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Transistor - Bipolar (BJT) - Tunggal, Pra-Bias

BCR 185L3 E6327
Infineon Technologies

BCR 185L3 E6327

BAGIAN SAHAM: 1871

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 10 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

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BCR183WE6327HTSA1
Infineon Technologies

BCR183WE6327HTSA1

BAGIAN SAHAM: 1865

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 10 kOhms, Resistor - Basis Emitor (R2): 10 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V,

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BCR 183T E6327
Infineon Technologies

BCR 183T E6327

BAGIAN SAHAM: 1847

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 10 kOhms, Resistor - Basis Emitor (R2): 10 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V,

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BCR 183L3 E6327
Infineon Technologies

BCR 183L3 E6327

BAGIAN SAHAM: 1907

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 10 kOhms, Resistor - Basis Emitor (R2): 10 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V,

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BCR 183F E6327
Infineon Technologies

BCR 183F E6327

BAGIAN SAHAM: 3202

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 10 kOhms, Resistor - Basis Emitor (R2): 10 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V,

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BCR 183 B6327
Infineon Technologies

BCR 183 B6327

BAGIAN SAHAM: 1927

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 10 kOhms, Resistor - Basis Emitor (R2): 10 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V,

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BCR 179T E6327
Infineon Technologies

BCR 179T E6327

BAGIAN SAHAM: 1862

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 10 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V,

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BCR 179L3 E6327
Infineon Technologies

BCR 179L3 E6327

BAGIAN SAHAM: 1836

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 10 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V,

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BCR 179F E6327
Infineon Technologies

BCR 179F E6327

BAGIAN SAHAM: 1917

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 10 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V,

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BCR169WE6327HTSA1
Infineon Technologies

BCR169WE6327HTSA1

BAGIAN SAHAM: 1909

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 4.7 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V,

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BCR 169T E6327
Infineon Technologies

BCR 169T E6327

BAGIAN SAHAM: 3183

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 4.7 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V,

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BCR 169L3 E6327
Infineon Technologies

BCR 169L3 E6327

BAGIAN SAHAM: 1869

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 4.7 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V,

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BCR 169F E6327
Infineon Technologies

BCR 169F E6327

BAGIAN SAHAM: 1913

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 4.7 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V,

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BCR 166T E6327
Infineon Technologies

BCR 166T E6327

BAGIAN SAHAM: 1873

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 4.7 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

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BCR 166L3 E6327
Infineon Technologies

BCR 166L3 E6327

BAGIAN SAHAM: 1856

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 4.7 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

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BCR 166F E6327
Infineon Technologies

BCR 166F E6327

BAGIAN SAHAM: 1832

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 4.7 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

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BCR166B6327HTLA1
Infineon Technologies

BCR166B6327HTLA1

BAGIAN SAHAM: 1908

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 4.7 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

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BCR 164L3 E6327
Infineon Technologies

BCR 164L3 E6327

BAGIAN SAHAM: 1830

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 4.7 kOhms, Resistor - Basis Emitor (R2): 10 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V,

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BCR 164T E6327
Infineon Technologies

BCR 164T E6327

BAGIAN SAHAM: 3231

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 4.7 kOhms, Resistor - Basis Emitor (R2): 10 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V,

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BCR 164F E6327
Infineon Technologies

BCR 164F E6327

BAGIAN SAHAM: 1842

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 4.7 kOhms, Resistor - Basis Emitor (R2): 10 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V,

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BCR 162T E6327
Infineon Technologies

BCR 162T E6327

BAGIAN SAHAM: 1839

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 4.7 kOhms, Resistor - Basis Emitor (R2): 4.7 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V,

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BCR 162F E6327
Infineon Technologies

BCR 162F E6327

BAGIAN SAHAM: 1848

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 4.7 kOhms, Resistor - Basis Emitor (R2): 4.7 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V,

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BCR158WE6327HTSA1
Infineon Technologies

BCR158WE6327HTSA1

BAGIAN SAHAM: 1840

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 2.2 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

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BCR 162 B6327
Infineon Technologies

BCR 162 B6327

BAGIAN SAHAM: 1887

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 4.7 kOhms, Resistor - Basis Emitor (R2): 4.7 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V,

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BCR 158T E6327
Infineon Technologies

BCR 158T E6327

BAGIAN SAHAM: 1908

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 2.2 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

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BCR 158L3 E6327
Infineon Technologies

BCR 158L3 E6327

BAGIAN SAHAM: 1838

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 2.2 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

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BCR 158 B6327
Infineon Technologies

BCR 158 B6327

BAGIAN SAHAM: 1880

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 2.2 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

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BCR 158F E6327
Infineon Technologies

BCR 158F E6327

BAGIAN SAHAM: 1870

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 2.2 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

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BCR 153T E6327
Infineon Technologies

BCR 153T E6327

BAGIAN SAHAM: 1846

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 2.2 kOhms, Resistor - Basis Emitor (R2): 2.2 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V,

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BCR 153L3 E6327
Infineon Technologies

BCR 153L3 E6327

BAGIAN SAHAM: 1899

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 2.2 kOhms, Resistor - Basis Emitor (R2): 2.2 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V,

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BCR 153F E6327
Infineon Technologies

BCR 153F E6327

BAGIAN SAHAM: 1847

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 2.2 kOhms, Resistor - Basis Emitor (R2): 2.2 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V,

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BCR 151L3 E6327
Infineon Technologies

BCR 151L3 E6327

BAGIAN SAHAM: 1890

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 50mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 100 kOhms, Resistor - Basis Emitor (R2): 100 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

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BCR 151T E6327
Infineon Technologies

BCR 151T E6327

BAGIAN SAHAM: 1855

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 50mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 100 kOhms, Resistor - Basis Emitor (R2): 100 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

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BCR 151F E6327
Infineon Technologies

BCR 151F E6327

BAGIAN SAHAM: 1827

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 50mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 100 kOhms, Resistor - Basis Emitor (R2): 100 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

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BCR 149T E6327
Infineon Technologies

BCR 149T E6327

BAGIAN SAHAM: 1902

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 70mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V,

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BCR 149L3 E6327
Infineon Technologies

BCR 149L3 E6327

BAGIAN SAHAM: 1877

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 70mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V,

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