| Tipe | Deskripsi |
| Status Bagian | Active |
|---|---|
| Tipe FET | N-Channel |
| Teknologi | SiCFET (Silicon Carbide) |
| Tiriskan ke Tegangan Sumber (Vdss) | 1700V |
| Arus - Pembuangan Kontinu (Id) @ 25°C | 5.3A (Tc) |
| Tegangan Drive (Max Rds Aktif, Min Rds Aktif) | 20V |
| Rds Aktif (Maks) @ Id, Vgs | 1.4 Ohm @ 2A, 20V |
| Vgs(th) (Maks) @ Id | 3.1V @ 500µA (Typ) |
| Biaya Gerbang (Qg) (Maks) @ Vgs | 13nC @ 20V |
| Vgs (Maks) | +25V, -10V |
| Kapasitansi Input (Ciss) (Maks) @ Vds | 200pF @ 1000V |
| Fitur FET | - |
| Disipasi Daya (Maks) | 78W (Tc) |
| Suhu Operasional | -55°C ~ 150°C (TJ) |
| Jenis pemasangan: | Surface Mount |
| Paket Perangkat Pemasok | D2PAK (7-Lead) |
| Paket / Kasus | TO-263-7 (Straight Leads) |
| ROHS Status | Compliant RoHS. |
|---|---|
| Tingkat sensitivitas kelembaban (MSL) | Tak dapat diterapkan |
| Status siklus hidup | Usang / Akhir Kehidupan |
| Stok kategori. | Stok tersedia |
