| Tipe | Deskripsi |
| Status Bagian | Active |
|---|---|
| Tipe FET | 2 N-Channel (Half Bridge) |
| Fitur FET | GaNFET (Gallium Nitride) |
| Tiriskan ke Tegangan Sumber (Vdss) | 80V |
| Arus - Pembuangan Kontinu (Id) @ 25°C | 9.5A, 38A |
| Rds Aktif (Maks) @ Id, Vgs | 14.5 mOhm @ 20A, 5V, 3.4 mOhm @ 20A, 5V |
| Vgs(th) (Maks) @ Id | 2.5V @ 2.5mA, 2.5V @ 10mA |
| Biaya Gerbang (Qg) (Maks) @ Vgs | 2.5nC @ 5V, 10nC @ 5V |
| Kapasitansi Input (Ciss) (Maks) @ Vds | 300pF @ 40V, 1100pF @ 40V |
| Daya - Maks | - |
| Suhu Operasional | -40°C ~ 150°C (TJ) |
| Jenis pemasangan: | Surface Mount |
| Paket / Kasus | Die |
| Paket Perangkat Pemasok | Die |
| ROHS Status | Compliant RoHS. |
|---|---|
| Tingkat sensitivitas kelembaban (MSL) | Tak dapat diterapkan |
| Status siklus hidup | Usang / Akhir Kehidupan |
| Stok kategori. | Stok tersedia |
