Dioda - Penyearah - Tunggal | Produk Semikonduktor Diskrit | 21

1N3213R

BAGIAN SAHAM: 9594

Tipe Dioda: Standard, Reverse Polarity, Tegangan - DC Reverse (Vr) (Maks): 500V, Arus - Rata-Rata Dikoreksi (Io): 15A, Tegangan - Maju (Vf) (Maks) @ If: 1.5V @ 15A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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GeneSiC Semiconductor

1N5834R

BAGIAN SAHAM: 5649

Tipe Dioda: Schottky, Reverse Polarity, Tegangan - DC Reverse (Vr) (Maks): 40V, Arus - Rata-Rata Dikoreksi (Io): 40A, Tegangan - Maju (Vf) (Maks) @ If: 590mV @ 40A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

1N3297A

BAGIAN SAHAM: 3391

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 1400V, Arus - Rata-Rata Dikoreksi (Io): 100A, Tegangan - Maju (Vf) (Maks) @ If: 1.5V @ 100A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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GeneSiC Semiconductor

1N3768

BAGIAN SAHAM: 9899

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 1000V, Arus - Rata-Rata Dikoreksi (Io): 35A, Tegangan - Maju (Vf) (Maks) @ If: 1.2V @ 35A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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GeneSiC Semiconductor

1N3211R

BAGIAN SAHAM: 13605

Tipe Dioda: Standard, Reverse Polarity, Tegangan - DC Reverse (Vr) (Maks): 300V, Arus - Rata-Rata Dikoreksi (Io): 15A, Tegangan - Maju (Vf) (Maks) @ If: 1.5V @ 15A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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GeneSiC Semiconductor

1N1188AR

BAGIAN SAHAM: 14724

Tipe Dioda: Standard, Reverse Polarity, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-Rata Dikoreksi (Io): 40A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 40A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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GeneSiC Semiconductor

1N1186R

BAGIAN SAHAM: 14976

Tipe Dioda: Standard, Reverse Polarity, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-Rata Dikoreksi (Io): 35A, Tegangan - Maju (Vf) (Maks) @ If: 1.2V @ 35A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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GeneSiC Semiconductor

1N3293A

BAGIAN SAHAM: 3421

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-Rata Dikoreksi (Io): 100A, Tegangan - Maju (Vf) (Maks) @ If: 1.5V @ 100A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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GeneSiC Semiconductor

1N1187R

BAGIAN SAHAM: 11210

Tipe Dioda: Standard, Reverse Polarity, Tegangan - DC Reverse (Vr) (Maks): 300V, Arus - Rata-Rata Dikoreksi (Io): 35A, Tegangan - Maju (Vf) (Maks) @ If: 1.2V @ 35A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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GeneSiC Semiconductor

1N3766

BAGIAN SAHAM: 9596

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 800V, Arus - Rata-Rata Dikoreksi (Io): 35A, Tegangan - Maju (Vf) (Maks) @ If: 1.2V @ 35A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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GeneSiC Semiconductor

1N2133AR

BAGIAN SAHAM: 9580

Tipe Dioda: Standard, Reverse Polarity, Tegangan - DC Reverse (Vr) (Maks): 300V, Arus - Rata-Rata Dikoreksi (Io): 60A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 60A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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GeneSiC Semiconductor

1N3671AR

BAGIAN SAHAM: 14489

Tipe Dioda: Standard, Reverse Polarity, Tegangan - DC Reverse (Vr) (Maks): 800V, Arus - Rata-Rata Dikoreksi (Io): 12A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 12A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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GeneSiC Semiconductor

1N5832

BAGIAN SAHAM: 5575

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 20V, Arus - Rata-Rata Dikoreksi (Io): 40A, Tegangan - Maju (Vf) (Maks) @ If: 520mV @ 40A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

1N3208R

BAGIAN SAHAM: 15260

Tipe Dioda: Standard, Reverse Polarity, Tegangan - DC Reverse (Vr) (Maks): 50V, Arus - Rata-Rata Dikoreksi (Io): 15A, Tegangan - Maju (Vf) (Maks) @ If: 1.5V @ 15A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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GeneSiC Semiconductor

150K100A

BAGIAN SAHAM: 3461

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 1000V, Arus - Rata-Rata Dikoreksi (Io): 150A, Tegangan - Maju (Vf) (Maks) @ If: 1.33V @ 150A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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GeneSiC Semiconductor

1N1183R

BAGIAN SAHAM: 15035

Tipe Dioda: Standard, Reverse Polarity, Tegangan - DC Reverse (Vr) (Maks): 50V, Arus - Rata-Rata Dikoreksi (Io): 35A, Tegangan - Maju (Vf) (Maks) @ If: 1.2V @ 35A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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GeneSiC Semiconductor

1N1202AR

BAGIAN SAHAM: 15978

Tipe Dioda: Standard, Reverse Polarity, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-Rata Dikoreksi (Io): 12A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 12A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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GeneSiC Semiconductor

1N2133A

BAGIAN SAHAM: 9591

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 300V, Arus - Rata-Rata Dikoreksi (Io): 60A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 60A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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GeneSiC Semiconductor

1N5828

BAGIAN SAHAM: 5643

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 40V, Arus - Rata-Rata Dikoreksi (Io): 15A, Tegangan - Maju (Vf) (Maks) @ If: 500mV @ 15A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

1N4595

BAGIAN SAHAM: 3450

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 1200V, Arus - Rata-Rata Dikoreksi (Io): 150A, Tegangan - Maju (Vf) (Maks) @ If: 1.5V @ 150A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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GeneSiC Semiconductor

1N4592R

BAGIAN SAHAM: 3417

Tipe Dioda: Standard, Reverse Polarity, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-Rata Dikoreksi (Io): 150A, Tegangan - Maju (Vf) (Maks) @ If: 1.5V @ 150A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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GeneSiC Semiconductor

1N1190R

BAGIAN SAHAM: 16753

Tipe Dioda: Standard, Reverse Polarity, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-Rata Dikoreksi (Io): 35A, Tegangan - Maju (Vf) (Maks) @ If: 1.2V @ 35A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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GeneSiC Semiconductor

1N8030-GA

BAGIAN SAHAM: 464

Tipe Dioda: Silicon Carbide Schottky, Tegangan - DC Reverse (Vr) (Maks): 650V, Arus - Rata-Rata Dikoreksi (Io): 750mA, Tegangan - Maju (Vf) (Maks) @ If: 1.39V @ 750mA, Kecepatan: No Recovery Time > 500mA (Io), Waktu Pemulihan Terbalik (trr): 0ns,

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GeneSiC Semiconductor

1N8024-GA

BAGIAN SAHAM: 457

Tipe Dioda: Silicon Carbide Schottky, Tegangan - DC Reverse (Vr) (Maks): 1200V, Arus - Rata-Rata Dikoreksi (Io): 750mA, Tegangan - Maju (Vf) (Maks) @ If: 1.74V @ 750mA, Kecepatan: No Recovery Time > 500mA (Io), Waktu Pemulihan Terbalik (trr): 0ns,

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GeneSiC Semiconductor

1N6095R

BAGIAN SAHAM: 4316

Tipe Dioda: Schottky, Reverse Polarity, Tegangan - DC Reverse (Vr) (Maks): 30V, Arus - Rata-Rata Dikoreksi (Io): 25A, Tegangan - Maju (Vf) (Maks) @ If: 580mV @ 25A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

1N1184A

BAGIAN SAHAM: 11180

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-Rata Dikoreksi (Io): 40A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 40A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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GeneSiC Semiconductor

1N3673AR

BAGIAN SAHAM: 12882

Tipe Dioda: Standard, Reverse Polarity, Tegangan - DC Reverse (Vr) (Maks): 1000V, Arus - Rata-Rata Dikoreksi (Io): 12A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 12A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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GeneSiC Semiconductor

1N1186AR

BAGIAN SAHAM: 10488

Tipe Dioda: Standard, Reverse Polarity, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-Rata Dikoreksi (Io): 40A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 40A,

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GeneSiC Semiconductor

150KR60A

BAGIAN SAHAM: 2965

Tipe Dioda: Standard, Reverse Polarity, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-Rata Dikoreksi (Io): 150A, Tegangan - Maju (Vf) (Maks) @ If: 1.33V @ 150A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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GeneSiC Semiconductor

1N1206AR

BAGIAN SAHAM: 17397

Tipe Dioda: Standard, Reverse Polarity, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-Rata Dikoreksi (Io): 12A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 12A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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GeneSiC Semiconductor

1N1184

BAGIAN SAHAM: 7472

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-Rata Dikoreksi (Io): 35A, Tegangan - Maju (Vf) (Maks) @ If: 1.2V @ 35A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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GeneSiC Semiconductor

1N3210

BAGIAN SAHAM: 11001

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-Rata Dikoreksi (Io): 15A, Tegangan - Maju (Vf) (Maks) @ If: 1.5V @ 15A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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GeneSiC Semiconductor

1N3214

BAGIAN SAHAM: 12725

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-Rata Dikoreksi (Io): 15A, Tegangan - Maju (Vf) (Maks) @ If: 1.5V @ 15A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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GeneSiC Semiconductor

1N3891

BAGIAN SAHAM: 11106

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-Rata Dikoreksi (Io): 12A, Tegangan - Maju (Vf) (Maks) @ If: 1.4V @ 12A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 200ns,

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GeneSiC Semiconductor

1N4595R

BAGIAN SAHAM: 2917

Tipe Dioda: Standard, Reverse Polarity, Tegangan - DC Reverse (Vr) (Maks): 1200V, Arus - Rata-Rata Dikoreksi (Io): 150A, Tegangan - Maju (Vf) (Maks) @ If: 1.5V @ 150A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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GeneSiC Semiconductor

1N6098

BAGIAN SAHAM: 4336

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 40V, Arus - Rata-Rata Dikoreksi (Io): 50A, Tegangan - Maju (Vf) (Maks) @ If: 700mV @ 50A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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