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Transistor - Bipolar (BJT) - Tunggal, Pra-Bias

BCR 149F E6327
Infineon Technologies

BCR 149F E6327

BAGIAN SAHAM: 3262

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 70mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V,

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BCR 148T E6327
Infineon Technologies

BCR 148T E6327

BAGIAN SAHAM: 1882

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 70mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 47 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

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BCR148WE6327BTSA1
Infineon Technologies

BCR148WE6327BTSA1

BAGIAN SAHAM: 1902

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 47 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

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BCR 148F E6327
Infineon Technologies

BCR 148F E6327

BAGIAN SAHAM: 3260

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 47 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

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BCR 148L3 E6327
Infineon Technologies

BCR 148L3 E6327

BAGIAN SAHAM: 1913

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 70mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 47 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

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BCR 148F B6327
Infineon Technologies

BCR 148F B6327

BAGIAN SAHAM: 1865

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 47 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

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BCR 148 B6327
Infineon Technologies

BCR 148 B6327

BAGIAN SAHAM: 1911

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 47 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

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BCR 146T E6327
Infineon Technologies

BCR 146T E6327

BAGIAN SAHAM: 1826

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 70mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 47 kOhms, Resistor - Basis Emitor (R2): 22 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V,

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BCR 146L3 E6327
Infineon Technologies

BCR 146L3 E6327

BAGIAN SAHAM: 3245

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 70mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 47 kOhms, Resistor - Basis Emitor (R2): 22 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V,

Untuk Wishlist.
BCR 146F E6327
Infineon Technologies

BCR 146F E6327

BAGIAN SAHAM: 1912

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 70mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 47 kOhms, Resistor - Basis Emitor (R2): 22 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V,

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BCR142WE6327HTSA1
Infineon Technologies

BCR142WE6327HTSA1

BAGIAN SAHAM: 1824

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 22 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

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BCR 142L3 E6327
Infineon Technologies

BCR 142L3 E6327

BAGIAN SAHAM: 1858

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 22 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

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BCR 142T E6327
Infineon Technologies

BCR 142T E6327

BAGIAN SAHAM: 1827

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 22 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

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BCR142B6327HTLA1
Infineon Technologies

BCR142B6327HTLA1

BAGIAN SAHAM: 1896

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 22 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

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BCR 142F E6327
Infineon Technologies

BCR 142F E6327

BAGIAN SAHAM: 1836

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 22 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

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BCR 141T E6327
Infineon Technologies

BCR 141T E6327

BAGIAN SAHAM: 1866

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 22 kOhms, Resistor - Basis Emitor (R2): 22 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V,

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BCR 141F E6327
Infineon Technologies

BCR 141F E6327

BAGIAN SAHAM: 1842

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 22 kOhms, Resistor - Basis Emitor (R2): 22 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V,

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BCR 141L3 E6327
Infineon Technologies

BCR 141L3 E6327

BAGIAN SAHAM: 1865

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 22 kOhms, Resistor - Basis Emitor (R2): 22 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V,

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BCR 139T E6327
Infineon Technologies

BCR 139T E6327

BAGIAN SAHAM: 1828

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 22 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V,

Untuk Wishlist.
BCR 139L3 E6327
Infineon Technologies

BCR 139L3 E6327

BAGIAN SAHAM: 1852

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 22 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V,

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BCR 139F E6327
Infineon Technologies

BCR 139F E6327

BAGIAN SAHAM: 1851

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 22 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V,

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BCR135WE6327BTSA1
Infineon Technologies

BCR135WE6327BTSA1

BAGIAN SAHAM: 1901

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 10 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

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BCR 135T E6327
Infineon Technologies

BCR 135T E6327

BAGIAN SAHAM: 1886

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 10 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

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BCR 135L3 E6327
Infineon Technologies

BCR 135L3 E6327

BAGIAN SAHAM: 1824

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 10 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

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BCR133WE6327HTSA1
Infineon Technologies

BCR133WE6327HTSA1

BAGIAN SAHAM: 1880

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 10 kOhms, Resistor - Basis Emitor (R2): 10 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V,

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BCR 135 B6327
Infineon Technologies

BCR 135 B6327

BAGIAN SAHAM: 1826

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 10 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

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BCR 133T E6327
Infineon Technologies

BCR 133T E6327

BAGIAN SAHAM: 1833

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 10 kOhms, Resistor - Basis Emitor (R2): 10 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V,

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BCR 133L3 E6327
Infineon Technologies

BCR 133L3 E6327

BAGIAN SAHAM: 5335

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 10 kOhms, Resistor - Basis Emitor (R2): 10 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V,

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BCR 133F E6327
Infineon Technologies

BCR 133F E6327

BAGIAN SAHAM: 1858

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 10 kOhms, Resistor - Basis Emitor (R2): 10 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V,

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BCR129WE6327HTSA1
Infineon Technologies

BCR129WE6327HTSA1

BAGIAN SAHAM: 1894

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 10 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V,

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BCR 133 B6327
Infineon Technologies

BCR 133 B6327

BAGIAN SAHAM: 1845

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 10 kOhms, Resistor - Basis Emitor (R2): 10 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V,

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BCR 129T E6327
Infineon Technologies

BCR 129T E6327

BAGIAN SAHAM: 1855

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 10 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V,

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BCR 129L3 E6327
Infineon Technologies

BCR 129L3 E6327

BAGIAN SAHAM: 1847

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 10 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V,

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BCR119WE6327HTSA1
Infineon Technologies

BCR119WE6327HTSA1

BAGIAN SAHAM: 1904

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 4.7 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V,

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BCR 119L3 E6327
Infineon Technologies

BCR 119L3 E6327

BAGIAN SAHAM: 1849

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 4.7 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V,

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BCR 119T E6327
Infineon Technologies

BCR 119T E6327

BAGIAN SAHAM: 1913

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 4.7 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V,

Untuk Wishlist.