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Dioda - Penyearah - Tunggal

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  • Dioda - Penyearah - Tunggal
S3ABHM4G
Taiwan Semiconductor Corporation

S3ABHM4G

BAGIAN SAHAM: 111

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 50V, Arus - Rata-Rata Dikoreksi (Io): 3A, Tegangan - Maju (Vf) (Maks) @ If: 1.15V @ 3A, Kecepatan: Standard Recovery >500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 1.5µs,

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S4D V6G
Taiwan Semiconductor Corporation

S4D V6G

BAGIAN SAHAM: 142

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-Rata Dikoreksi (Io): 4A, Kecepatan: Standard Recovery >500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 1.5µs,

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SK29AHM2G
Taiwan Semiconductor Corporation

SK29AHM2G

BAGIAN SAHAM: 59

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 90V, Arus - Rata-Rata Dikoreksi (Io): 2A, Tegangan - Maju (Vf) (Maks) @ If: 850mV @ 2A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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S12GC V7G
Taiwan Semiconductor Corporation

S12GC V7G

BAGIAN SAHAM: 58

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-Rata Dikoreksi (Io): 12A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 12A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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RS1B M2G
Taiwan Semiconductor Corporation

RS1B M2G

BAGIAN SAHAM: 48

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 150ns,

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SFF1008GHC0G
Taiwan Semiconductor Corporation

SFF1008GHC0G

BAGIAN SAHAM: 61

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-Rata Dikoreksi (Io): 10A, Tegangan - Maju (Vf) (Maks) @ If: 1.7V @ 10A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 35ns,

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MUR305S V6G
Taiwan Semiconductor Corporation

MUR305S V6G

BAGIAN SAHAM: 100

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 50V, Arus - Rata-Rata Dikoreksi (Io): 3A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 25ns,

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ESH3B V7G
Taiwan Semiconductor Corporation

ESH3B V7G

BAGIAN SAHAM: 74

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-Rata Dikoreksi (Io): 3A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 20ns,

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SSL13HM2G
Taiwan Semiconductor Corporation

SSL13HM2G

BAGIAN SAHAM: 134

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 30V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 390mV @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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ES3F V6G
Taiwan Semiconductor Corporation

ES3F V6G

BAGIAN SAHAM: 116

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 300V, Arus - Rata-Rata Dikoreksi (Io): 3A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 35ns,

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ES2DHM4G
Taiwan Semiconductor Corporation

ES2DHM4G

BAGIAN SAHAM: 119

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-Rata Dikoreksi (Io): 2A, Tegangan - Maju (Vf) (Maks) @ If: 950mV @ 2A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 35ns,

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SK39A M2G
Taiwan Semiconductor Corporation

SK39A M2G

BAGIAN SAHAM: 110

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 90V, Arus - Rata-Rata Dikoreksi (Io): 3A, Tegangan - Maju (Vf) (Maks) @ If: 850mV @ 3A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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HS3J V6G
Taiwan Semiconductor Corporation

HS3J V6G

BAGIAN SAHAM: 53

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-Rata Dikoreksi (Io): 3A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 75ns,

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SS110HR3G
Taiwan Semiconductor Corporation

SS110HR3G

BAGIAN SAHAM: 99

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 500mV @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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RS1K M2G
Taiwan Semiconductor Corporation

RS1K M2G

BAGIAN SAHAM: 111

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 800V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 500ns,

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SK515C V6G
Taiwan Semiconductor Corporation

SK515C V6G

BAGIAN SAHAM: 140

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 150V, Arus - Rata-Rata Dikoreksi (Io): 5A, Tegangan - Maju (Vf) (Maks) @ If: 950mV @ 5A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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US1AHR3G
Taiwan Semiconductor Corporation

US1AHR3G

BAGIAN SAHAM: 67

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 50V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 50ns,

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SSL24 M4G
Taiwan Semiconductor Corporation

SSL24 M4G

BAGIAN SAHAM: 109

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 40V, Arus - Rata-Rata Dikoreksi (Io): 2A, Tegangan - Maju (Vf) (Maks) @ If: 410mV @ 2A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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ES1AHM2G
Taiwan Semiconductor Corporation

ES1AHM2G

BAGIAN SAHAM: 50

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 50V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 950mV @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 35ns,

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ESH1B M2G
Taiwan Semiconductor Corporation

ESH1B M2G

BAGIAN SAHAM: 103

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 900mV @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 15ns,

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US1K M2G
Taiwan Semiconductor Corporation

US1K M2G

BAGIAN SAHAM: 113

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 800V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.7V @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 75ns,

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SK13B R5G
Taiwan Semiconductor Corporation

SK13B R5G

BAGIAN SAHAM: 79

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 30V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 500mV @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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SFF1602GHC0G
Taiwan Semiconductor Corporation

SFF1602GHC0G

BAGIAN SAHAM: 107

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-Rata Dikoreksi (Io): 16A, Tegangan - Maju (Vf) (Maks) @ If: 975mV @ 8A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 35ns,

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ES2CAHR3G
Taiwan Semiconductor Corporation

ES2CAHR3G

BAGIAN SAHAM: 121

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 150V, Arus - Rata-Rata Dikoreksi (Io): 2A, Tegangan - Maju (Vf) (Maks) @ If: 950mV @ 2A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 35ns,

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HS2K M4G
Taiwan Semiconductor Corporation

HS2K M4G

BAGIAN SAHAM: 107

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 800V, Arus - Rata-Rata Dikoreksi (Io): 2A, Tegangan - Maju (Vf) (Maks) @ If: 1.7V @ 2A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 75ns,

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S2JA M2G
Taiwan Semiconductor Corporation

S2JA M2G

BAGIAN SAHAM: 54

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-Rata Dikoreksi (Io): 1.5A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 1.5A, Kecepatan: Standard Recovery >500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 1.5µs,

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S1D M2G
Taiwan Semiconductor Corporation

S1D M2G

BAGIAN SAHAM: 142

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 1A, Kecepatan: Standard Recovery >500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 1.5µs,

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SK215AHM2G
Taiwan Semiconductor Corporation

SK215AHM2G

BAGIAN SAHAM: 62

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 150V, Arus - Rata-Rata Dikoreksi (Io): 2A, Tegangan - Maju (Vf) (Maks) @ If: 950mV @ 2A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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SK115BHM4G
Taiwan Semiconductor Corporation

SK115BHM4G

BAGIAN SAHAM: 97

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 150V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 950mV @ 3A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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SK26AHM2G
Taiwan Semiconductor Corporation

SK26AHM2G

BAGIAN SAHAM: 100

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 60V, Arus - Rata-Rata Dikoreksi (Io): 2A, Tegangan - Maju (Vf) (Maks) @ If: 700mV @ 2A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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S2B M4G
Taiwan Semiconductor Corporation

S2B M4G

BAGIAN SAHAM: 119

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-Rata Dikoreksi (Io): 2A, Tegangan - Maju (Vf) (Maks) @ If: 1.15V @ 2A, Kecepatan: Standard Recovery >500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 1.5µs,

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MUR440S V6G
Taiwan Semiconductor Corporation

MUR440S V6G

BAGIAN SAHAM: 84

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-Rata Dikoreksi (Io): 4A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 50ns,

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HS2KA M2G
Taiwan Semiconductor Corporation

HS2KA M2G

BAGIAN SAHAM: 102

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 800V, Arus - Rata-Rata Dikoreksi (Io): 1.5A, Tegangan - Maju (Vf) (Maks) @ If: 1.7V @ 1.5A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 75ns,

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SSL12HM2G
Taiwan Semiconductor Corporation

SSL12HM2G

BAGIAN SAHAM: 138

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 20V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 390mV @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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SK52C V7G
Taiwan Semiconductor Corporation

SK52C V7G

BAGIAN SAHAM: 75

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 20V, Arus - Rata-Rata Dikoreksi (Io): 5A, Tegangan - Maju (Vf) (Maks) @ If: 550mV @ 5A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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SK32AHM2G
Taiwan Semiconductor Corporation

SK32AHM2G

BAGIAN SAHAM: 62

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 20V, Arus - Rata-Rata Dikoreksi (Io): 3A, Tegangan - Maju (Vf) (Maks) @ If: 550mV @ 3A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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