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Dioda - Kapasitansi Variabel (Varicaps, Varactors)

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  • Dioda - Kapasitansi Variabel (Varicaps, Varactors)
BBY6602VH6327XTSA1
Infineon Technologies

BBY6602VH6327XTSA1

BAGIAN SAHAM: 56

Kapasitansi @ Vr, F: 13.5pF @ 4.5V, 1MHz, Rasio Kapasitansi: 5.41, Kondisi Rasio Kapasitansi: C1/C4.5, Tegangan - Puncak Terbalik (Maks): 12V, Tipe Dioda: Single,

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BBY5502VH6327XTSA1
Infineon Technologies

BBY5502VH6327XTSA1

BAGIAN SAHAM: 185858

Kapasitansi @ Vr, F: 6.5pF @ 10V, 1MHz, Rasio Kapasitansi: 3, Kondisi Rasio Kapasitansi: C2/C10, Tegangan - Puncak Terbalik (Maks): 16V, Tipe Dioda: Single,

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BB914E6327HTSA1
Infineon Technologies

BB914E6327HTSA1

BAGIAN SAHAM: 193038

Kapasitansi @ Vr, F: 19.75pF @ 8V, 1MHz, Rasio Kapasitansi: 2.42, Kondisi Rasio Kapasitansi: C2/C8, Tegangan - Puncak Terbalik (Maks): 18V, Tipe Dioda: 1 Pair Common Cathode,

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BB844E6327HTSA1
Infineon Technologies

BB844E6327HTSA1

BAGIAN SAHAM: 139465

Kapasitansi @ Vr, F: 13pF @ 8V, 1MHz, Rasio Kapasitansi: 3.8, Kondisi Rasio Kapasitansi: C2/C8, Tegangan - Puncak Terbalik (Maks): 18V, Tipe Dioda: 1 Pair Common Cathode,

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BBY5503WE6327HTSA1
Infineon Technologies

BBY5503WE6327HTSA1

BAGIAN SAHAM: 189423

Kapasitansi @ Vr, F: 6.5pF @ 10V, 1MHz, Rasio Kapasitansi: 3, Kondisi Rasio Kapasitansi: C2/C10, Tegangan - Puncak Terbalik (Maks): 16V, Tipe Dioda: Single,

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BBY5303WE6327HTSA1
Infineon Technologies

BBY5303WE6327HTSA1

BAGIAN SAHAM: 158786

Kapasitansi @ Vr, F: 3.1pF @ 3V, 1MHz, Rasio Kapasitansi: 2.6, Kondisi Rasio Kapasitansi: C1/C3, Tegangan - Puncak Terbalik (Maks): 6V, Tipe Dioda: Single,

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BB565H7912XTSA1
Infineon Technologies

BB565H7912XTSA1

BAGIAN SAHAM: 7512

Kapasitansi @ Vr, F: 2.2pF @ 28V, 1MHz, Rasio Kapasitansi: 11, Kondisi Rasio Kapasitansi: C1/C28, Tegangan - Puncak Terbalik (Maks): 30V, Tipe Dioda: Single,

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BB659H7902XTSA1
Infineon Technologies

BB659H7902XTSA1

BAGIAN SAHAM: 4808

Kapasitansi @ Vr, F: 2.9pF @ 28V, 1MHz, Rasio Kapasitansi: 14.7, Kondisi Rasio Kapasitansi: C1/C28, Tegangan - Puncak Terbalik (Maks): 30V, Tipe Dioda: Single,

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BB 659C-02V E7912
Infineon Technologies

BB 659C-02V E7912

BAGIAN SAHAM: 7544

Kapasitansi @ Vr, F: 2.75pF @ 28V, 1MHz, Rasio Kapasitansi: 15.3, Kondisi Rasio Kapasitansi: C1/C28, Tegangan - Puncak Terbalik (Maks): 30V, Tipe Dioda: Single,

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BB555H7912XTSA1
Infineon Technologies

BB555H7912XTSA1

BAGIAN SAHAM: 7471

Kapasitansi @ Vr, F: 2.3pF @ 28V, 1MHz, Rasio Kapasitansi: 9.8, Kondisi Rasio Kapasitansi: C1/C28, Tegangan - Puncak Terbalik (Maks): 30V, Tipe Dioda: Single,

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BB55502VH7902XTSA1
Infineon Technologies

BB55502VH7902XTSA1

BAGIAN SAHAM: 4749

Kapasitansi @ Vr, F: 2.3pF @ 28V, 1MHz, Rasio Kapasitansi: 9.8, Kondisi Rasio Kapasitansi: C1/C28, Tegangan - Puncak Terbalik (Maks): 30V, Tipe Dioda: Single,

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BBY5603WE6327HTSA1
Infineon Technologies

BBY5603WE6327HTSA1

BAGIAN SAHAM: 7538

Kapasitansi @ Vr, F: 12.1pF @ 4V, 1MHz, Rasio Kapasitansi: 3.3, Kondisi Rasio Kapasitansi: C1/C3, Tegangan - Puncak Terbalik (Maks): 10V, Tipe Dioda: Single,

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BBY 51 E6433
Infineon Technologies

BBY 51 E6433

BAGIAN SAHAM: 4831

Kapasitansi @ Vr, F: 3.7pF @ 4V, 1MHz, Rasio Kapasitansi: 2.2, Kondisi Rasio Kapasitansi: C1/C4, Tegangan - Puncak Terbalik (Maks): 7V, Tipe Dioda: 1 Pair Common Cathode,

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BB804SF1E6327HTSA1
Infineon Technologies

BB804SF1E6327HTSA1

BAGIAN SAHAM: 4789

Kapasitansi @ Vr, F: 47.5pF @ 2V, 1MHz, Rasio Kapasitansi: 1.71, Kondisi Rasio Kapasitansi: C2/C8, Tegangan - Puncak Terbalik (Maks): 18V, Tipe Dioda: 1 Pair Common Cathode, Q @ Vr, F: 200 @ 2V, 100MHz,

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BB 689 E7902
Infineon Technologies

BB 689 E7902

BAGIAN SAHAM: 4783

Kapasitansi @ Vr, F: 2.9pF @ 28V, 1MHz, Rasio Kapasitansi: 23.2, Kondisi Rasio Kapasitansi: C1/C28, Tegangan - Puncak Terbalik (Maks): 30V, Tipe Dioda: Single,

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BB 664-02V E7902
Infineon Technologies

BB 664-02V E7902

BAGIAN SAHAM: 4846

Kapasitansi @ Vr, F: 2.75pF @ 28V, 1MHz, Rasio Kapasitansi: 17.8, Kondisi Rasio Kapasitansi: C1/C28, Tegangan - Puncak Terbalik (Maks): 30V, Tipe Dioda: Single,

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BBY5302VH6327XTSA1
Infineon Technologies

BBY5302VH6327XTSA1

BAGIAN SAHAM: 104813

Kapasitansi @ Vr, F: 3.1pF @ 3V, 1MHz, Rasio Kapasitansi: 2.6, Kondisi Rasio Kapasitansi: C1/C3, Tegangan - Puncak Terbalik (Maks): 6V, Tipe Dioda: Single,

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BBY 55-02W E6327
Infineon Technologies

BBY 55-02W E6327

BAGIAN SAHAM: 7472

Kapasitansi @ Vr, F: 6.5pF @ 10V, 1MHz, Rasio Kapasitansi: 3, Kondisi Rasio Kapasitansi: C2/C10, Tegangan - Puncak Terbalik (Maks): 16V, Tipe Dioda: Single,

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BB659C02VH7912XTSA1
Infineon Technologies

BB659C02VH7912XTSA1

BAGIAN SAHAM: 136293

Kapasitansi @ Vr, F: 2.75pF @ 28V, 1MHz, Rasio Kapasitansi: 15.3, Kondisi Rasio Kapasitansi: C1/C28, Tegangan - Puncak Terbalik (Maks): 30V, Tipe Dioda: Single,

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BB55502VH7912XTSA1
Infineon Technologies

BB55502VH7912XTSA1

BAGIAN SAHAM: 156352

Kapasitansi @ Vr, F: 2.3pF @ 28V, 1MHz, Rasio Kapasitansi: 9.8, Kondisi Rasio Kapasitansi: C1/C28, Tegangan - Puncak Terbalik (Maks): 30V, Tipe Dioda: Single,

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BBY5102VH6327XTSA1
Infineon Technologies

BBY5102VH6327XTSA1

BAGIAN SAHAM: 7484

Kapasitansi @ Vr, F: 3.7pF @ 4V, 1MHz, Rasio Kapasitansi: 2.2, Kondisi Rasio Kapasitansi: C1/C4, Tegangan - Puncak Terbalik (Maks): 7V, Tipe Dioda: Single,

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BBY5803WE6327HTSA1
Infineon Technologies

BBY5803WE6327HTSA1

BAGIAN SAHAM: 7455

Kapasitansi @ Vr, F: 5.5pF @ 6V, 1MHz, Rasio Kapasitansi: 3.5, Kondisi Rasio Kapasitansi: C1/C4, Tegangan - Puncak Terbalik (Maks): 10V, Tipe Dioda: Single,

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BBY5202WH6327XTSA1
Infineon Technologies

BBY5202WH6327XTSA1

BAGIAN SAHAM: 7542

Kapasitansi @ Vr, F: 1.45pF @ 4V, 1MHz, Rasio Kapasitansi: 2.1, Kondisi Rasio Kapasitansi: C1/C4, Tegangan - Puncak Terbalik (Maks): 7V, Tipe Dioda: Single,

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BB 659C-02V H7902
Infineon Technologies

BB 659C-02V H7902

BAGIAN SAHAM: 7491

Kapasitansi @ Vr, F: 2.75pF @ 28V, 1MHz, Rasio Kapasitansi: 15.3, Kondisi Rasio Kapasitansi: C1/C28, Tegangan - Puncak Terbalik (Maks): 30V, Tipe Dioda: Single,

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BB639CE7904HTSA1
Infineon Technologies

BB639CE7904HTSA1

BAGIAN SAHAM: 178038

Kapasitansi @ Vr, F: 2.75pF @ 28V, 1MHz, Rasio Kapasitansi: 15.3, Kondisi Rasio Kapasitansi: C1/C28, Tegangan - Puncak Terbalik (Maks): 30V, Tipe Dioda: Single,

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BB545E7904HTSA1
Infineon Technologies

BB545E7904HTSA1

BAGIAN SAHAM: 141655

Kapasitansi @ Vr, F: 2.2pF @ 28V, 1MHz, Rasio Kapasitansi: 11, Kondisi Rasio Kapasitansi: C1/C28, Tegangan - Puncak Terbalik (Maks): 30V, Tipe Dioda: Single,

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BB689H7912XTSA1
Infineon Technologies

BB689H7912XTSA1

BAGIAN SAHAM: 7530

Kapasitansi @ Vr, F: 2.9pF @ 28V, 1MHz, Rasio Kapasitansi: 23.2, Kondisi Rasio Kapasitansi: C1/C28, Tegangan - Puncak Terbalik (Maks): 30V, Tipe Dioda: Single,

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BBY5702WH6327XTSA1
Infineon Technologies

BBY5702WH6327XTSA1

BAGIAN SAHAM: 7485

Kapasitansi @ Vr, F: 5.5pF @ 4V, 1MHz, Rasio Kapasitansi: 4.5, Kondisi Rasio Kapasitansi: C1/C4, Tegangan - Puncak Terbalik (Maks): 10V, Tipe Dioda: Single,

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BB857H7902XTSA1
Infineon Technologies

BB857H7902XTSA1

BAGIAN SAHAM: 7523

Kapasitansi @ Vr, F: 0.52pF @ 28V, 1MHz, Rasio Kapasitansi: 12.7, Kondisi Rasio Kapasitansi: C1/C28, Tegangan - Puncak Terbalik (Maks): 30V, Tipe Dioda: Single,

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BBY5806WH6327XTSA1
Infineon Technologies

BBY5806WH6327XTSA1

BAGIAN SAHAM: 7501

Kapasitansi @ Vr, F: 5.5pF @ 6V, 1MHz, Rasio Kapasitansi: 3.5, Kondisi Rasio Kapasitansi: C1/C4, Tegangan - Puncak Terbalik (Maks): 10V, Tipe Dioda: 1 Pair Common Anode,

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BBY5805WH6327XTSA1
Infineon Technologies

BBY5805WH6327XTSA1

BAGIAN SAHAM: 7525

Kapasitansi @ Vr, F: 5.5pF @ 6V, 1MHz, Rasio Kapasitansi: 3.5, Kondisi Rasio Kapasitansi: C1/C4, Tegangan - Puncak Terbalik (Maks): 10V, Tipe Dioda: 1 Pair Common Cathode,

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BBY5705WH6327XTSA1
Infineon Technologies

BBY5705WH6327XTSA1

BAGIAN SAHAM: 7462

Kapasitansi @ Vr, F: 5.5pF @ 4V, 1MHz, Rasio Kapasitansi: 4.5, Kondisi Rasio Kapasitansi: C1/C4, Tegangan - Puncak Terbalik (Maks): 10V, Tipe Dioda: 1 Pair Common Cathode,

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BBY5802WH6327XTSA1
Infineon Technologies

BBY5802WH6327XTSA1

BAGIAN SAHAM: 7460

Kapasitansi @ Vr, F: 5.5pF @ 6V, 1MHz, Rasio Kapasitansi: 3.5, Kondisi Rasio Kapasitansi: C1/C4, Tegangan - Puncak Terbalik (Maks): 10V, Tipe Dioda: Single,

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BBY5602WH6327XTSA1
Infineon Technologies

BBY5602WH6327XTSA1

BAGIAN SAHAM: 7462

Kapasitansi @ Vr, F: 12.1pF @ 4V, 1MHz, Rasio Kapasitansi: 3.3, Kondisi Rasio Kapasitansi: C1/C3, Tegangan - Puncak Terbalik (Maks): 10V, Tipe Dioda: Single,

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BBY5502WH6327XTSA1
Infineon Technologies

BBY5502WH6327XTSA1

BAGIAN SAHAM: 7451

Kapasitansi @ Vr, F: 6.5pF @ 10V, 1MHz, Rasio Kapasitansi: 3, Kondisi Rasio Kapasitansi: C2/C10, Tegangan - Puncak Terbalik (Maks): 16V, Tipe Dioda: Single,

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BBY5305WH6327XTSA1
Infineon Technologies

BBY5305WH6327XTSA1

BAGIAN SAHAM: 7514

Kapasitansi @ Vr, F: 3.1pF @ 3V, 1MHz, Rasio Kapasitansi: 2.6, Kondisi Rasio Kapasitansi: C1/C3, Tegangan - Puncak Terbalik (Maks): 6V, Tipe Dioda: 1 Pair Common Cathode,

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