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MR4A08BYS35R
Everspin Technologies Inc.

MR4A08BYS35R

BAGIAN SAHAM: 3120

Jenis Memori: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Ukuran memori: 16Mb (2M x 8), Tulis Waktu Siklus - Kata, Halaman: 35ns,

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MR2A08AMYS35
Everspin Technologies Inc.

MR2A08AMYS35

BAGIAN SAHAM: 3372

Jenis Memori: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Ukuran memori: 4Mb (512K x 8), Tulis Waktu Siklus - Kata, Halaman: 35ns,

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MR25H40CDC
Everspin Technologies Inc.

MR25H40CDC

BAGIAN SAHAM: 5195

Jenis Memori: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Ukuran memori: 4Mb (512K x 8), Frekuensi Jam: 40MHz,

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MR20H40CDF
Everspin Technologies Inc.

MR20H40CDF

BAGIAN SAHAM: 4347

Jenis Memori: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Ukuran memori: 4Mb (512K x 8), Frekuensi Jam: 50MHz,

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MR2A08ACYS35R
Everspin Technologies Inc.

MR2A08ACYS35R

BAGIAN SAHAM: 4312

Jenis Memori: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Ukuran memori: 4Mb (512K x 8), Tulis Waktu Siklus - Kata, Halaman: 35ns,

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MR2A16AYS35R
Everspin Technologies Inc.

MR2A16AYS35R

BAGIAN SAHAM: 4540

Jenis Memori: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Ukuran memori: 4Mb (256K x 16), Tulis Waktu Siklus - Kata, Halaman: 35ns,

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MR2A08AYS35R
Everspin Technologies Inc.

MR2A08AYS35R

BAGIAN SAHAM: 4595

Jenis Memori: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Ukuran memori: 4Mb (512K x 8), Tulis Waktu Siklus - Kata, Halaman: 35ns,

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MR2A16ACYS35R
Everspin Technologies Inc.

MR2A16ACYS35R

BAGIAN SAHAM: 4271

Jenis Memori: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Ukuran memori: 4Mb (256K x 16), Tulis Waktu Siklus - Kata, Halaman: 35ns,

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MR25H40CDF
Everspin Technologies Inc.

MR25H40CDF

BAGIAN SAHAM: 5178

Jenis Memori: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Ukuran memori: 4Mb (512K x 8), Frekuensi Jam: 40MHz,

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MR256A08BSO35R
Everspin Technologies Inc.

MR256A08BSO35R

BAGIAN SAHAM: 5055

Jenis Memori: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Ukuran memori: 256Kb (32K x 8), Tulis Waktu Siklus - Kata, Halaman: 35ns,

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MR20H40CDFR
Everspin Technologies Inc.

MR20H40CDFR

BAGIAN SAHAM: 6410

Jenis Memori: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Ukuran memori: 4Mb (512K x 8), Frekuensi Jam: 50MHz,

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MR0A16AVMA35R
Everspin Technologies Inc.

MR0A16AVMA35R

BAGIAN SAHAM: 7143

Jenis Memori: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Ukuran memori: 1Mb (64K x 16), Tulis Waktu Siklus - Kata, Halaman: 35ns,

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MR20H40DF
Everspin Technologies Inc.

MR20H40DF

BAGIAN SAHAM: 7092

Jenis Memori: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Ukuran memori: 4Mb (512K x 8), Frekuensi Jam: 50MHz,

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MR0A08BSO35
Everspin Technologies Inc.

MR0A08BSO35

BAGIAN SAHAM: 8800

Jenis Memori: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Ukuran memori: 1Mb (128K x 8), Tulis Waktu Siklus - Kata, Halaman: 35ns,

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MR20H40DFR
Everspin Technologies Inc.

MR20H40DFR

BAGIAN SAHAM: 7150

Jenis Memori: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Ukuran memori: 4Mb (512K x 8), Frekuensi Jam: 50MHz,

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MR0D08BMA45
Everspin Technologies Inc.

MR0D08BMA45

BAGIAN SAHAM: 6312

Jenis Memori: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Ukuran memori: 1Mb (128K x 8), Tulis Waktu Siklus - Kata, Halaman: 45ns,

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MR0A16AVMA35
Everspin Technologies Inc.

MR0A16AVMA35

BAGIAN SAHAM: 6821

Jenis Memori: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Ukuran memori: 1Mb (64K x 16), Tulis Waktu Siklus - Kata, Halaman: 35ns,

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MR0A16ACYS35
Everspin Technologies Inc.

MR0A16ACYS35

BAGIAN SAHAM: 5925

Jenis Memori: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Ukuran memori: 1Mb (64K x 16), Tulis Waktu Siklus - Kata, Halaman: 35ns,

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MR0A16ACMA35
Everspin Technologies Inc.

MR0A16ACMA35

BAGIAN SAHAM: 5961

Jenis Memori: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Ukuran memori: 1Mb (64K x 16), Tulis Waktu Siklus - Kata, Halaman: 35ns,

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MR0A16AMYS35R
Everspin Technologies Inc.

MR0A16AMYS35R

BAGIAN SAHAM: 5945

Jenis Memori: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Ukuran memori: 1Mb (64K x 16), Tulis Waktu Siklus - Kata, Halaman: 35ns,

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MR0A16AMYS35
Everspin Technologies Inc.

MR0A16AMYS35

BAGIAN SAHAM: 5660

Jenis Memori: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Ukuran memori: 1Mb (64K x 16), Tulis Waktu Siklus - Kata, Halaman: 35ns,

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MR25H40CDCR
Everspin Technologies Inc.

MR25H40CDCR

BAGIAN SAHAM: 7730

Jenis Memori: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Ukuran memori: 4Mb (512K x 8), Frekuensi Jam: 40MHz,

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MR0A16AYS35
Everspin Technologies Inc.

MR0A16AYS35

BAGIAN SAHAM: 6355

Jenis Memori: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Ukuran memori: 1Mb (64K x 16), Tulis Waktu Siklus - Kata, Halaman: 35ns,

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MR0D08BMA45R
Everspin Technologies Inc.

MR0D08BMA45R

BAGIAN SAHAM: 8875

Jenis Memori: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Ukuran memori: 1Mb (128K x 8), Tulis Waktu Siklus - Kata, Halaman: 45ns,

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MR0A08BCSO35R
Everspin Technologies Inc.

MR0A08BCSO35R

BAGIAN SAHAM: 3075

Jenis Memori: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Ukuran memori: 1Mb (128K x 8), Tulis Waktu Siklus - Kata, Halaman: 35ns,

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MR25H40CDFR
Everspin Technologies Inc.

MR25H40CDFR

BAGIAN SAHAM: 7694

Jenis Memori: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Ukuran memori: 4Mb (512K x 8), Frekuensi Jam: 40MHz,

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MR0A16ACMA35R
Everspin Technologies Inc.

MR0A16ACMA35R

BAGIAN SAHAM: 8325

Jenis Memori: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Ukuran memori: 1Mb (64K x 16), Tulis Waktu Siklus - Kata, Halaman: 35ns,

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MR0A08BCSO35
Everspin Technologies Inc.

MR0A08BCSO35

BAGIAN SAHAM: 3017

Jenis Memori: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Ukuran memori: 1Mb (128K x 8), Tulis Waktu Siklus - Kata, Halaman: 35ns,

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MR256A08BCSO35
Everspin Technologies Inc.

MR256A08BCSO35

BAGIAN SAHAM: 3064

Jenis Memori: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Ukuran memori: 256Kb (32K x 8), Tulis Waktu Siklus - Kata, Halaman: 35ns,

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MR0A08BYS35
Everspin Technologies Inc.

MR0A08BYS35

BAGIAN SAHAM: 6281

Jenis Memori: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Ukuran memori: 1Mb (128K x 8), Tulis Waktu Siklus - Kata, Halaman: 35ns,

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MR256A08BCSO35R
Everspin Technologies Inc.

MR256A08BCSO35R

BAGIAN SAHAM: 385

Jenis Memori: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Ukuran memori: 256Kb (32K x 8), Tulis Waktu Siklus - Kata, Halaman: 35ns,

Wishlist.
MR0A16AMA35R
Everspin Technologies Inc.

MR0A16AMA35R

BAGIAN SAHAM: 8881

Jenis Memori: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Ukuran memori: 1Mb (64K x 16), Tulis Waktu Siklus - Kata, Halaman: 35ns,

Wishlist.
MR0A08BSO35R
Everspin Technologies Inc.

MR0A08BSO35R

BAGIAN SAHAM: 8910

Jenis Memori: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Ukuran memori: 1Mb (128K x 8), Tulis Waktu Siklus - Kata, Halaman: 35ns,

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MR0DL08BMA45R
Everspin Technologies Inc.

MR0DL08BMA45R

BAGIAN SAHAM: 8487

Jenis Memori: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Ukuran memori: 1Mb (128K x 8), Tulis Waktu Siklus - Kata, Halaman: 45ns,

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MR256A08BSO35
Everspin Technologies Inc.

MR256A08BSO35

BAGIAN SAHAM: 8920

Jenis Memori: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Ukuran memori: 256Kb (32K x 8), Tulis Waktu Siklus - Kata, Halaman: 35ns,

Wishlist.
MR0A16AVYS35R
Everspin Technologies Inc.

MR0A16AVYS35R

BAGIAN SAHAM: 7108

Jenis Memori: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Ukuran memori: 1Mb (64K x 16), Tulis Waktu Siklus - Kata, Halaman: 35ns,

Wishlist.