, Arus - Rata-Rata Dikoreksi (Io): 8A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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SS320 V6G
Taiwan Semiconductor Corporation

SS320 V6G

BAGIAN SAHAM: 90

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-Rata Dikoreksi (Io): 3A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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ES3B V7G
Taiwan Semiconductor Corporation

ES3B V7G

BAGIAN SAHAM: 123

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-Rata Dikoreksi (Io): 3A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 35ns,

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SS29 M4G
Taiwan Semiconductor Corporation

SS29 M4G

BAGIAN SAHAM: 57

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 90V, Arus - Rata-Rata Dikoreksi (Io): 2A, Tegangan - Maju (Vf) (Maks) @ If: 850mV @ 2A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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SS23HM4G
Taiwan Semiconductor Corporation

SS23HM4G

BAGIAN SAHAM: 115

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 30V, Arus - Rata-Rata Dikoreksi (Io): 2A, Tegangan - Maju (Vf) (Maks) @ If: 500mV @ 2A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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RS2KA M2G
Taiwan Semiconductor Corporation

RS2KA M2G

BAGIAN SAHAM: 105

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 800V, Arus - Rata-Rata Dikoreksi (Io): 1.5A, Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 1.5A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 500ns,

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SK59BHM4G
Taiwan Semiconductor Corporation

SK59BHM4G

BAGIAN SAHAM: 61

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 90V, Arus - Rata-Rata Dikoreksi (Io): 5A, Tegangan - Maju (Vf) (Maks) @ If: 850mV @ 5A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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RS2MA M2G
Taiwan Semiconductor Corporation

RS2MA M2G

BAGIAN SAHAM: 130

Tipe Dioda: Standard, Arus - Rata-Rata Dikoreksi (Io): 1.5A, Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 1.5A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 500ns,

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SS22HR5G
Taiwan Semiconductor Corporation

SS22HR5G

BAGIAN SAHAM: 112

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 20V, Arus - Rata-Rata Dikoreksi (Io): 2A, Tegangan - Maju (Vf) (Maks) @ If: 500mV @ 2A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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ESH2B R5G
Taiwan Semiconductor Corporation

ESH2B R5G

BAGIAN SAHAM: 76

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-Rata Dikoreksi (Io): 2A, Tegangan - Maju (Vf) (Maks) @ If: 900mV @ 2A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 20ns,

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S1MBHM4G
Taiwan Semiconductor Corporation

S1MBHM4G

BAGIAN SAHAM: 119

Tipe Dioda: Standard, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 1A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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SK35AHR3G
Taiwan Semiconductor Corporation

SK35AHR3G

BAGIAN SAHAM: 53

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 50V, Arus - Rata-Rata Dikoreksi (Io): 3A, Tegangan - Maju (Vf) (Maks) @ If: 720mV @ 3A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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ESH1B R3G
Taiwan Semiconductor Corporation

ESH1B R3G

BAGIAN SAHAM: 144

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 900mV @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 15ns,

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US1GHR3G
Taiwan Semiconductor Corporation

US1GHR3G

BAGIAN SAHAM: 102

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 50ns,

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ESH2BA R3G
Taiwan Semiconductor Corporation

ESH2BA R3G

BAGIAN SAHAM: 67

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 900mV @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 25ns,

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SS33 V6G
Taiwan Semiconductor Corporation

SS33 V6G

BAGIAN SAHAM: 58

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 30V, Arus - Rata-Rata Dikoreksi (Io): 3A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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S4K V6G
Taiwan Semiconductor Corporation

S4K V6G

BAGIAN SAHAM: 87

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 800V, Arus - Rata-Rata Dikoreksi (Io): 4A, Kecepatan: Standard Recovery >500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 1.5µs,

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SK23A M2G
Taiwan Semiconductor Corporation

SK23A M2G

BAGIAN SAHAM: 111

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 30V, Arus - Rata-Rata Dikoreksi (Io): 2A, Tegangan - Maju (Vf) (Maks) @ If: 500mV @ 2A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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SK19BHM4G
Taiwan Semiconductor Corporation

SK19BHM4G

BAGIAN SAHAM: 128

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 90V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 850mV @ 3A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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