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Transistor - Bipolar (BJT) - Tunggal, Pra-Bias

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  • Transistor - Bipolar (BJT) - Tunggal, Pra-Bias
DTC114YM3T5G
ON Semiconductor

DTC114YM3T5G

BAGIAN SAHAM: 149165

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 10 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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MUN2130T1
ON Semiconductor

MUN2130T1

BAGIAN SAHAM: 1886

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 1 kOhms, Resistor - Basis Emitor (R2): 1 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V,

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DTA144WM3T5G
ON Semiconductor

DTA144WM3T5G

BAGIAN SAHAM: 145545

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 47 kOhms, Resistor - Basis Emitor (R2): 22 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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NSVMMUN2133LT1G
ON Semiconductor

NSVMMUN2133LT1G

BAGIAN SAHAM: 176066

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 4.7 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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FJY3013R
ON Semiconductor

FJY3013R

BAGIAN SAHAM: 1891

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 2.2 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V,

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MUN2215T1G
ON Semiconductor

MUN2215T1G

BAGIAN SAHAM: 137107

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 10 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

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FJY3014R
ON Semiconductor

FJY3014R

BAGIAN SAHAM: 3270

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 4.7 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V,

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MUN2132T1
ON Semiconductor

MUN2132T1

BAGIAN SAHAM: 1898

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 4.7 kOhms, Resistor - Basis Emitor (R2): 4.7 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V,

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DTC115EET1G
ON Semiconductor

DTC115EET1G

BAGIAN SAHAM: 184884

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 100 kOhms, Resistor - Basis Emitor (R2): 100 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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FJY4007R
ON Semiconductor

FJY4007R

BAGIAN SAHAM: 1870

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 22 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V,

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FJX4011RTF
ON Semiconductor

FJX4011RTF

BAGIAN SAHAM: 1899

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 40V, Resistor - Basis (R1): 22 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V,

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DTA144EET1G
ON Semiconductor

DTA144EET1G

BAGIAN SAHAM: 193208

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 47 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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DTC143EET1G
ON Semiconductor

DTC143EET1G

BAGIAN SAHAM: 145510

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 4.7 kOhms, Resistor - Basis Emitor (R2): 4.7 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V,

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NSVMMUN2232LT3G
ON Semiconductor

NSVMMUN2232LT3G

BAGIAN SAHAM: 186770

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 4.7 kOhms, Resistor - Basis Emitor (R2): 4.7 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V,

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DTA143ZET1
ON Semiconductor

DTA143ZET1

BAGIAN SAHAM: 1895

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 4.7 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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MMUN2111LT1G
ON Semiconductor

MMUN2111LT1G

BAGIAN SAHAM: 178380

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 10 kOhms, Resistor - Basis Emitor (R2): 10 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V,

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SMMUN2114LT1G
ON Semiconductor

SMMUN2114LT1G

BAGIAN SAHAM: 131501

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 10 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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DTA115EET1G
ON Semiconductor

DTA115EET1G

BAGIAN SAHAM: 176363

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 100 kOhms, Resistor - Basis Emitor (R2): 100 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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MUN2111T3
ON Semiconductor

MUN2111T3

BAGIAN SAHAM: 1925

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 10 kOhms, Resistor - Basis Emitor (R2): 10 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V,

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FJX4005RTF
ON Semiconductor

FJX4005RTF

BAGIAN SAHAM: 1869

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 4.7 kOhms, Resistor - Basis Emitor (R2): 10 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V,

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FJY4013R
ON Semiconductor

FJY4013R

BAGIAN SAHAM: 3199

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 2.2 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V,

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FJY4005R
ON Semiconductor

FJY4005R

BAGIAN SAHAM: 1926

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 4.7 kOhms, Resistor - Basis Emitor (R2): 10 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V,

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MUN5234T1G
ON Semiconductor

MUN5234T1G

BAGIAN SAHAM: 103534

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 22 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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MMUN2232LT1G
ON Semiconductor

MMUN2232LT1G

BAGIAN SAHAM: 111952

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 4.7 kOhms, Resistor - Basis Emitor (R2): 4.7 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V,

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SMMUN2211LT1G
ON Semiconductor

SMMUN2211LT1G

BAGIAN SAHAM: 199142

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 10 kOhms, Resistor - Basis Emitor (R2): 10 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V,

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FJY4003R
ON Semiconductor

FJY4003R

BAGIAN SAHAM: 1884

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 22 kOhms, Resistor - Basis Emitor (R2): 22 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V,

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FJY3012R
ON Semiconductor

FJY3012R

BAGIAN SAHAM: 1842

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 40V, Resistor - Basis (R1): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V,

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NSVMUN5132T1G
ON Semiconductor

NSVMUN5132T1G

BAGIAN SAHAM: 147425

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 4.7 kOhms, Resistor - Basis Emitor (R2): 4.7 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V,

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DTC124EET1G
ON Semiconductor

DTC124EET1G

BAGIAN SAHAM: 143586

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 22 kOhms, Resistor - Basis Emitor (R2): 22 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V,

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DTC123EET1G
ON Semiconductor

DTC123EET1G

BAGIAN SAHAM: 138870

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 2.2 kOhms, Resistor - Basis Emitor (R2): 2.2 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V,

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FJY3006R
ON Semiconductor

FJY3006R

BAGIAN SAHAM: 1849

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 10 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V,

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MUN2211T3G
ON Semiconductor

MUN2211T3G

BAGIAN SAHAM: 169238

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 10 kOhms, Resistor - Basis Emitor (R2): 10 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V,

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DTA114TXV3T1G
ON Semiconductor

DTA114TXV3T1G

BAGIAN SAHAM: 1938

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 10 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

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DTA123JET1
ON Semiconductor

DTA123JET1

BAGIAN SAHAM: 1884

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 2.2 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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MMUN2230LT1
ON Semiconductor

MMUN2230LT1

BAGIAN SAHAM: 1914

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 1 kOhms, Resistor - Basis Emitor (R2): 1 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V,

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MUN5212T1G
ON Semiconductor

MUN5212T1G

BAGIAN SAHAM: 121602

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 22 kOhms, Resistor - Basis Emitor (R2): 2.2 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V,

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