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Dioda - Kapasitansi Variabel (Varicaps, Varactors)

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  • Dioda - Kapasitansi Variabel (Varicaps, Varactors)
BBY5302WH6327XTSA1
Infineon Technologies

BBY5302WH6327XTSA1

BAGIAN SAHAM: 7480

Kapasitansi @ Vr, F: 3.1pF @ 3V, 1MHz, Rasio Kapasitansi: 2.6, Kondisi Rasio Kapasitansi: C1/C3, Tegangan - Puncak Terbalik (Maks): 6V, Tipe Dioda: Single,

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BBY5102WH6327XTSA1
Infineon Technologies

BBY5102WH6327XTSA1

BAGIAN SAHAM: 7464

Kapasitansi @ Vr, F: 3.7pF @ 4V, 1MHz, Rasio Kapasitansi: 2.2, Kondisi Rasio Kapasitansi: C1/C4, Tegangan - Puncak Terbalik (Maks): 7V, Tipe Dioda: Single,

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BB68902VH7902XTSA1
Infineon Technologies

BB68902VH7902XTSA1

BAGIAN SAHAM: 7489

Kapasitansi @ Vr, F: 2.9pF @ 28V, 1MHz, Rasio Kapasitansi: 23.2, Kondisi Rasio Kapasitansi: C1/C28, Tegangan - Puncak Terbalik (Maks): 30V, Tipe Dioda: Single,

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BB68902VH7908XTSA1
Infineon Technologies

BB68902VH7908XTSA1

BAGIAN SAHAM: 7538

Kapasitansi @ Vr, F: 2.9pF @ 28V, 1MHz, Rasio Kapasitansi: 23.2, Kondisi Rasio Kapasitansi: C1/C28, Tegangan - Puncak Terbalik (Maks): 30V, Tipe Dioda: Single,

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BB689H7903XTMA1
Infineon Technologies

BB689H7903XTMA1

BAGIAN SAHAM: 7534

Kapasitansi @ Vr, F: 2.9pF @ 28V, 1MHz, Rasio Kapasitansi: 23.2, Kondisi Rasio Kapasitansi: C1/C28, Tegangan - Puncak Terbalik (Maks): 30V, Tipe Dioda: Single,

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BB689H7908XTSA1
Infineon Technologies

BB689H7908XTSA1

BAGIAN SAHAM: 7505

Kapasitansi @ Vr, F: 2.9pF @ 28V, 1MHz, Rasio Kapasitansi: 23.2, Kondisi Rasio Kapasitansi: C1/C28, Tegangan - Puncak Terbalik (Maks): 30V, Tipe Dioda: Single,

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BB689H7902XTSA1
Infineon Technologies

BB689H7902XTSA1

BAGIAN SAHAM: 7448

Kapasitansi @ Vr, F: 2.9pF @ 28V, 1MHz, Rasio Kapasitansi: 23.2, Kondisi Rasio Kapasitansi: C1/C28, Tegangan - Puncak Terbalik (Maks): 30V, Tipe Dioda: Single,

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BB66402VH7902XTSA1
Infineon Technologies

BB66402VH7902XTSA1

BAGIAN SAHAM: 165267

Kapasitansi @ Vr, F: 2.75pF @ 28V, 1MHz, Rasio Kapasitansi: 17.8, Kondisi Rasio Kapasitansi: C1/C28, Tegangan - Puncak Terbalik (Maks): 30V, Tipe Dioda: Single,

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BB659C02VH7908XTSA1
Infineon Technologies

BB659C02VH7908XTSA1

BAGIAN SAHAM: 7506

Kapasitansi @ Vr, F: 2.75pF @ 28V, 1MHz, Rasio Kapasitansi: 15.3, Kondisi Rasio Kapasitansi: C1/C28, Tegangan - Puncak Terbalik (Maks): 30V, Tipe Dioda: Single,

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BB664H7902XTSA1
Infineon Technologies

BB664H7902XTSA1

BAGIAN SAHAM: 7514

Kapasitansi @ Vr, F: 2.75pF @ 28V, 1MHz, Rasio Kapasitansi: 17.8, Kondisi Rasio Kapasitansi: C1/C28, Tegangan - Puncak Terbalik (Maks): 30V, Tipe Dioda: Single,

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BB659CH7912XTSA1
Infineon Technologies

BB659CH7912XTSA1

BAGIAN SAHAM: 4837

Kapasitansi @ Vr, F: 2.75pF @ 28V, 1MHz, Rasio Kapasitansi: 15.3, Kondisi Rasio Kapasitansi: C1/C28, Tegangan - Puncak Terbalik (Maks): 30V, Tipe Dioda: Single,

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BB659CH7903XTMA1
Infineon Technologies

BB659CH7903XTMA1

BAGIAN SAHAM: 7528

Kapasitansi @ Vr, F: 2.75pF @ 28V, 1MHz, Rasio Kapasitansi: 15.3, Kondisi Rasio Kapasitansi: C1/C28, Tegangan - Puncak Terbalik (Maks): 30V, Tipe Dioda: Single,

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BB659CH7902XTSA1
Infineon Technologies

BB659CH7902XTSA1

BAGIAN SAHAM: 7536

Kapasitansi @ Vr, F: 2.75pF @ 28V, 1MHz, Rasio Kapasitansi: 15.3, Kondisi Rasio Kapasitansi: C1/C28, Tegangan - Puncak Terbalik (Maks): 30V, Tipe Dioda: Single,

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BB56502VH7902XTSA1
Infineon Technologies

BB56502VH7902XTSA1

BAGIAN SAHAM: 167849

Kapasitansi @ Vr, F: 2.2pF @ 28V, 1MHz, Rasio Kapasitansi: 11, Kondisi Rasio Kapasitansi: C1/C28, Tegangan - Puncak Terbalik (Maks): 30V, Tipe Dioda: Single,

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BB565H7903XTMA1
Infineon Technologies

BB565H7903XTMA1

BAGIAN SAHAM: 4762

Kapasitansi @ Vr, F: 2.2pF @ 28V, 1MHz, Rasio Kapasitansi: 11, Kondisi Rasio Kapasitansi: C1/C28, Tegangan - Puncak Terbalik (Maks): 30V, Tipe Dioda: Single,

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BB565H7908XTSA1
Infineon Technologies

BB565H7908XTSA1

BAGIAN SAHAM: 7479

Kapasitansi @ Vr, F: 2.2pF @ 28V, 1MHz, Rasio Kapasitansi: 11, Kondisi Rasio Kapasitansi: C1/C28, Tegangan - Puncak Terbalik (Maks): 30V, Tipe Dioda: Single,

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BB565H7902XTSA1
Infineon Technologies

BB565H7902XTSA1

BAGIAN SAHAM: 7494

Kapasitansi @ Vr, F: 2.2pF @ 28V, 1MHz, Rasio Kapasitansi: 11, Kondisi Rasio Kapasitansi: C1/C28, Tegangan - Puncak Terbalik (Maks): 30V, Tipe Dioda: Single,

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BB555H7902XTSA1
Infineon Technologies

BB555H7902XTSA1

BAGIAN SAHAM: 4767

Kapasitansi @ Vr, F: 2.3pF @ 28V, 1MHz, Rasio Kapasitansi: 9.8, Kondisi Rasio Kapasitansi: C1/C28, Tegangan - Puncak Terbalik (Maks): 30V, Tipe Dioda: Single,

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BBY 66-02V E6327
Infineon Technologies

BBY 66-02V E6327

BAGIAN SAHAM: 7461

Kapasitansi @ Vr, F: 13.5pF @ 4.5V, 1MHz, Rasio Kapasitansi: 5.41, Kondisi Rasio Kapasitansi: C1/C4.5, Tegangan - Puncak Terbalik (Maks): 12V, Tipe Dioda: Single,

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BB 689 E7903
Infineon Technologies

BB 689 E7903

BAGIAN SAHAM: 7446

Kapasitansi @ Vr, F: 2.9pF @ 28V, 1MHz, Rasio Kapasitansi: 23.2, Kondisi Rasio Kapasitansi: C1/C28, Tegangan - Puncak Terbalik (Maks): 30V, Tipe Dioda: Single,

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BBY5202LE6816XTMA1
Infineon Technologies

BBY5202LE6816XTMA1

BAGIAN SAHAM: 7471

Kapasitansi @ Vr, F: 1.45pF @ 4V, 1MHz, Rasio Kapasitansi: 2.1, Kondisi Rasio Kapasitansi: C1/C4, Tegangan - Puncak Terbalik (Maks): 7V, Tipe Dioda: Single,

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BB 659C E7912
Infineon Technologies

BB 659C E7912

BAGIAN SAHAM: 7502

Kapasitansi @ Vr, F: 2.75pF @ 28V, 1MHz, Rasio Kapasitansi: 15.3, Kondisi Rasio Kapasitansi: C1/C28, Tegangan - Puncak Terbalik (Maks): 30V, Tipe Dioda: Single,

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BB639CE7908HTSA1
Infineon Technologies

BB639CE7908HTSA1

BAGIAN SAHAM: 7455

Kapasitansi @ Vr, F: 2.75pF @ 28V, 1MHz, Rasio Kapasitansi: 15.3, Kondisi Rasio Kapasitansi: C1/C28, Tegangan - Puncak Terbalik (Maks): 30V, Tipe Dioda: Single,

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BB 555-02V E7912
Infineon Technologies

BB 555-02V E7912

BAGIAN SAHAM: 7492

Kapasitansi @ Vr, F: 2.3pF @ 28V, 1MHz, Rasio Kapasitansi: 9.8, Kondisi Rasio Kapasitansi: C1/C28, Tegangan - Puncak Terbalik (Maks): 30V, Tipe Dioda: Single,

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BB 555 E7912
Infineon Technologies

BB 555 E7912

BAGIAN SAHAM: 7497

Kapasitansi @ Vr, F: 2.3pF @ 28V, 1MHz, Rasio Kapasitansi: 9.8, Kondisi Rasio Kapasitansi: C1/C28, Tegangan - Puncak Terbalik (Maks): 30V, Tipe Dioda: Single,

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BB 857 E7902
Infineon Technologies

BB 857 E7902

BAGIAN SAHAM: 7511

Kapasitansi @ Vr, F: 0.52pF @ 28V, 1MHz, Rasio Kapasitansi: 12.7, Kondisi Rasio Kapasitansi: C1/C28, Tegangan - Puncak Terbalik (Maks): 30V, Tipe Dioda: Single,

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BBY 57-02W E6327
Infineon Technologies

BBY 57-02W E6327

BAGIAN SAHAM: 7470

Kapasitansi @ Vr, F: 5.5pF @ 4V, 1MHz, Rasio Kapasitansi: 4.5, Kondisi Rasio Kapasitansi: C1/C4, Tegangan - Puncak Terbalik (Maks): 10V, Tipe Dioda: Single,

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BB831E7904HTSA1
Infineon Technologies

BB831E7904HTSA1

BAGIAN SAHAM: 7490

Kapasitansi @ Vr, F: 1.2pF @ 28V, 1MHz, Rasio Kapasitansi: 9.5, Kondisi Rasio Kapasitansi: C1/C28, Tegangan - Puncak Terbalik (Maks): 30V, Tipe Dioda: Single,

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BBY 61-02LS E6327
Infineon Technologies

BBY 61-02LS E6327

BAGIAN SAHAM: 7463

Rasio Kapasitansi: 2.45, Tegangan - Puncak Terbalik (Maks): 10V, Tipe Dioda: Single,

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BBY6605WE6327HTSA1
Infineon Technologies

BBY6605WE6327HTSA1

BAGIAN SAHAM: 7468

Kapasitansi @ Vr, F: 13.5pF @ 4.5V, 1MHz, Rasio Kapasitansi: 5.41, Kondisi Rasio Kapasitansi: C1/C4.5, Tegangan - Puncak Terbalik (Maks): 12V, Tipe Dioda: 1 Pair Common Cathode,

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BBY 66-05 E6327
Infineon Technologies

BBY 66-05 E6327

BAGIAN SAHAM: 7484

Kapasitansi @ Vr, F: 13.5pF @ 4.5V, 1MHz, Rasio Kapasitansi: 5.41, Kondisi Rasio Kapasitansi: C1/C4.5, Tegangan - Puncak Terbalik (Maks): 12V, Tipe Dioda: 1 Pair Common Cathode,

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BBY 65-02V E6327
Infineon Technologies

BBY 65-02V E6327

BAGIAN SAHAM: 7520

Kapasitansi @ Vr, F: 2.8pF @ 4.7V, 1MHz, Rasio Kapasitansi: 10.9, Kondisi Rasio Kapasitansi: C0.3/C4.7, Tegangan - Puncak Terbalik (Maks): 15V, Tipe Dioda: Single,

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BBY 59-02V E6327
Infineon Technologies

BBY 59-02V E6327

BAGIAN SAHAM: 7503

Kapasitansi @ Vr, F: 7.8pF @ 4V, 1MHz, Rasio Kapasitansi: 4.6, Kondisi Rasio Kapasitansi: C1/C4, Tegangan - Puncak Terbalik (Maks): 15V, Tipe Dioda: Single,

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BBY5806WE6327BTSA1
Infineon Technologies

BBY5806WE6327BTSA1

BAGIAN SAHAM: 7439

Kapasitansi @ Vr, F: 5.5pF @ 6V, 1MHz, Rasio Kapasitansi: 3.5, Kondisi Rasio Kapasitansi: C1/C4, Tegangan - Puncak Terbalik (Maks): 10V, Tipe Dioda: 1 Pair Common Anode,

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BBY5805WE6327BTSA1
Infineon Technologies

BBY5805WE6327BTSA1

BAGIAN SAHAM: 7469

Kapasitansi @ Vr, F: 5.5pF @ 6V, 1MHz, Rasio Kapasitansi: 3.5, Kondisi Rasio Kapasitansi: C1/C4, Tegangan - Puncak Terbalik (Maks): 10V, Tipe Dioda: 1 Pair Common Cathode,

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BBY5802WE6127XT
Infineon Technologies

BBY5802WE6127XT

BAGIAN SAHAM: 7484

Kapasitansi @ Vr, F: 5.5pF @ 6V, 1MHz, Rasio Kapasitansi: 3.5, Kondisi Rasio Kapasitansi: C1/C4, Tegangan - Puncak Terbalik (Maks): 10V, Tipe Dioda: Single,

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