| Tipe | Deskripsi |
| Status Bagian | Active |
|---|---|
| Tipe FET | N-Channel |
| Teknologi | MOSFET (Metal Oxide) |
| Tiriskan ke Tegangan Sumber (Vdss) | 100V |
| Arus - Pembuangan Kontinu (Id) @ 25°C | 1.3A (Ta) |
| Tegangan Drive (Max Rds Aktif, Min Rds Aktif) | 4V, 5V |
| Rds Aktif (Maks) @ Id, Vgs | 270 mOhm @ 780mA, 5V |
| Vgs(th) (Maks) @ Id | 2V @ 250µA |
| Biaya Gerbang (Qg) (Maks) @ Vgs | 12nC @ 5V |
| Vgs (Maks) | ±10V |
| Kapasitansi Input (Ciss) (Maks) @ Vds | 490pF @ 25V |
| Fitur FET | - |
| Disipasi Daya (Maks) | 1.3W (Ta) |
| Suhu Operasional | -55°C ~ 175°C (TJ) |
| Jenis pemasangan: | Through Hole |
| Paket Perangkat Pemasok | 4-DIP, Hexdip, HVMDIP |
| Paket / Kasus | 4-DIP (0.300", 7.62mm) |
| ROHS Status | Compliant RoHS. |
|---|---|
| Tingkat sensitivitas kelembaban (MSL) | Tak dapat diterapkan |
| Status siklus hidup | Usang / Akhir Kehidupan |
| Stok kategori. | Stok tersedia |
