| Tipe | Deskripsi |
| Status Bagian | Active |
|---|---|
| Tipe FET | 3 N-Channel (Half Bridge + Synchronous Bootstrap) |
| Fitur FET | GaNFET (Gallium Nitride) |
| Tiriskan ke Tegangan Sumber (Vdss) | 100V |
| Arus - Pembuangan Kontinu (Id) @ 25°C | 1.7A, 500mA |
| Rds Aktif (Maks) @ Id, Vgs | 320 mOhm @ 2A, 5V, 3.3 Ohm @ 2A, 5V |
| Vgs(th) (Maks) @ Id | 2.5V @ 100µA, 2.5V @ 20µA |
| Biaya Gerbang (Qg) (Maks) @ Vgs | 0.16nC @ 5V, 0.044nC @ 5V |
| Kapasitansi Input (Ciss) (Maks) @ Vds | 16pF @ 50V, 7pF @ 50V |
| Daya - Maks | - |
| Suhu Operasional | -40°C ~ 150°C (TJ) |
| Jenis pemasangan: | Surface Mount |
| Paket / Kasus | 9-VFBGA |
| Paket Perangkat Pemasok | 9-BGA (1.35x1.35) |
| ROHS Status | Compliant RoHS. |
|---|---|
| Tingkat sensitivitas kelembaban (MSL) | Tak dapat diterapkan |
| Status siklus hidup | Usang / Akhir Kehidupan |
| Stok kategori. | Stok tersedia |
