Dioda - Penyearah - Array | Produk Semikonduktor Diskrit | 3

GSXD060A018S1-D3

BAGIAN SAHAM: 3533

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 180V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 60A, Tegangan - Maju (Vf) (Maks) @ If: 920mV @ 60A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Global Power Technologies Group

GSXD060A010S1-D3

BAGIAN SAHAM: 4530

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 60A, Tegangan - Maju (Vf) (Maks) @ If: 840mV @ 60A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Global Power Technologies Group

GSXF100A100S1-D3

BAGIAN SAHAM: 3391

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 1000V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 100A, Tegangan - Maju (Vf) (Maks) @ If: 2.35V @ 100A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Global Power Technologies Group

GSXD100A012S1-D3

BAGIAN SAHAM: 3525

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 120V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 100A, Tegangan - Maju (Vf) (Maks) @ If: 880mV @ 100A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Global Power Technologies Group

GSXF060A120S1-D3

BAGIAN SAHAM: 3187

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 1200V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 60A, Tegangan - Maju (Vf) (Maks) @ If: 2.35V @ 60A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Global Power Technologies Group

GSXD160A015S1-D3

BAGIAN SAHAM: 2582

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 150V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 160A, Tegangan - Maju (Vf) (Maks) @ If: 880mV @ 160A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Global Power Technologies Group

GSXD120A004S1-D3

BAGIAN SAHAM: 3499

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 45V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 120A, Tegangan - Maju (Vf) (Maks) @ If: 700mV @ 120A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Global Power Technologies Group

GSXF030A020S1-D3

BAGIAN SAHAM: 4278

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 30A, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 30A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Global Power Technologies Group

GSXD100A018S1-D3

BAGIAN SAHAM: 3373

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 180V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 100A, Tegangan - Maju (Vf) (Maks) @ If: 920mV @ 100A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Global Power Technologies Group

GSXD050A015S1-D3

BAGIAN SAHAM: 4033

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 150V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 50A, Tegangan - Maju (Vf) (Maks) @ If: 880mV @ 50A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Global Power Technologies Group

GSXF120A120S1-D3

BAGIAN SAHAM: 3269

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 1200V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 120A, Tegangan - Maju (Vf) (Maks) @ If: 2.35V @ 120A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Global Power Technologies Group

GSXD060A008S1-D3

BAGIAN SAHAM: 3820

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 80V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 60A, Tegangan - Maju (Vf) (Maks) @ If: 840mV @ 60A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Global Power Technologies Group

GSXD160A008S1-D3

BAGIAN SAHAM: 2764

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 80V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 160A, Tegangan - Maju (Vf) (Maks) @ If: 840mV @ 160A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Global Power Technologies Group

GSXD080A004S1-D3

BAGIAN SAHAM: 4780

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 45V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 80A, Tegangan - Maju (Vf) (Maks) @ If: 700mV @ 80A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Global Power Technologies Group

GSXD100A015S1-D3

BAGIAN SAHAM: 3546

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 150V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 100A, Tegangan - Maju (Vf) (Maks) @ If: 880mV @ 100A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Global Power Technologies Group

GSXD080A015S1-D3

BAGIAN SAHAM: 3626

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 150V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 80A, Tegangan - Maju (Vf) (Maks) @ If: 880mV @ 80A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Global Power Technologies Group

GSXD080A012S1-D3

BAGIAN SAHAM: 3740

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 120V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 80A, Tegangan - Maju (Vf) (Maks) @ If: 880mV @ 80A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Global Power Technologies Group

GP2D030A120U

BAGIAN SAHAM: 4458

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Silicon Carbide Schottky, Tegangan - DC Reverse (Vr) (Maks): 1200V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 50A (DC), Tegangan - Maju (Vf) (Maks) @ If: 1.8V @ 15A, Kecepatan: No Recovery Time > 500mA (Io),

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Global Power Technologies Group

GP2D060A120U

BAGIAN SAHAM: 2940

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Silicon Carbide Schottky, Tegangan - DC Reverse (Vr) (Maks): 1200V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 94A (DC), Tegangan - Maju (Vf) (Maks) @ If: 1.8V @ 30A, Kecepatan: No Recovery Time > 500mA (Io),

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Global Power Technologies Group

GDP30D120B

BAGIAN SAHAM: 4177

Konfigurasi Dioda: 1 Pair Common Anode, Tipe Dioda: Silicon Carbide Schottky, Tegangan - DC Reverse (Vr) (Maks): 1200V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 15A (DC), Tegangan - Maju (Vf) (Maks) @ If: 1.7V @ 15A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Global Power Technologies Group

GP2D020A065U

BAGIAN SAHAM: 12168

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Silicon Carbide Schottky, Tegangan - DC Reverse (Vr) (Maks): 650V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 30A (DC), Tegangan - Maju (Vf) (Maks) @ If: 1.65V @ 10A, Kecepatan: No Recovery Time > 500mA (Io),

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Global Power Technologies Group

GDP24D060B

BAGIAN SAHAM: 4184

Konfigurasi Dioda: 1 Pair Common Anode, Tipe Dioda: Silicon Carbide Schottky, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 12A (DC), Tegangan - Maju (Vf) (Maks) @ If: 1.7V @ 12A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Global Power Technologies Group

GP2D020A120U

BAGIAN SAHAM: 7944

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Silicon Carbide Schottky, Tegangan - DC Reverse (Vr) (Maks): 1200V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 33A (DC), Tegangan - Maju (Vf) (Maks) @ If: 1.8V @ 10A, Kecepatan: No Recovery Time > 500mA (Io),

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Global Power Technologies Group

GDP60D120B

BAGIAN SAHAM: 4163

Konfigurasi Dioda: 1 Pair Common Anode, Tipe Dioda: Silicon Carbide Schottky, Tegangan - DC Reverse (Vr) (Maks): 1200V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 30A, Tegangan - Maju (Vf) (Maks) @ If: 1.7V @ 30A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Global Power Technologies Group

GP2D010A120U

BAGIAN SAHAM: 15850

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Silicon Carbide Schottky, Tegangan - DC Reverse (Vr) (Maks): 1200V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 17A (DC), Tegangan - Maju (Vf) (Maks) @ If: 1.8V @ 5A, Kecepatan: No Recovery Time > 500mA (Io),

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Global Power Technologies Group

GDP60Y120B

BAGIAN SAHAM: 4230

Konfigurasi Dioda: 1 Pair Common Anode, Tipe Dioda: Silicon Carbide Schottky, Tegangan - DC Reverse (Vr) (Maks): 1200V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 30A, Tegangan - Maju (Vf) (Maks) @ If: 1.7V @ 30A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Global Power Technologies Group

GP2D040A120U

BAGIAN SAHAM: 4340

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Silicon Carbide Schottky, Tegangan - DC Reverse (Vr) (Maks): 1200V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 65A (DC), Tegangan - Maju (Vf) (Maks) @ If: 1.8V @ 20A, Kecepatan: No Recovery Time > 500mA (Io),

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Global Power Technologies Group

GDP48Y060B

BAGIAN SAHAM: 4217

Konfigurasi Dioda: 1 Pair Common Anode, Tipe Dioda: Silicon Carbide Schottky, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 24A (DC), Tegangan - Maju (Vf) (Maks) @ If: 1.7V @ 24A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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