BAGIAN SAHAM: 21570
Tipe FET: 2 N-Channel (Half Bridge), Fitur FET: GaNFET (Gallium Nitride), Tiriskan ke Tegangan Sumber (Vdss): 60V, Arus - Pembuangan Kontinu (Id) @ 25°C: 9.5A, 38A, Rds Aktif (Maks) @ Id, Vgs: 11.5 mOhm @ 20A, 5V, 2.7 mOhm @ 20A, 5V, Vgs(th) (Maks) @ Id: 2.5V @ 3mA, 2.5V @ 12mA,