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Dioda - Kapasitansi Variabel (Varicaps, Varactors)

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  • Dioda - Kapasitansi Variabel (Varicaps, Varactors)
BBY 58-02W E6327
Infineon Technologies

BBY 58-02W E6327

BAGIAN SAHAM: 7488

Kapasitansi @ Vr, F: 5.5pF @ 6V, 1MHz, Rasio Kapasitansi: 3.5, Kondisi Rasio Kapasitansi: C1/C4, Tegangan - Puncak Terbalik (Maks): 10V, Tipe Dioda: Single,

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BBY 58-02V E6327
Infineon Technologies

BBY 58-02V E6327

BAGIAN SAHAM: 4777

Kapasitansi @ Vr, F: 5.5pF @ 6V, 1MHz, Rasio Kapasitansi: 3.5, Kondisi Rasio Kapasitansi: C1/C4, Tegangan - Puncak Terbalik (Maks): 10V, Tipe Dioda: Single,

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BBY 58-02L E6327
Infineon Technologies

BBY 58-02L E6327

BAGIAN SAHAM: 7490

Kapasitansi @ Vr, F: 5.5pF @ 6V, 1MHz, Rasio Kapasitansi: 3.5, Kondisi Rasio Kapasitansi: C1/C4, Tegangan - Puncak Terbalik (Maks): 10V, Tipe Dioda: Single,

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BBY5705WE6327HTSA1
Infineon Technologies

BBY5705WE6327HTSA1

BAGIAN SAHAM: 7453

Kapasitansi @ Vr, F: 5.5pF @ 4V, 1MHz, Rasio Kapasitansi: 4.5, Kondisi Rasio Kapasitansi: C1/C4, Tegangan - Puncak Terbalik (Maks): 10V, Tipe Dioda: 1 Pair Common Cathode,

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BBY 57-02W E6127
Infineon Technologies

BBY 57-02W E6127

BAGIAN SAHAM: 4808

Kapasitansi @ Vr, F: 5.5pF @ 4V, 1MHz, Rasio Kapasitansi: 4.5, Kondisi Rasio Kapasitansi: C1/C4, Tegangan - Puncak Terbalik (Maks): 10V, Tipe Dioda: Single,

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BBY 57-02L E6327
Infineon Technologies

BBY 57-02L E6327

BAGIAN SAHAM: 7502

Kapasitansi @ Vr, F: 5.5pF @ 4V, 1MHz, Rasio Kapasitansi: 4.5, Kondisi Rasio Kapasitansi: C1/C4, Tegangan - Puncak Terbalik (Maks): 10V, Tipe Dioda: Single,

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BBY 56-02W E6127
Infineon Technologies

BBY 56-02W E6127

BAGIAN SAHAM: 7511

Kapasitansi @ Vr, F: 12.1pF @ 4V, 1MHz, Rasio Kapasitansi: 3.3, Kondisi Rasio Kapasitansi: C1/C3, Tegangan - Puncak Terbalik (Maks): 10V, Tipe Dioda: Single,

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BBY 56-02W E6327
Infineon Technologies

BBY 56-02W E6327

BAGIAN SAHAM: 7517

Kapasitansi @ Vr, F: 12.1pF @ 4V, 1MHz, Rasio Kapasitansi: 3.3, Kondisi Rasio Kapasitansi: C1/C3, Tegangan - Puncak Terbalik (Maks): 10V, Tipe Dioda: Single,

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BBY 55-02V E6327
Infineon Technologies

BBY 55-02V E6327

BAGIAN SAHAM: 7525

Kapasitansi @ Vr, F: 6.5pF @ 10V, 1MHz, Rasio Kapasitansi: 3, Kondisi Rasio Kapasitansi: C2/C10, Tegangan - Puncak Terbalik (Maks): 16V, Tipe Dioda: Single,

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BBY 53 E6327
Infineon Technologies

BBY 53 E6327

BAGIAN SAHAM: 7493

Kapasitansi @ Vr, F: 3.1pF @ 3V, 1MHz, Rasio Kapasitansi: 2.6, Kondisi Rasio Kapasitansi: C1/C3, Tegangan - Puncak Terbalik (Maks): 6V, Tipe Dioda: 1 Pair Common Cathode,

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BBY 53-03LRH E6327
Infineon Technologies

BBY 53-03LRH E6327

BAGIAN SAHAM: 7524

Kapasitansi @ Vr, F: 3.1pF @ 3V, 1MHz, Rasio Kapasitansi: 2.6, Kondisi Rasio Kapasitansi: C1/C3, Tegangan - Puncak Terbalik (Maks): 6V, Tipe Dioda: Single,

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BBY5305WE6327HTSA1
Infineon Technologies

BBY5305WE6327HTSA1

BAGIAN SAHAM: 7453

Kapasitansi @ Vr, F: 3.1pF @ 3V, 1MHz, Rasio Kapasitansi: 2.6, Kondisi Rasio Kapasitansi: C1/C3, Tegangan - Puncak Terbalik (Maks): 6V, Tipe Dioda: 1 Pair Common Cathode,

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BBY 53-02W E6327
Infineon Technologies

BBY 53-02W E6327

BAGIAN SAHAM: 7524

Kapasitansi @ Vr, F: 3.1pF @ 3V, 1MHz, Rasio Kapasitansi: 2.6, Kondisi Rasio Kapasitansi: C1/C3, Tegangan - Puncak Terbalik (Maks): 6V, Tipe Dioda: Single,

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BBY 53-02V E6327
Infineon Technologies

BBY 53-02V E6327

BAGIAN SAHAM: 7478

Kapasitansi @ Vr, F: 3.1pF @ 3V, 1MHz, Rasio Kapasitansi: 2.6, Kondisi Rasio Kapasitansi: C1/C3, Tegangan - Puncak Terbalik (Maks): 6V, Tipe Dioda: Single,

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BBY5302LE6327XTMA1
Infineon Technologies

BBY5302LE6327XTMA1

BAGIAN SAHAM: 7480

Kapasitansi @ Vr, F: 3.1pF @ 3V, 1MHz, Rasio Kapasitansi: 2.6, Kondisi Rasio Kapasitansi: C1/C3, Tegangan - Puncak Terbalik (Maks): 6V, Tipe Dioda: Single,

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BBY 52-02W E6327
Infineon Technologies

BBY 52-02W E6327

BAGIAN SAHAM: 7468

Kapasitansi @ Vr, F: 1.45pF @ 4V, 1MHz, Rasio Kapasitansi: 2.1, Kondisi Rasio Kapasitansi: C1/C4, Tegangan - Puncak Terbalik (Maks): 7V, Tipe Dioda: Single,

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BBY5202LE6327XTMA1
Infineon Technologies

BBY5202LE6327XTMA1

BAGIAN SAHAM: 7459

Kapasitansi @ Vr, F: 1.45pF @ 4V, 1MHz, Rasio Kapasitansi: 2.1, Kondisi Rasio Kapasitansi: C1/C4, Tegangan - Puncak Terbalik (Maks): 7V, Tipe Dioda: Single,

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BBY5103WE6327HTSA1
Infineon Technologies

BBY5103WE6327HTSA1

BAGIAN SAHAM: 4812

Kapasitansi @ Vr, F: 3.7pF @ 4V, 1MHz, Rasio Kapasitansi: 2.2, Kondisi Rasio Kapasitansi: C1/C4, Tegangan - Puncak Terbalik (Maks): 7V, Tipe Dioda: Single,

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BBY 51 E6327
Infineon Technologies

BBY 51 E6327

BAGIAN SAHAM: 7482

Kapasitansi @ Vr, F: 3.7pF @ 4V, 1MHz, Rasio Kapasitansi: 2.2, Kondisi Rasio Kapasitansi: C1/C4, Tegangan - Puncak Terbalik (Maks): 7V, Tipe Dioda: 1 Pair Common Cathode,

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BBY 51-02W E6327
Infineon Technologies

BBY 51-02W E6327

BAGIAN SAHAM: 7487

Kapasitansi @ Vr, F: 3.7pF @ 4V, 1MHz, Rasio Kapasitansi: 2.2, Kondisi Rasio Kapasitansi: C1/C4, Tegangan - Puncak Terbalik (Maks): 7V, Tipe Dioda: Single,

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BBY 51-02L E6327
Infineon Technologies

BBY 51-02L E6327

BAGIAN SAHAM: 7501

Kapasitansi @ Vr, F: 3.7pF @ 4V, 1MHz, Rasio Kapasitansi: 2.2, Kondisi Rasio Kapasitansi: C1/C4, Tegangan - Puncak Terbalik (Maks): 7V, Tipe Dioda: Single,

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BB 833 E6433
Infineon Technologies

BB 833 E6433

BAGIAN SAHAM: 7489

Kapasitansi @ Vr, F: 0.9pF @ 28V, 1MHz, Rasio Kapasitansi: 12.4, Kondisi Rasio Kapasitansi: C1/C28, Tegangan - Puncak Terbalik (Maks): 30V, Tipe Dioda: Single,

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BB814E6327GR2HTSA1
Infineon Technologies

BB814E6327GR2HTSA1

BAGIAN SAHAM: 7435

Kapasitansi @ Vr, F: 22.7pF @ 8V, 1MHz, Rasio Kapasitansi: 2.25, Kondisi Rasio Kapasitansi: C2/C8, Tegangan - Puncak Terbalik (Maks): 18V, Tipe Dioda: 1 Pair Common Cathode, Q @ Vr, F: 200 @ 2V, 100MHz,

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BB 814 E6433 GR1
Infineon Technologies

BB 814 E6433 GR1

BAGIAN SAHAM: 7496

Kapasitansi @ Vr, F: 22.7pF @ 8V, 1MHz, Rasio Kapasitansi: 2.25, Kondisi Rasio Kapasitansi: C2/C8, Tegangan - Puncak Terbalik (Maks): 18V, Tipe Dioda: 1 Pair Common Cathode, Q @ Vr, F: 200 @ 2V, 100MHz,

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BB 814 B6327 GR1
Infineon Technologies

BB 814 B6327 GR1

BAGIAN SAHAM: 7457

Kapasitansi @ Vr, F: 22.7pF @ 8V, 1MHz, Rasio Kapasitansi: 2.25, Kondisi Rasio Kapasitansi: C2/C8, Tegangan - Puncak Terbalik (Maks): 18V, Tipe Dioda: 1 Pair Common Cathode, Q @ Vr, F: 200 @ 2V, 100MHz,

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BB 804 SF3 E6327
Infineon Technologies

BB 804 SF3 E6327

BAGIAN SAHAM: 7510

Kapasitansi @ Vr, F: 47.5pF @ 2V, 1MHz, Rasio Kapasitansi: 1.71, Kondisi Rasio Kapasitansi: C2/C8, Tegangan - Puncak Terbalik (Maks): 18V, Tipe Dioda: 1 Pair Common Cathode, Q @ Vr, F: 200 @ 2V, 100MHz,

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BB804SF2E6327HTSA1
Infineon Technologies

BB804SF2E6327HTSA1

BAGIAN SAHAM: 7462

Kapasitansi @ Vr, F: 47.5pF @ 2V, 1MHz, Rasio Kapasitansi: 1.71, Kondisi Rasio Kapasitansi: C2/C8, Tegangan - Puncak Terbalik (Maks): 18V, Tipe Dioda: 1 Pair Common Cathode, Q @ Vr, F: 200 @ 2V, 100MHz,

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BB 689 E7908
Infineon Technologies

BB 689 E7908

BAGIAN SAHAM: 7500

Kapasitansi @ Vr, F: 2.9pF @ 28V, 1MHz, Rasio Kapasitansi: 23.2, Kondisi Rasio Kapasitansi: C1/C28, Tegangan - Puncak Terbalik (Maks): 30V, Tipe Dioda: Single,

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BB 689-02V E7902
Infineon Technologies

BB 689-02V E7902

BAGIAN SAHAM: 7492

Kapasitansi @ Vr, F: 2.9pF @ 28V, 1MHz, Rasio Kapasitansi: 23.2, Kondisi Rasio Kapasitansi: C1/C28, Tegangan - Puncak Terbalik (Maks): 30V, Tipe Dioda: Single,

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BB 689-02V E7908
Infineon Technologies

BB 689-02V E7908

BAGIAN SAHAM: 4833

Kapasitansi @ Vr, F: 2.9pF @ 28V, 1MHz, Rasio Kapasitansi: 23.2, Kondisi Rasio Kapasitansi: C1/C28, Tegangan - Puncak Terbalik (Maks): 30V, Tipe Dioda: Single,

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BB 664 E7902
Infineon Technologies

BB 664 E7902

BAGIAN SAHAM: 7436

Kapasitansi @ Vr, F: 2.75pF @ 28V, 1MHz, Rasio Kapasitansi: 17.8, Kondisi Rasio Kapasitansi: C1/C28, Tegangan - Puncak Terbalik (Maks): 30V, Tipe Dioda: Single,

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BB669E7904HTSA1
Infineon Technologies

BB669E7904HTSA1

BAGIAN SAHAM: 7478

Kapasitansi @ Vr, F: 2.9pF @ 28V, 1MHz, Rasio Kapasitansi: 23.2, Kondisi Rasio Kapasitansi: C1/C28, Tegangan - Puncak Terbalik (Maks): 30V, Tipe Dioda: Single,

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BB 659C E7902
Infineon Technologies

BB 659C E7902

BAGIAN SAHAM: 7433

Kapasitansi @ Vr, F: 2.75pF @ 28V, 1MHz, Rasio Kapasitansi: 15.3, Kondisi Rasio Kapasitansi: C1/C28, Tegangan - Puncak Terbalik (Maks): 30V, Tipe Dioda: Single,

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BB 659C-02V E7908
Infineon Technologies

BB 659C-02V E7908

BAGIAN SAHAM: 4749

Kapasitansi @ Vr, F: 2.75pF @ 28V, 1MHz, Rasio Kapasitansi: 15.3, Kondisi Rasio Kapasitansi: C1/C28, Tegangan - Puncak Terbalik (Maks): 30V, Tipe Dioda: Single,

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BB 659 E7908
Infineon Technologies

BB 659 E7908

BAGIAN SAHAM: 7428

Kapasitansi @ Vr, F: 2.9pF @ 28V, 1MHz, Rasio Kapasitansi: 14.7, Kondisi Rasio Kapasitansi: C1/C28, Tegangan - Puncak Terbalik (Maks): 30V, Tipe Dioda: Single,

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BB 659C-02V E7902
Infineon Technologies

BB 659C-02V E7902

BAGIAN SAHAM: 7477

Kapasitansi @ Vr, F: 2.75pF @ 28V, 1MHz, Rasio Kapasitansi: 15.3, Kondisi Rasio Kapasitansi: C1/C28, Tegangan - Puncak Terbalik (Maks): 30V, Tipe Dioda: Single,

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