Tipe FET: N-Channel, Tegangan - Kerusakan (V(BR)GSS): 40V, Arus - Tiriskan (Ids) @ Vds (Vgs=0): 8mA @ 20V, Tegangan - Cutoff (VGS mati) @ Id: 1V @ 1nA,
Tipe FET: N-Channel, Arus - Tiriskan (Ids) @ Vds (Vgs=0): 210µA @ 2V, Drain Saat Ini (Id) - Maks: 1mA, Tegangan - Cutoff (VGS mati) @ Id: 100mV @ 1µA,
Tipe FET: P-Channel, Tegangan - Kerusakan (V(BR)GSS): 30V, Arus - Tiriskan (Ids) @ Vds (Vgs=0): 2mA @ 15V, Tegangan - Cutoff (VGS mati) @ Id: 1V @ 10nA,
Tipe FET: P-Channel, Tegangan - Kerusakan (V(BR)GSS): 30V, Arus - Tiriskan (Ids) @ Vds (Vgs=0): 1.5mA @ 15V, Tegangan - Cutoff (VGS mati) @ Id: 800mV @ 10nA,
Tipe FET: N-Channel, Tegangan - Kerusakan (V(BR)GSS): 40V, Arus - Tiriskan (Ids) @ Vds (Vgs=0): 15mA @ 20V, Tegangan - Cutoff (VGS mati) @ Id: 2V @ 1nA,
Tipe FET: N-Channel, Tegangan - Kerusakan (V(BR)GSS): 30V, Tiriskan ke Tegangan Sumber (Vdss): 30V, Arus - Tiriskan (Ids) @ Vds (Vgs=0): 50mA @ 15V, Tegangan - Cutoff (VGS mati) @ Id: 4V @ 10nA,
Tipe FET: N-Channel, Tegangan - Kerusakan (V(BR)GSS): 30V, Arus - Tiriskan (Ids) @ Vds (Vgs=0): 5mA @ 20V, Tegangan - Cutoff (VGS mati) @ Id: 500mV @ 1nA,
Tipe FET: N-Channel, Tegangan - Kerusakan (V(BR)GSS): 25V, Arus - Tiriskan (Ids) @ Vds (Vgs=0): 30mA @ 15V, Tegangan - Cutoff (VGS mati) @ Id: 1V @ 3nA,
Tipe FET: N-Channel, Tegangan - Kerusakan (V(BR)GSS): 30V, Arus - Tiriskan (Ids) @ Vds (Vgs=0): 25mA @ 20V, Tegangan - Cutoff (VGS mati) @ Id: 2V @ 1nA,
Tipe FET: P-Channel, Tegangan - Kerusakan (V(BR)GSS): 30V, Arus - Tiriskan (Ids) @ Vds (Vgs=0): 2mA @ 15V, Tegangan - Cutoff (VGS mati) @ Id: 500mV @ 1nA,
Tipe FET: N-Channel, Tegangan - Kerusakan (V(BR)GSS): 20V, Arus - Tiriskan (Ids) @ Vds (Vgs=0): 100µA @ 5V, Drain Saat Ini (Id) - Maks: 1mA, Tegangan - Cutoff (VGS mati) @ Id: 600mV @ 1µA,
Tipe FET: N-Channel, Tegangan - Kerusakan (V(BR)GSS): 40V, Arus - Tiriskan (Ids) @ Vds (Vgs=0): 80µA @ 10V, Tegangan - Cutoff (VGS mati) @ Id: 1V @ 1nA,
Tipe FET: N-Channel, Tegangan - Kerusakan (V(BR)GSS): 35V, Arus - Tiriskan (Ids) @ Vds (Vgs=0): 2mA @ 15V, Tegangan - Cutoff (VGS mati) @ Id: 500mV @ 1µA,
Tipe FET: N-Channel, Tegangan - Kerusakan (V(BR)GSS): 35V, Arus - Tiriskan (Ids) @ Vds (Vgs=0): 5mA @ 15V, Tegangan - Cutoff (VGS mati) @ Id: 1V @ 1µA,
Tipe FET: N-Channel, Tegangan - Kerusakan (V(BR)GSS): 25V, Arus - Tiriskan (Ids) @ Vds (Vgs=0): 80mA @ 15V, Tegangan - Cutoff (VGS mati) @ Id: 3V @ 10nA,
Tipe FET: N-Channel, Tegangan - Kerusakan (V(BR)GSS): 25V, Arus - Tiriskan (Ids) @ Vds (Vgs=0): 40mA @ 15V, Tegangan - Cutoff (VGS mati) @ Id: 2V @ 10nA,
Tipe FET: N-Channel, Tegangan - Kerusakan (V(BR)GSS): 50V, Arus - Tiriskan (Ids) @ Vds (Vgs=0): 1.2mA @ 10V, Tegangan - Cutoff (VGS mati) @ Id: 400mV @ 100nA,
Tipe FET: N-Channel, Tegangan - Kerusakan (V(BR)GSS): 20V, Arus - Tiriskan (Ids) @ Vds (Vgs=0): 150µA @ 5V, Drain Saat Ini (Id) - Maks: 1mA, Tegangan - Cutoff (VGS mati) @ Id: 600mV @ 1µA,
Tipe FET: N-Channel, Tegangan - Kerusakan (V(BR)GSS): 40V, Arus - Tiriskan (Ids) @ Vds (Vgs=0): 900µA @ 20V, Tegangan - Cutoff (VGS mati) @ Id: 800mV @ 10nA,
Tipe FET: N-Channel, Tegangan - Kerusakan (V(BR)GSS): 50V, Arus - Tiriskan (Ids) @ Vds (Vgs=0): 600µA @ 10V, Tegangan - Cutoff (VGS mati) @ Id: 400mV @ 100nA,
Tipe FET: N-Channel, Tiriskan ke Tegangan Sumber (Vdss): 40V, Arus - Tiriskan (Ids) @ Vds (Vgs=0): 50µA @ 10V, Drain Saat Ini (Id) - Maks: 1mA,
Tipe FET: N-Channel, Tegangan - Kerusakan (V(BR)GSS): 25V, Arus - Tiriskan (Ids) @ Vds (Vgs=0): 4mA @ 15V, Tegangan - Cutoff (VGS mati) @ Id: 2V @ 10nA,
Tipe FET: N-Channel, Tegangan - Kerusakan (V(BR)GSS): 40V, Arus - Tiriskan (Ids) @ Vds (Vgs=0): 200µA @ 20V, Tegangan - Cutoff (VGS mati) @ Id: 300mV @ 10nA,
Tipe FET: N-Channel, Tegangan - Kerusakan (V(BR)GSS): 30V, Arus - Tiriskan (Ids) @ Vds (Vgs=0): 8mA @ 15V, Tegangan - Cutoff (VGS mati) @ Id: 800mV @ 4nA,
Tipe FET: N-Channel, Arus - Tiriskan (Ids) @ Vds (Vgs=0): 1.2mA @ 10V, Drain Saat Ini (Id) - Maks: 10mA, Tegangan - Cutoff (VGS mati) @ Id: 180mV @ 1µA,
Tipe FET: P-Channel, Tegangan - Kerusakan (V(BR)GSS): 40V, Arus - Tiriskan (Ids) @ Vds (Vgs=0): 1mA @ 15V, Tegangan - Cutoff (VGS mati) @ Id: 750mV @ 1µA,