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Dioda - Penyearah - Array

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  • Dioda - Penyearah - Array
GSXD030A006S1-D3
Global Power Technologies Group

GSXD030A006S1-D3

BAGIAN SAHAM: 5311

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 60V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 30A, Tegangan - Maju (Vf) (Maks) @ If: 750mV @ 30A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GHXS050A060S-D4
Global Power Technologies Group

GHXS050A060S-D4

BAGIAN SAHAM: 1422

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Silicon Carbide Schottky, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 50A, Tegangan - Maju (Vf) (Maks) @ If: 1.8V @ 50A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GHXS060A120S-D4
Global Power Technologies Group

GHXS060A120S-D4

BAGIAN SAHAM: 657

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Silicon Carbide Schottky, Tegangan - DC Reverse (Vr) (Maks): 1200V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 60A, Tegangan - Maju (Vf) (Maks) @ If: 1.7V @ 60A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GSXF030A120S1-D3
Global Power Technologies Group

GSXF030A120S1-D3

BAGIAN SAHAM: 5408

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 1200V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 30A, Tegangan - Maju (Vf) (Maks) @ If: 2.35V @ 30A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GSXF060A020S1-D3
Global Power Technologies Group

GSXF060A020S1-D3

BAGIAN SAHAM: 3794

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 60A, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 60A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GHXS020A060S-D4
Global Power Technologies Group

GHXS020A060S-D4

BAGIAN SAHAM: 1996

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Silicon Carbide Schottky, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 20A, Tegangan - Maju (Vf) (Maks) @ If: 1.7V @ 20A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GP2D020A060U
Global Power Technologies Group

GP2D020A060U

BAGIAN SAHAM: 12784

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Silicon Carbide Schottky, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 30A (DC), Tegangan - Maju (Vf) (Maks) @ If: 1.65V @ 10A, Kecepatan: No Recovery Time > 500mA (Io),

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GSXD120A012S1-D3
Global Power Technologies Group

GSXD120A012S1-D3

BAGIAN SAHAM: 4555

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 120V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 120A, Tegangan - Maju (Vf) (Maks) @ If: 880mV @ 120A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GHXS030A120S-D4
Global Power Technologies Group

GHXS030A120S-D4

BAGIAN SAHAM: 1197

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Silicon Carbide Schottky, Tegangan - DC Reverse (Vr) (Maks): 1200V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 30A, Tegangan - Maju (Vf) (Maks) @ If: 1.7V @ 30A, Kecepatan: No Recovery Time > 500mA (Io),

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GHXS015A120S-D3
Global Power Technologies Group

GHXS015A120S-D3

BAGIAN SAHAM: 1918

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Silicon Carbide Schottky, Tegangan - DC Reverse (Vr) (Maks): 1200V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 15A, Tegangan - Maju (Vf) (Maks) @ If: 1.7V @ 15A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GHXS030A060S-D3
Global Power Technologies Group

GHXS030A060S-D3

BAGIAN SAHAM: 1932

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Silicon Carbide Schottky, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 30A, Tegangan - Maju (Vf) (Maks) @ If: 1.7V @ 3A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GHXS045A120S-D3
Global Power Technologies Group

GHXS045A120S-D3

BAGIAN SAHAM: 907

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Silicon Carbide Schottky, Tegangan - DC Reverse (Vr) (Maks): 1200V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 45A, Tegangan - Maju (Vf) (Maks) @ If: 1.7V @ 45A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GSXF060A060S1-D3
Global Power Technologies Group

GSXF060A060S1-D3

BAGIAN SAHAM: 5768

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 60A, Tegangan - Maju (Vf) (Maks) @ If: 1.5V @ 60A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GHXS010A060S-D3
Global Power Technologies Group

GHXS010A060S-D3

BAGIAN SAHAM: 3747

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Silicon Carbide Schottky, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 10A, Tegangan - Maju (Vf) (Maks) @ If: 1.7V @ 10A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GSXF030A040S1-D3
Global Power Technologies Group

GSXF030A040S1-D3

BAGIAN SAHAM: 6069

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 30A, Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 30A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GP2D024A060U
Global Power Technologies Group

GP2D024A060U

BAGIAN SAHAM: 21283

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Silicon Carbide Schottky, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 36A (DC), Tegangan - Maju (Vf) (Maks) @ If: 1.65V @ 12A, Kecepatan: No Recovery Time > 500mA (Io),

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GHXS045A120S-D4
Global Power Technologies Group

GHXS045A120S-D4

BAGIAN SAHAM: 845

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Silicon Carbide Schottky, Tegangan - DC Reverse (Vr) (Maks): 1200V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 45A, Tegangan - Maju (Vf) (Maks) @ If: 1.7V @ 45A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GSXF030A060S1-D3
Global Power Technologies Group

GSXF030A060S1-D3

BAGIAN SAHAM: 5945

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 30A, Tegangan - Maju (Vf) (Maks) @ If: 1.5V @ 30A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GHXS010A060S-D4
Global Power Technologies Group

GHXS010A060S-D4

BAGIAN SAHAM: 3727

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Silicon Carbide Schottky, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 10A, Tegangan - Maju (Vf) (Maks) @ If: 1.7V @ 10A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GP2D016A120U
Global Power Technologies Group

GP2D016A120U

BAGIAN SAHAM: 17930

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Silicon Carbide Schottky, Tegangan - DC Reverse (Vr) (Maks): 1200V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 24A (DC), Tegangan - Maju (Vf) (Maks) @ If: 1.8V @ 8A, Kecepatan: No Recovery Time > 500mA (Io),

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GSXF120A060S1-D3
Global Power Technologies Group

GSXF120A060S1-D3

BAGIAN SAHAM: 3644

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 120A, Tegangan - Maju (Vf) (Maks) @ If: 1.5V @ 120A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GHXS030A060S-D4
Global Power Technologies Group

GHXS030A060S-D4

BAGIAN SAHAM: 1867

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Silicon Carbide Schottky, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 30A, Tegangan - Maju (Vf) (Maks) @ If: 1.7V @ 30A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GSXD030A008S1-D3
Global Power Technologies Group

GSXD030A008S1-D3

BAGIAN SAHAM: 5284

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 80V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 30A, Tegangan - Maju (Vf) (Maks) @ If: 840mV @ 30A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GHXS060A120S-D3
Global Power Technologies Group

GHXS060A120S-D3

BAGIAN SAHAM: 732

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Silicon Carbide Schottky, Tegangan - DC Reverse (Vr) (Maks): 1200V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 60A, Tegangan - Maju (Vf) (Maks) @ If: 1.7V @ 60A, Kecepatan: No Recovery Time > 500mA (Io),

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GHXS050A060S-D3
Global Power Technologies Group

GHXS050A060S-D3

BAGIAN SAHAM: 1404

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Silicon Carbide Schottky, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 50A, Tegangan - Maju (Vf) (Maks) @ If: 1.8V @ 50A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GSXD030A004S1-D3
Global Power Technologies Group

GSXD030A004S1-D3

BAGIAN SAHAM: 5375

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 45V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 30A, Tegangan - Maju (Vf) (Maks) @ If: 700mV @ 30A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GSXD120A015S1-D3
Global Power Technologies Group

GSXD120A015S1-D3

BAGIAN SAHAM: 3628

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 150V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 120A, Tegangan - Maju (Vf) (Maks) @ If: 880mV @ 120A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GSXF100A020S1-D3
Global Power Technologies Group

GSXF100A020S1-D3

BAGIAN SAHAM: 3464

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 120A, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 100A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GSXF100A120S1-D3
Global Power Technologies Group

GSXF100A120S1-D3

BAGIAN SAHAM: 3311

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 1200V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 100A, Tegangan - Maju (Vf) (Maks) @ If: 2.35V @ 100A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GSXD120A008S1-D3
Global Power Technologies Group

GSXD120A008S1-D3

BAGIAN SAHAM: 3421

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 80V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 120A, Tegangan - Maju (Vf) (Maks) @ If: 840mV @ 120A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GSXF060A040S1-D3
Global Power Technologies Group

GSXF060A040S1-D3

BAGIAN SAHAM: 4597

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 60A, Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 60A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GSXD100A006S1-D3
Global Power Technologies Group

GSXD100A006S1-D3

BAGIAN SAHAM: 3452

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 60V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 100A, Tegangan - Maju (Vf) (Maks) @ If: 750mV @ 100A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GSXD120A010S1-D3
Global Power Technologies Group

GSXD120A010S1-D3

BAGIAN SAHAM: 3711

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 120A, Tegangan - Maju (Vf) (Maks) @ If: 840mV @ 120A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GSXD050A008S1-D3
Global Power Technologies Group

GSXD050A008S1-D3

BAGIAN SAHAM: 4339

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 80V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 50A, Tegangan - Maju (Vf) (Maks) @ If: 840mV @ 50A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GSXF060A100S1-D3
Global Power Technologies Group

GSXF060A100S1-D3

BAGIAN SAHAM: 4206

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 1000V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 60A, Tegangan - Maju (Vf) (Maks) @ If: 2.35V @ 60A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GSXD080A008S1-D3
Global Power Technologies Group

GSXD080A008S1-D3

BAGIAN SAHAM: 3852

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 80V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 80A, Tegangan - Maju (Vf) (Maks) @ If: 840mV @ 80A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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