Dioda - Penyearah - Tunggal | Produk Semikonduktor Diskrit | 100

1N4004GHA0G

BAGIAN SAHAM: 172

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 1A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

1N5819 R1G

BAGIAN SAHAM: 176

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 40V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 600mV @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

1N5400GHA0G

BAGIAN SAHAM: 105

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 50V, Arus - Rata-Rata Dikoreksi (Io): 3A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 3A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

1T1G A0G

BAGIAN SAHAM: 157

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 50V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 1A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

1N4933G R1G

BAGIAN SAHAM: 169

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 50V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.2V @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 200ns,

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Taiwan Semiconductor Corporation

1T1G R0G

BAGIAN SAHAM: 87

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 50V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 1A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

1N5819HR1G

BAGIAN SAHAM: 116

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 40V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 600mV @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

1N4006G A0G

BAGIAN SAHAM: 155

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 800V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 1A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

1N4001G A0G

BAGIAN SAHAM: 163

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 50V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 1A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

1N5818 B0G

BAGIAN SAHAM: 161

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 30V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 550mV @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

1N4006GHB0G

BAGIAN SAHAM: 173

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 800V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 1A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

1T2G R0G

BAGIAN SAHAM: 131

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 1A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

1N4004G A0G

BAGIAN SAHAM: 135

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 1A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

1N4001GHB0G

BAGIAN SAHAM: 85

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 50V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 1A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

1N4937GHR1G

BAGIAN SAHAM: 150

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.2V @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 200ns,

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Taiwan Semiconductor Corporation

1N4937G R1G

BAGIAN SAHAM: 172

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.2V @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 200ns,

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Taiwan Semiconductor Corporation

1N5822HB0G

BAGIAN SAHAM: 102

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 40V, Arus - Rata-Rata Dikoreksi (Io): 3A, Tegangan - Maju (Vf) (Maks) @ If: 525mV @ 3A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

1N4934G B0G

BAGIAN SAHAM: 84

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.2V @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 200ns,

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Taiwan Semiconductor Corporation

1N4003GHR1G

BAGIAN SAHAM: 114

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 1A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

1T5G A1G

BAGIAN SAHAM: 135

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 1A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

1N5817HA0G

BAGIAN SAHAM: 131

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 20V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 450mV @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

1N5408GHA0G

BAGIAN SAHAM: 111

Tipe Dioda: Standard, Arus - Rata-Rata Dikoreksi (Io): 3A, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 3A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

1N5401G B0G

BAGIAN SAHAM: 80

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-Rata Dikoreksi (Io): 3A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 3A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

1N5820HB0G

BAGIAN SAHAM: 95

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 20V, Arus - Rata-Rata Dikoreksi (Io): 3A, Tegangan - Maju (Vf) (Maks) @ If: 475mV @ 3A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

1N4005G R1G

BAGIAN SAHAM: 133

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 1A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

1N4935GHA0G

BAGIAN SAHAM: 107

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.2V @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 200ns,

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Taiwan Semiconductor Corporation

1N4936G R1G

BAGIAN SAHAM: 116

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.2V @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 200ns,

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Taiwan Semiconductor Corporation

1N4937G B0G

BAGIAN SAHAM: 80

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.2V @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 200ns,

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Taiwan Semiconductor Corporation

1N4007GHR1G

BAGIAN SAHAM: 159

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 1000V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 1A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

1N4937GHA0G

BAGIAN SAHAM: 131

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.2V @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 200ns,

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Taiwan Semiconductor Corporation

1N4933GHA0G

BAGIAN SAHAM: 103

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 50V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.2V @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 200ns,

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Taiwan Semiconductor Corporation

1T3G A1G

BAGIAN SAHAM: 173

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 1A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

1N4936G B0G

BAGIAN SAHAM: 108

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.2V @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 200ns,

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Taiwan Semiconductor Corporation

1N4934G A0G

BAGIAN SAHAM: 155

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.2V @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 200ns,

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Taiwan Semiconductor Corporation

1N5822HA0G

BAGIAN SAHAM: 138

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 40V, Arus - Rata-Rata Dikoreksi (Io): 3A, Tegangan - Maju (Vf) (Maks) @ If: 525mV @ 3A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

1T4G A0G

BAGIAN SAHAM: 128

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 1A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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