Dioda - Penyearah - Array | Produk Semikonduktor Diskrit | 3

GSXD060A006S1-D3

BAGIAN SAHAM: 3906

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 60V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 60A, Tegangan - Maju (Vf) (Maks) @ If: 750mV @ 60A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Global Power Technologies Group

GSXD120A020S1-D3

BAGIAN SAHAM: 3353

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 120A, Tegangan - Maju (Vf) (Maks) @ If: 920mV @ 120A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Global Power Technologies Group

GSXD060A004S1-D3

BAGIAN SAHAM: 4770

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 45V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 60A, Tegangan - Maju (Vf) (Maks) @ If: 700mV @ 60A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Global Power Technologies Group

GHXS020A060S-D3

BAGIAN SAHAM: 2086

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Silicon Carbide Schottky, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 20A, Tegangan - Maju (Vf) (Maks) @ If: 1.7V @ 20A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Global Power Technologies Group

GSXD100A020S1-D3

BAGIAN SAHAM: 3234

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 100A, Tegangan - Maju (Vf) (Maks) @ If: 920mV @ 100A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Global Power Technologies Group

GSXD060A020S1-D3

BAGIAN SAHAM: 3381

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 60A, Tegangan - Maju (Vf) (Maks) @ If: 920mV @ 60A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Global Power Technologies Group

GSXD050A004S1-D3

BAGIAN SAHAM: 4472

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 45V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 50A, Tegangan - Maju (Vf) (Maks) @ If: 700mV @ 50A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Global Power Technologies Group

GSXD160A020S1-D3

BAGIAN SAHAM: 2564

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 160A, Tegangan - Maju (Vf) (Maks) @ If: 920mV @ 160A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Global Power Technologies Group

GSXD050A010S1-D3

BAGIAN SAHAM: 4264

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 50A, Tegangan - Maju (Vf) (Maks) @ If: 840mV @ 50A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Global Power Technologies Group

GSXF100A060S1-D3

BAGIAN SAHAM: 3401

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 100A, Tegangan - Maju (Vf) (Maks) @ If: 1.5V @ 100A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Global Power Technologies Group

GSXD080A020S1-D3

BAGIAN SAHAM: 3480

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 80A, Tegangan - Maju (Vf) (Maks) @ If: 920mV @ 80A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Global Power Technologies Group

GSXD050A006S1-D3

BAGIAN SAHAM: 4403

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 60V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 50A, Tegangan - Maju (Vf) (Maks) @ If: 750mV @ 50A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Global Power Technologies Group

GSXF100A040S1-D3

BAGIAN SAHAM: 3366

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 100A, Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 100A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Global Power Technologies Group

GSXD100A008S1-D3

BAGIAN SAHAM: 3637

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 80V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 100A, Tegangan - Maju (Vf) (Maks) @ If: 840mV @ 100A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Global Power Technologies Group

GSXF030A100S1-D3

BAGIAN SAHAM: 4593

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 1000V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 30A, Tegangan - Maju (Vf) (Maks) @ If: 2.35V @ 30A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Global Power Technologies Group

GSXD120A006S1-D3

BAGIAN SAHAM: 3548

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 60V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 120A, Tegangan - Maju (Vf) (Maks) @ If: 750mV @ 120A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Global Power Technologies Group

GSXD100A010S1-D3

BAGIAN SAHAM: 3649

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 100A, Tegangan - Maju (Vf) (Maks) @ If: 840mV @ 100A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Global Power Technologies Group

GSXF120A100S1-D3

BAGIAN SAHAM: 3351

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 1000V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 120A, Tegangan - Maju (Vf) (Maks) @ If: 2.35V @ 120A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Global Power Technologies Group

GHXS030A120S-D3

BAGIAN SAHAM: 1125

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Silicon Carbide Schottky, Tegangan - DC Reverse (Vr) (Maks): 1200V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 30A, Tegangan - Maju (Vf) (Maks) @ If: 1.7V @ 30A, Kecepatan: No Recovery Time > 500mA (Io),

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Global Power Technologies Group

GSXD030A010S1-D3

BAGIAN SAHAM: 5259

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 30A, Tegangan - Maju (Vf) (Maks) @ If: 840mV @ 30A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Global Power Technologies Group

GSXD080A006S1-D3

BAGIAN SAHAM: 3916

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 60V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 80A, Tegangan - Maju (Vf) (Maks) @ If: 750mV @ 80A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Global Power Technologies Group

GSXD120A018S1-D3

BAGIAN SAHAM: 3499

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 180V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 120A, Tegangan - Maju (Vf) (Maks) @ If: 920mV @ 120A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Global Power Technologies Group

GSXD060A012S1-D3

BAGIAN SAHAM: 3656

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 120V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 60A, Tegangan - Maju (Vf) (Maks) @ If: 880mV @ 60A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Global Power Technologies Group

GSXD080A018S1-D3

BAGIAN SAHAM: 3569

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 180V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 80A, Tegangan - Maju (Vf) (Maks) @ If: 920mV @ 80A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Global Power Technologies Group

GSXD050A020S1-D3

BAGIAN SAHAM: 3837

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 50A, Tegangan - Maju (Vf) (Maks) @ If: 920mV @ 50A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Global Power Technologies Group

GSXD160A018S1-D3

BAGIAN SAHAM: 2523

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 180V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 160A, Tegangan - Maju (Vf) (Maks) @ If: 920mV @ 160A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Global Power Technologies Group

GSXD160A012S1-D3

BAGIAN SAHAM: 2661

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 120V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 160A, Tegangan - Maju (Vf) (Maks) @ If: 880mV @ 160A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Global Power Technologies Group

GSXD160A010S1-D3

BAGIAN SAHAM: 2749

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 160A, Tegangan - Maju (Vf) (Maks) @ If: 840mV @ 160A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Global Power Technologies Group

GSXD060A015S1-D3

BAGIAN SAHAM: 3529

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 150V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 60A, Tegangan - Maju (Vf) (Maks) @ If: 880mV @ 60A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Global Power Technologies Group

GSXD050A018S1-D3

BAGIAN SAHAM: 3985

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 180V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 50A, Tegangan - Maju (Vf) (Maks) @ If: 920mV @ 50A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Global Power Technologies Group

GHXS015A120S-D4

BAGIAN SAHAM: 1973

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Silicon Carbide Schottky, Tegangan - DC Reverse (Vr) (Maks): 1200V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 15A, Tegangan - Maju (Vf) (Maks) @ If: 1.7V @ 15A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Global Power Technologies Group

GSXF120A020S1-D3

BAGIAN SAHAM: 3421

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 120A, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 120A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Global Power Technologies Group

GSXF120A040S1-D3

BAGIAN SAHAM: 3601

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 120A, Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 120A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Global Power Technologies Group

GSXD050A012S1-D3

BAGIAN SAHAM: 4093

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 120V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 50A, Tegangan - Maju (Vf) (Maks) @ If: 880mV @ 50A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Global Power Technologies Group

GSXD100A004S1-D3

BAGIAN SAHAM: 3380

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 45V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 100A, Tegangan - Maju (Vf) (Maks) @ If: 700mV @ 100A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Global Power Technologies Group

GSXD080A010S1-D3

BAGIAN SAHAM: 3765

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 160A, Tegangan - Maju (Vf) (Maks) @ If: 840mV @ 80A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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