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Transistor - FET, MOSFET - Array

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  • Transistor - FET, MOSFET - Array
IRFHM8363TRPBF
Infineon Technologies

IRFHM8363TRPBF

BAGIAN SAHAM: 191314

Tipe FET: 2 N-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 30V, Arus - Pembuangan Kontinu (Id) @ 25°C: 11A, Rds Aktif (Maks) @ Id, Vgs: 14.9 mOhm @ 10A, 10V, Vgs(th) (Maks) @ Id: 2.35V @ 25µA,

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IPG20N04S4L11AATMA1
Infineon Technologies

IPG20N04S4L11AATMA1

BAGIAN SAHAM: 165940

Tipe FET: 2 N-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 40V, Arus - Pembuangan Kontinu (Id) @ 25°C: 20A, Rds Aktif (Maks) @ Id, Vgs: 11.6 mOhm @ 17A, 10V, Vgs(th) (Maks) @ Id: 2.2V @ 15µA,

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IPG20N06S4L11AATMA1
Infineon Technologies

IPG20N06S4L11AATMA1

BAGIAN SAHAM: 94288

Tipe FET: 2 N-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 60V, Arus - Pembuangan Kontinu (Id) @ 25°C: 20A, Rds Aktif (Maks) @ Id, Vgs: 11.2 mOhm @ 17A, 10V, Vgs(th) (Maks) @ Id: 2.2V @ 28µA,

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IRF7309TRPBF
Infineon Technologies

IRF7309TRPBF

BAGIAN SAHAM: 150382

Tipe FET: N and P-Channel, Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 30V, Arus - Pembuangan Kontinu (Id) @ 25°C: 4A, 3A, Rds Aktif (Maks) @ Id, Vgs: 50 mOhm @ 2.4A, 10V, Vgs(th) (Maks) @ Id: 1V @ 250µA,

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IPG20N04S408ATMA1
Infineon Technologies

IPG20N04S408ATMA1

BAGIAN SAHAM: 104533

Tipe FET: 2 N-Channel (Dual), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 40V, Arus - Pembuangan Kontinu (Id) @ 25°C: 20A, Rds Aktif (Maks) @ Id, Vgs: 7.6 mOhm @ 17A, 10V, Vgs(th) (Maks) @ Id: 4V @ 30µA,

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IPG20N10S4L35AATMA1
Infineon Technologies

IPG20N10S4L35AATMA1

BAGIAN SAHAM: 155833

Tipe FET: 2 N-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 100V, Arus - Pembuangan Kontinu (Id) @ 25°C: 20A, Rds Aktif (Maks) @ Id, Vgs: 35 mOhm @ 17A, 10V, Vgs(th) (Maks) @ Id: 2.1V @ 16µA,

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IPG20N04S412ATMA1
Infineon Technologies

IPG20N04S412ATMA1

BAGIAN SAHAM: 172931

Tipe FET: 2 N-Channel (Dual), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 40V, Arus - Pembuangan Kontinu (Id) @ 25°C: 20A, Rds Aktif (Maks) @ Id, Vgs: 12.2 mOhm @ 17A, 10V, Vgs(th) (Maks) @ Id: 4V @ 15µA,

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IPG20N10S436AATMA1
Infineon Technologies

IPG20N10S436AATMA1

BAGIAN SAHAM: 139478

Tipe FET: 2 N-Channel (Dual), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 100V, Arus - Pembuangan Kontinu (Id) @ 25°C: 20A, Rds Aktif (Maks) @ Id, Vgs: 36 mOhm @ 17A, 10V, Vgs(th) (Maks) @ Id: 3.5V @ 16µA,

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IRF7331TRPBF
Infineon Technologies

IRF7331TRPBF

BAGIAN SAHAM: 196280

Tipe FET: 2 N-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 20V, Arus - Pembuangan Kontinu (Id) @ 25°C: 7A, Rds Aktif (Maks) @ Id, Vgs: 30 mOhm @ 7A, 4.5V, Vgs(th) (Maks) @ Id: 1.2V @ 250µA,

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IRF7104TRPBF
Infineon Technologies

IRF7104TRPBF

BAGIAN SAHAM: 104561

Tipe FET: 2 P-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 20V, Arus - Pembuangan Kontinu (Id) @ 25°C: 2.3A, Rds Aktif (Maks) @ Id, Vgs: 250 mOhm @ 1A, 10V, Vgs(th) (Maks) @ Id: 3V @ 250µA,

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IRF7379TRPBF
Infineon Technologies

IRF7379TRPBF

BAGIAN SAHAM: 199093

Tipe FET: N and P-Channel, Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 30V, Arus - Pembuangan Kontinu (Id) @ 25°C: 5.8A, 4.3A, Rds Aktif (Maks) @ Id, Vgs: 45 mOhm @ 5.8A, 10V, Vgs(th) (Maks) @ Id: 1V @ 250µA,

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IPG20N10S4L22AATMA1
Infineon Technologies

IPG20N10S4L22AATMA1

BAGIAN SAHAM: 108999

Tipe FET: 2 N-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 100V, Arus - Pembuangan Kontinu (Id) @ 25°C: 20A, Rds Aktif (Maks) @ Id, Vgs: 22 mOhm @ 17A, 10V, Vgs(th) (Maks) @ Id: 2.1V @ 25µA,

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IRF6802SDTRPBF
Infineon Technologies

IRF6802SDTRPBF

BAGIAN SAHAM: 60962

Tipe FET: 2 N-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 25V, Arus - Pembuangan Kontinu (Id) @ 25°C: 16A, Rds Aktif (Maks) @ Id, Vgs: 4.2 mOhm @ 16A, 10V, Vgs(th) (Maks) @ Id: 2.1V @ 35µA,

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IPG20N06S4L26ATMA1
Infineon Technologies

IPG20N06S4L26ATMA1

BAGIAN SAHAM: 197280

Tipe FET: 2 N-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 60V, Arus - Pembuangan Kontinu (Id) @ 25°C: 20A, Rds Aktif (Maks) @ Id, Vgs: 26 mOhm @ 17A, 10V, Vgs(th) (Maks) @ Id: 2.2V @ 10µA,

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IRLHS6376TRPBF
Infineon Technologies

IRLHS6376TRPBF

BAGIAN SAHAM: 115333

Tipe FET: 2 N-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 30V, Arus - Pembuangan Kontinu (Id) @ 25°C: 3.6A, Rds Aktif (Maks) @ Id, Vgs: 63 mOhm @ 3.4A, 4.5V, Vgs(th) (Maks) @ Id: 1.1V @ 10µA,

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IRF7902TRPBF
Infineon Technologies

IRF7902TRPBF

BAGIAN SAHAM: 168640

Tipe FET: 2 N-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 30V, Arus - Pembuangan Kontinu (Id) @ 25°C: 6.4A, 9.7A, Rds Aktif (Maks) @ Id, Vgs: 22.6 mOhm @ 6.4A, 10V, Vgs(th) (Maks) @ Id: 2.25V @ 25µA,

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IRF7311TRPBF
Infineon Technologies

IRF7311TRPBF

BAGIAN SAHAM: 168715

Tipe FET: 2 N-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 20V, Arus - Pembuangan Kontinu (Id) @ 25°C: 6.6A, Rds Aktif (Maks) @ Id, Vgs: 29 mOhm @ 6A, 4.5V, Vgs(th) (Maks) @ Id: 700mV @ 250µA,

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IRF7316TRPBF
Infineon Technologies

IRF7316TRPBF

BAGIAN SAHAM: 172337

Tipe FET: 2 P-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 30V, Arus - Pembuangan Kontinu (Id) @ 25°C: 4.9A, Rds Aktif (Maks) @ Id, Vgs: 58 mOhm @ 4.9A, 10V, Vgs(th) (Maks) @ Id: 1V @ 250µA,

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IRF7904TRPBF
Infineon Technologies

IRF7904TRPBF

BAGIAN SAHAM: 188754

Tipe FET: 2 N-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 30V, Arus - Pembuangan Kontinu (Id) @ 25°C: 7.6A, 11A, Rds Aktif (Maks) @ Id, Vgs: 16.2 mOhm @ 7.6A, 10V, Vgs(th) (Maks) @ Id: 2.25V @ 25µA,

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IRF7303TRPBF
Infineon Technologies

IRF7303TRPBF

BAGIAN SAHAM: 185377

Tipe FET: 2 N-Channel (Dual), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 30V, Arus - Pembuangan Kontinu (Id) @ 25°C: 4.9A, Rds Aktif (Maks) @ Id, Vgs: 50 mOhm @ 2.4A, 10V, Vgs(th) (Maks) @ Id: 1V @ 250µA,

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IPG20N04S408AATMA1
Infineon Technologies

IPG20N04S408AATMA1

BAGIAN SAHAM: 101294

Tipe FET: 2 N-Channel (Dual), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 40V, Arus - Pembuangan Kontinu (Id) @ 25°C: 20A, Rds Aktif (Maks) @ Id, Vgs: 7.6 mOhm @ 17A, 10V, Vgs(th) (Maks) @ Id: 4V @ 30µA,

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IRF7342TRPBF
Infineon Technologies

IRF7342TRPBF

BAGIAN SAHAM: 156976

Tipe FET: 2 P-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 55V, Arus - Pembuangan Kontinu (Id) @ 25°C: 3.4A, Rds Aktif (Maks) @ Id, Vgs: 105 mOhm @ 3.4A, 10V, Vgs(th) (Maks) @ Id: 1V @ 250µA,

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IRF7105TRPBF
Infineon Technologies

IRF7105TRPBF

BAGIAN SAHAM: 196914

Tipe FET: N and P-Channel, Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 25V, Arus - Pembuangan Kontinu (Id) @ 25°C: 3.5A, 2.3A, Rds Aktif (Maks) @ Id, Vgs: 100 mOhm @ 1A, 10V, Vgs(th) (Maks) @ Id: 3V @ 250µA,

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IPG16N10S4L61AATMA1
Infineon Technologies

IPG16N10S4L61AATMA1

BAGIAN SAHAM: 195154

Tipe FET: 2 N-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 100V, Arus - Pembuangan Kontinu (Id) @ 25°C: 16A, Rds Aktif (Maks) @ Id, Vgs: 61 mOhm @ 16A, 10V, Vgs(th) (Maks) @ Id: 2.1V @ 90µA,

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IPG20N06S4L14ATMA2
Infineon Technologies

IPG20N06S4L14ATMA2

BAGIAN SAHAM: 126778

Tipe FET: 2 N-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 60V, Arus - Pembuangan Kontinu (Id) @ 25°C: 20A, Rds Aktif (Maks) @ Id, Vgs: 13.7 mOhm @ 17A, 10V, Vgs(th) (Maks) @ Id: 2.2V @ 20µA,

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IRF7304
Infineon Technologies

IRF7304

BAGIAN SAHAM: 40531

Tipe FET: 2 P-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 20V, Arus - Pembuangan Kontinu (Id) @ 25°C: 4.3A, Rds Aktif (Maks) @ Id, Vgs: 90 mOhm @ 2.2A, 4.5V, Vgs(th) (Maks) @ Id: 700mV @ 250µA,

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IRF8313TRPBF
Infineon Technologies

IRF8313TRPBF

BAGIAN SAHAM: 190133

Tipe FET: 2 N-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 30V, Arus - Pembuangan Kontinu (Id) @ 25°C: 9.7A, Rds Aktif (Maks) @ Id, Vgs: 15.5 mOhm @ 9.7A, 10V, Vgs(th) (Maks) @ Id: 2.35V @ 25µA,

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IRFH4251DTRPBF
Infineon Technologies

IRFH4251DTRPBF

BAGIAN SAHAM: 49673

Tipe FET: 2 N-Channel (Dual), Schottky, Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 25V, Arus - Pembuangan Kontinu (Id) @ 25°C: 64A, 188A, Rds Aktif (Maks) @ Id, Vgs: 3.2 mOhm @ 30A, 10V, Vgs(th) (Maks) @ Id: 2.1V @ 35µA,

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IPG20N06S4L11ATMA1
Infineon Technologies

IPG20N06S4L11ATMA1

BAGIAN SAHAM: 97219

Tipe FET: 2 N-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 60V, Arus - Pembuangan Kontinu (Id) @ 25°C: 20A, Rds Aktif (Maks) @ Id, Vgs: 11.2 mOhm @ 17A, 10V, Vgs(th) (Maks) @ Id: 2.2V @ 28µA,

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IRF7341TRPBF
Infineon Technologies

IRF7341TRPBF

BAGIAN SAHAM: 73259

Tipe FET: 2 N-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 55V, Arus - Pembuangan Kontinu (Id) @ 25°C: 4.7A, Rds Aktif (Maks) @ Id, Vgs: 50 mOhm @ 4.7A, 10V, Vgs(th) (Maks) @ Id: 1V @ 250µA,

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IRF7319TRPBF
Infineon Technologies

IRF7319TRPBF

BAGIAN SAHAM: 180145

Tipe FET: N and P-Channel, Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 30V, Rds Aktif (Maks) @ Id, Vgs: 29 mOhm @ 5.8A, 10V, Vgs(th) (Maks) @ Id: 1V @ 250µA,

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IRF7389TRPBF
Infineon Technologies

IRF7389TRPBF

BAGIAN SAHAM: 166810

Tipe FET: N and P-Channel, Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 30V, Rds Aktif (Maks) @ Id, Vgs: 29 mOhm @ 5.8A, 10V, Vgs(th) (Maks) @ Id: 1V @ 250µA,

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IRF7907TRPBF
Infineon Technologies

IRF7907TRPBF

BAGIAN SAHAM: 173843

Tipe FET: 2 N-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 30V, Arus - Pembuangan Kontinu (Id) @ 25°C: 9.1A, 11A, Rds Aktif (Maks) @ Id, Vgs: 16.4 mOhm @ 9.1A, 10V, Vgs(th) (Maks) @ Id: 2.35V @ 25µA,

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IRFHM792TRPBF
Infineon Technologies

IRFHM792TRPBF

BAGIAN SAHAM: 82378

Tipe FET: 2 N-Channel (Dual), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 100V, Arus - Pembuangan Kontinu (Id) @ 25°C: 2.3A, Rds Aktif (Maks) @ Id, Vgs: 195 mOhm @ 2.9A, 10V, Vgs(th) (Maks) @ Id: 4V @ 10µA,

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IRF7506TRPBF
Infineon Technologies

IRF7506TRPBF

BAGIAN SAHAM: 149700

Tipe FET: 2 P-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 30V, Arus - Pembuangan Kontinu (Id) @ 25°C: 1.7A, Rds Aktif (Maks) @ Id, Vgs: 270 mOhm @ 1.2A, 10V, Vgs(th) (Maks) @ Id: 1V @ 250µA,

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IRF9362TRPBF
Infineon Technologies

IRF9362TRPBF

BAGIAN SAHAM: 188725

Tipe FET: 2 P-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 30V, Arus - Pembuangan Kontinu (Id) @ 25°C: 8A, Rds Aktif (Maks) @ Id, Vgs: 21 mOhm @ 8A, 10V, Vgs(th) (Maks) @ Id: 2.4V @ 25µA,

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