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MR4A08BCMA35
Everspin Technologies Inc.

MR4A08BCMA35

BAGIAN SAHAM: 2109

Jenis Memori: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Ukuran memori: 16Mb (2M x 8), Tulis Waktu Siklus - Kata, Halaman: 35ns,

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MR4A08BMA35
Everspin Technologies Inc.

MR4A08BMA35

BAGIAN SAHAM: 2272

Jenis Memori: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Ukuran memori: 16Mb (2M x 8), Tulis Waktu Siklus - Kata, Halaman: 35ns,

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MR4A16BCMA35R
Everspin Technologies Inc.

MR4A16BCMA35R

BAGIAN SAHAM: 2946

Jenis Memori: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Ukuran memori: 16Mb (1M x 16), Tulis Waktu Siklus - Kata, Halaman: 35ns,

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MR4A08BCYS35
Everspin Technologies Inc.

MR4A08BCYS35

BAGIAN SAHAM: 2131

Jenis Memori: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Ukuran memori: 16Mb (2M x 8), Tulis Waktu Siklus - Kata, Halaman: 35ns,

Wishlist.
MR4A16BCYS35
Everspin Technologies Inc.

MR4A16BCYS35

BAGIAN SAHAM: 2120

Jenis Memori: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Ukuran memori: 16Mb (1M x 16), Tulis Waktu Siklus - Kata, Halaman: 35ns,

Wishlist.
MR4A16BCMA35
Everspin Technologies Inc.

MR4A16BCMA35

BAGIAN SAHAM: 2128

Jenis Memori: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Ukuran memori: 16Mb (1M x 16), Tulis Waktu Siklus - Kata, Halaman: 35ns,

Wishlist.
MR4A16BMA35
Everspin Technologies Inc.

MR4A16BMA35

BAGIAN SAHAM: 2205

Jenis Memori: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Ukuran memori: 16Mb (1M x 16), Tulis Waktu Siklus - Kata, Halaman: 35ns,

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MR4A16BCYS35R
Everspin Technologies Inc.

MR4A16BCYS35R

BAGIAN SAHAM: 2969

Jenis Memori: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Ukuran memori: 16Mb (1M x 16), Tulis Waktu Siklus - Kata, Halaman: 35ns,

Wishlist.
MR4A16BMA35R
Everspin Technologies Inc.

MR4A16BMA35R

BAGIAN SAHAM: 3209

Jenis Memori: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Ukuran memori: 16Mb (1M x 16), Tulis Waktu Siklus - Kata, Halaman: 35ns,

Wishlist.
MR4A08BCMA35R
Everspin Technologies Inc.

MR4A08BCMA35R

BAGIAN SAHAM: 2941

Jenis Memori: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Ukuran memori: 16Mb (2M x 8), Tulis Waktu Siklus - Kata, Halaman: 35ns,

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MR4A08BMA35R
Everspin Technologies Inc.

MR4A08BMA35R

BAGIAN SAHAM: 3193

Jenis Memori: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Ukuran memori: 16Mb (2M x 8), Tulis Waktu Siklus - Kata, Halaman: 35ns,

Wishlist.
MR4A08BCYS35R
Everspin Technologies Inc.

MR4A08BCYS35R

BAGIAN SAHAM: 2936

Jenis Memori: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Ukuran memori: 16Mb (2M x 8), Tulis Waktu Siklus - Kata, Halaman: 35ns,

Wishlist.
MR4A16BYS35
Everspin Technologies Inc.

MR4A16BYS35

BAGIAN SAHAM: 2288

Jenis Memori: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Ukuran memori: 16Mb (1M x 16), Tulis Waktu Siklus - Kata, Halaman: 35ns,

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MR25H40MDF
Everspin Technologies Inc.

MR25H40MDF

BAGIAN SAHAM: 4036

Jenis Memori: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Ukuran memori: 4Mb (512K x 8), Frekuensi Jam: 40MHz,

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MR4A08BYS35
Everspin Technologies Inc.

MR4A08BYS35

BAGIAN SAHAM: 2220

Jenis Memori: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Ukuran memori: 16Mb (2M x 8), Tulis Waktu Siklus - Kata, Halaman: 35ns,

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MR2A16AVYS35
Everspin Technologies Inc.

MR2A16AVYS35

BAGIAN SAHAM: 2698

Jenis Memori: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Ukuran memori: 4Mb (256K x 16), Tulis Waktu Siklus - Kata, Halaman: 35ns,

Wishlist.
MR2A16AVMA35
Everspin Technologies Inc.

MR2A16AVMA35

BAGIAN SAHAM: 2651

Jenis Memori: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Ukuran memori: 4Mb (256K x 16), Tulis Waktu Siklus - Kata, Halaman: 35ns,

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MR2A16ACMA35
Everspin Technologies Inc.

MR2A16ACMA35

BAGIAN SAHAM: 3023

Jenis Memori: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Ukuran memori: 4Mb (256K x 16), Tulis Waktu Siklus - Kata, Halaman: 35ns,

Wishlist.
MR2A16ACYS35
Everspin Technologies Inc.

MR2A16ACYS35

BAGIAN SAHAM: 3047

Jenis Memori: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Ukuran memori: 4Mb (256K x 16), Tulis Waktu Siklus - Kata, Halaman: 35ns,

Wishlist.
MR2A16AVMA35R
Everspin Technologies Inc.

MR2A16AVMA35R

BAGIAN SAHAM: 3824

Jenis Memori: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Ukuran memori: 4Mb (256K x 16), Tulis Waktu Siklus - Kata, Halaman: 35ns,

Wishlist.
MR2A08ACYS35
Everspin Technologies Inc.

MR2A08ACYS35

BAGIAN SAHAM: 3049

Jenis Memori: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Ukuran memori: 4Mb (512K x 8), Tulis Waktu Siklus - Kata, Halaman: 35ns,

Wishlist.
MR4A16BYS35R
Everspin Technologies Inc.

MR4A16BYS35R

BAGIAN SAHAM: 3172

Jenis Memori: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Ukuran memori: 16Mb (1M x 16), Tulis Waktu Siklus - Kata, Halaman: 35ns,

Wishlist.
MR2A08ACMA35
Everspin Technologies Inc.

MR2A08ACMA35

BAGIAN SAHAM: 3074

Jenis Memori: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Ukuran memori: 4Mb (512K x 8), Tulis Waktu Siklus - Kata, Halaman: 35ns,

Wishlist.
MR2A08AYS35
Everspin Technologies Inc.

MR2A08AYS35

BAGIAN SAHAM: 3343

Jenis Memori: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Ukuran memori: 4Mb (512K x 8), Tulis Waktu Siklus - Kata, Halaman: 35ns,

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MR25H40MDFR
Everspin Technologies Inc.

MR25H40MDFR

BAGIAN SAHAM: 5891

Jenis Memori: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Ukuran memori: 4Mb (512K x 8), Frekuensi Jam: 40MHz,

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MR2A08AMYS35R
Everspin Technologies Inc.

MR2A08AMYS35R

BAGIAN SAHAM: 3635

Jenis Memori: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Ukuran memori: 4Mb (512K x 8), Tulis Waktu Siklus - Kata, Halaman: 35ns,

Wishlist.
MR2A16AMA35
Everspin Technologies Inc.

MR2A16AMA35

BAGIAN SAHAM: 3314

Jenis Memori: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Ukuran memori: 4Mb (256K x 16), Tulis Waktu Siklus - Kata, Halaman: 35ns,

Wishlist.
MR2A16AMYS35R
Everspin Technologies Inc.

MR2A16AMYS35R

BAGIAN SAHAM: 3625

Jenis Memori: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Ukuran memori: 4Mb (256K x 16), Tulis Waktu Siklus - Kata, Halaman: 35ns,

Wishlist.
MR2A16AMA35R
Everspin Technologies Inc.

MR2A16AMA35R

BAGIAN SAHAM: 4676

Jenis Memori: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Ukuran memori: 4Mb (256K x 16), Tulis Waktu Siklus - Kata, Halaman: 35ns,

Wishlist.
MR2A16AYS35
Everspin Technologies Inc.

MR2A16AYS35

BAGIAN SAHAM: 3300

Jenis Memori: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Ukuran memori: 4Mb (256K x 16), Tulis Waktu Siklus - Kata, Halaman: 35ns,

Wishlist.
MR2A08AMA35R
Everspin Technologies Inc.

MR2A08AMA35R

BAGIAN SAHAM: 4722

Jenis Memori: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Ukuran memori: 4Mb (512K x 8), Tulis Waktu Siklus - Kata, Halaman: 35ns,

Wishlist.
MR2A08ACMA35R
Everspin Technologies Inc.

MR2A08ACMA35R

BAGIAN SAHAM: 4344

Jenis Memori: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Ukuran memori: 4Mb (512K x 8), Tulis Waktu Siklus - Kata, Halaman: 35ns,

Wishlist.
MR2A16ACMA35R
Everspin Technologies Inc.

MR2A16ACMA35R

BAGIAN SAHAM: 4318

Jenis Memori: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Ukuran memori: 4Mb (256K x 16), Tulis Waktu Siklus - Kata, Halaman: 35ns,

Wishlist.
MR2A16AMYS35
Everspin Technologies Inc.

MR2A16AMYS35

BAGIAN SAHAM: 3373

Jenis Memori: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Ukuran memori: 4Mb (256K x 16), Tulis Waktu Siklus - Kata, Halaman: 35ns,

Wishlist.
MR2A08AMA35
Everspin Technologies Inc.

MR2A08AMA35

BAGIAN SAHAM: 4378

Jenis Memori: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Ukuran memori: 4Mb (512K x 8), Tulis Waktu Siklus - Kata, Halaman: 35ns,

Wishlist.
MR2A16AVYS35R
Everspin Technologies Inc.

MR2A16AVYS35R

BAGIAN SAHAM: 3774

Jenis Memori: Non-Volatile, Format Memori: RAM, Teknologi: MRAM (Magnetoresistive RAM), Ukuran memori: 4Mb (256K x 16), Tulis Waktu Siklus - Kata, Halaman: 35ns,

Wishlist.