| Tipe | Deskripsi |
| Status Bagian | Obsolete |
|---|---|
| Tipe FET | P-Channel |
| Teknologi | MOSFET (Metal Oxide) |
| Tiriskan ke Tegangan Sumber (Vdss) | 20V |
| Arus - Pembuangan Kontinu (Id) @ 25°C | 3.3A (Ta) |
| Tegangan Drive (Max Rds Aktif, Min Rds Aktif) | 4.5V, 10V |
| Rds Aktif (Maks) @ Id, Vgs | 125 mOhm @ 3.3A, 10V |
| Vgs(th) (Maks) @ Id | 3V @ 250µA |
| Biaya Gerbang (Qg) (Maks) @ Vgs | 3nC @ 5V |
| Vgs (Maks) | ±20V |
| Kapasitansi Input (Ciss) (Maks) @ Vds | 182pF @ 10V |
| Fitur FET | Schottky Diode (Isolated) |
| Disipasi Daya (Maks) | 900mW (Ta) |
| Suhu Operasional | -55°C ~ 150°C (TJ) |
| Jenis pemasangan: | Surface Mount |
| Paket Perangkat Pemasok | 8-SOIC |
| Paket / Kasus | 8-SOIC (0.154", 3.90mm Width) |
| ROHS Status | Compliant RoHS. |
|---|---|
| Tingkat sensitivitas kelembaban (MSL) | Tak dapat diterapkan |
| Status siklus hidup | Usang / Akhir Kehidupan |
| Stok kategori. | Stok tersedia |
