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Transistor - FET, MOSFET - Array

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  • Transistor - FET, MOSFET - Array
CAS300M17BM2
Cree/Wolfspeed

CAS300M17BM2

BAGIAN SAHAM: 115

Tipe FET: 2 N-Channel (Half Bridge), Fitur FET: Silicon Carbide (SiC), Tiriskan ke Tegangan Sumber (Vdss): 1700V (1.7kV), Arus - Pembuangan Kontinu (Id) @ 25°C: 325A (Tc), Rds Aktif (Maks) @ Id, Vgs: 10 mOhm @ 225A, 20V, Vgs(th) (Maks) @ Id: 2.3V @ 15mA (Typ),

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CAS300M12BM2
Cree/Wolfspeed

CAS300M12BM2

BAGIAN SAHAM: 138

Tipe FET: 2 N-Channel (Half Bridge), Fitur FET: Silicon Carbide (SiC), Tiriskan ke Tegangan Sumber (Vdss): 1200V (1.2kV), Arus - Pembuangan Kontinu (Id) @ 25°C: 423A (Tc), Rds Aktif (Maks) @ Id, Vgs: 5.7 mOhm @ 300A, 20V, Vgs(th) (Maks) @ Id: 2.3V @ 15mA (Typ),

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CCS050M12CM2
Cree/Wolfspeed

CCS050M12CM2

BAGIAN SAHAM: 184

Tipe FET: 6 N-Channel (3-Phase Bridge), Fitur FET: Silicon Carbide (SiC), Tiriskan ke Tegangan Sumber (Vdss): 1200V (1.2kV), Arus - Pembuangan Kontinu (Id) @ 25°C: 87A (Tc), Rds Aktif (Maks) @ Id, Vgs: 34 mOhm @ 50A, 20V, Vgs(th) (Maks) @ Id: 2.3V @ 2.5mA,

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CCS020M12CM2
Cree/Wolfspeed

CCS020M12CM2

BAGIAN SAHAM: 413

Tipe FET: 6 N-Channel (3-Phase Bridge), Fitur FET: Silicon Carbide (SiC), Tiriskan ke Tegangan Sumber (Vdss): 1200V (1.2kV), Arus - Pembuangan Kontinu (Id) @ 25°C: 29.5A (Tc), Rds Aktif (Maks) @ Id, Vgs: 98 mOhm @ 20A, 20V, Vgs(th) (Maks) @ Id: 2.2V @ 1mA (Typ),

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CAS120M12BM2
Cree/Wolfspeed

CAS120M12BM2

BAGIAN SAHAM: 257

Tipe FET: 2 N-Channel (Half Bridge), Fitur FET: Silicon Carbide (SiC), Tiriskan ke Tegangan Sumber (Vdss): 1200V (1.2kV), Arus - Pembuangan Kontinu (Id) @ 25°C: 193A (Tc), Rds Aktif (Maks) @ Id, Vgs: 16 mOhm @ 120A, 20V, Vgs(th) (Maks) @ Id: 2.6V @ 6mA (Typ),

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CAS325M12HM2
Cree/Wolfspeed

CAS325M12HM2

BAGIAN SAHAM: 70

Tipe FET: 2 N-Channel (Half Bridge), Fitur FET: Silicon Carbide (SiC), Tiriskan ke Tegangan Sumber (Vdss): 1200V (1.2kV), Arus - Pembuangan Kontinu (Id) @ 25°C: 444A (Tc), Rds Aktif (Maks) @ Id, Vgs: 4.3 mOhm @ 400A, 20V, Vgs(th) (Maks) @ Id: 4V @ 105mA,

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CAS100H12AM1
Cree/Wolfspeed

CAS100H12AM1

BAGIAN SAHAM: 3335

Tipe FET: 2 N-Channel (Half Bridge), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 1200V (1.2kV), Arus - Pembuangan Kontinu (Id) @ 25°C: 168A, Rds Aktif (Maks) @ Id, Vgs: 20 mOhm @ 20A, 20V, Vgs(th) (Maks) @ Id: 3.1V @ 50mA,

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