Dioda - Penyearah - Tunggal | Produk Semikonduktor Diskrit | 100

1N5820HA0G

BAGIAN SAHAM: 88

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 20V, Arus - Rata-Rata Dikoreksi (Io): 3A, Tegangan - Maju (Vf) (Maks) @ If: 475mV @ 3A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

1T7G R0G

BAGIAN SAHAM: 94

Tipe Dioda: Standard, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 1A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

1N4933G A0G

BAGIAN SAHAM: 116

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 50V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.2V @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 200ns,

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Taiwan Semiconductor Corporation

1N4003G B0G

BAGIAN SAHAM: 128

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 1A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

1N4001GHR1G

BAGIAN SAHAM: 110

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 50V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 1A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

1T1G A1G

BAGIAN SAHAM: 118

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 50V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 1A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

1N5817 B0G

BAGIAN SAHAM: 166

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 20V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 450mV @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

1N4003G A0G

BAGIAN SAHAM: 146

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 1A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

1N5404GHB0G

BAGIAN SAHAM: 85

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-Rata Dikoreksi (Io): 3A, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 3A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

1N4935GHB0G

BAGIAN SAHAM: 164

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.2V @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 200ns,

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Taiwan Semiconductor Corporation

1N5406GHA0G

BAGIAN SAHAM: 131

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-Rata Dikoreksi (Io): 3A, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 3A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

1N4003GHA0G

BAGIAN SAHAM: 136

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 1A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

1N4933G B0G

BAGIAN SAHAM: 80

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 50V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.2V @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 200ns,

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Taiwan Semiconductor Corporation

1N4006G R1G

BAGIAN SAHAM: 126

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 800V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 1A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

1N5401GHA0G

BAGIAN SAHAM: 167

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-Rata Dikoreksi (Io): 3A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 3A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

1N5821HA0G

BAGIAN SAHAM: 155

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 30V, Arus - Rata-Rata Dikoreksi (Io): 3A, Tegangan - Maju (Vf) (Maks) @ If: 500mV @ 3A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

1N4933GHR1G

BAGIAN SAHAM: 125

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 50V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.2V @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 200ns,

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Taiwan Semiconductor Corporation

1N4007G R1G

BAGIAN SAHAM: 109

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 1000V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 1A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

1N5397G A0G

BAGIAN SAHAM: 162

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-Rata Dikoreksi (Io): 1.5A, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 1.5A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

1N4934GHA0G

BAGIAN SAHAM: 133

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.2V @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 200ns,

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Taiwan Semiconductor Corporation

1T2G A0G

BAGIAN SAHAM: 142

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 1A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

1T3G R0G

BAGIAN SAHAM: 80

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 1A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

1N4002G B0G

BAGIAN SAHAM: 160

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 1A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

1T6G R0G

BAGIAN SAHAM: 174

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 800V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 1A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

1N5407GHB0G

BAGIAN SAHAM: 140

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 800V, Arus - Rata-Rata Dikoreksi (Io): 3A, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 3A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

1N5819HB0G

BAGIAN SAHAM: 107

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 40V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 600mV @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

1N5392G A0G

BAGIAN SAHAM: 87

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-Rata Dikoreksi (Io): 1.5A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 1.5A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

1N5398G B0G

BAGIAN SAHAM: 133

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 800V, Arus - Rata-Rata Dikoreksi (Io): 1.5A, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 1.5A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

1N5399GHB0G

BAGIAN SAHAM: 114

Tipe Dioda: Standard, Arus - Rata-Rata Dikoreksi (Io): 1.5A, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 1.5A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

1N5398GHB0G

BAGIAN SAHAM: 162

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 800V, Arus - Rata-Rata Dikoreksi (Io): 1.5A, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 1.5A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

1N5397G B0G

BAGIAN SAHAM: 121

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-Rata Dikoreksi (Io): 1.5A, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 1.5A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

1N5398GHA0G

BAGIAN SAHAM: 140

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 800V, Arus - Rata-Rata Dikoreksi (Io): 1.5A, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 1.5A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

1N5397GHA0G

BAGIAN SAHAM: 109

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-Rata Dikoreksi (Io): 1.5A, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 1.5A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

1N5399G B0G

BAGIAN SAHAM: 131

Tipe Dioda: Standard, Arus - Rata-Rata Dikoreksi (Io): 1.5A, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 1.5A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

1N5398G A0G

BAGIAN SAHAM: 105

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 800V, Arus - Rata-Rata Dikoreksi (Io): 1.5A, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 1.5A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

1N5397GHB0G

BAGIAN SAHAM: 154

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-Rata Dikoreksi (Io): 1.5A, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 1.5A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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