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Dioda - Penyearah - Tunggal

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  • Dioda - Penyearah - Tunggal
RSFGL MQG
Taiwan Semiconductor Corporation

RSFGL MQG

BAGIAN SAHAM: 219

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-Rata Dikoreksi (Io): 500mA, Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 500mA, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 150ns,

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SS12L RFG
Taiwan Semiconductor Corporation

SS12L RFG

BAGIAN SAHAM: 176

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 20V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 450mV @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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S1GL RFG
Taiwan Semiconductor Corporation

S1GL RFG

BAGIAN SAHAM: 226

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 1A, Kecepatan: Standard Recovery >500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 1.8µs,

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ES1HM2G
Taiwan Semiconductor Corporation

ES1HM2G

BAGIAN SAHAM: 173

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 500V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.7V @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 35ns,

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ES1DL RHG
Taiwan Semiconductor Corporation

ES1DL RHG

BAGIAN SAHAM: 216

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 950mV @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 35ns,

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RS1DL MTG
Taiwan Semiconductor Corporation

RS1DL MTG

BAGIAN SAHAM: 212

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-Rata Dikoreksi (Io): 800mA, Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 800mA, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 150ns,

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RS1ALHMTG
Taiwan Semiconductor Corporation

RS1ALHMTG

BAGIAN SAHAM: 209

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 50V, Arus - Rata-Rata Dikoreksi (Io): 800mA, Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 800mA, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 150ns,

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S1JL MHG
Taiwan Semiconductor Corporation

S1JL MHG

BAGIAN SAHAM: 222

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 1A, Kecepatan: Standard Recovery >500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 1.8µs,

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ES1AL MHG
Taiwan Semiconductor Corporation

ES1AL MHG

BAGIAN SAHAM: 175

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 50V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 950mV @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 35ns,

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RSFBL RFG
Taiwan Semiconductor Corporation

RSFBL RFG

BAGIAN SAHAM: 199

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-Rata Dikoreksi (Io): 500mA, Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 500mA, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 150ns,

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ES1CLHM2G
Taiwan Semiconductor Corporation

ES1CLHM2G

BAGIAN SAHAM: 197

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 150V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 950mV @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 35ns,

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RS1GL MQG
Taiwan Semiconductor Corporation

RS1GL MQG

BAGIAN SAHAM: 205

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-Rata Dikoreksi (Io): 800mA, Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 800mA, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 150ns,

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SS13LHMTG
Taiwan Semiconductor Corporation

SS13LHMTG

BAGIAN SAHAM: 210

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 30V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 500mV @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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ES1DLHMHG
Taiwan Semiconductor Corporation

ES1DLHMHG

BAGIAN SAHAM: 168

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 950mV @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 35ns,

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SS19L RFG
Taiwan Semiconductor Corporation

SS19L RFG

BAGIAN SAHAM: 157

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 90V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 800mV @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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SS26LHRFG
Taiwan Semiconductor Corporation

SS26LHRFG

BAGIAN SAHAM: 210

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 60V, Arus - Rata-Rata Dikoreksi (Io): 2A, Tegangan - Maju (Vf) (Maks) @ If: 700mV @ 2A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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RSFML MTG
Taiwan Semiconductor Corporation

RSFML MTG

BAGIAN SAHAM: 182

Tipe Dioda: Standard, Arus - Rata-Rata Dikoreksi (Io): 500mA, Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 500mA, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 500ns,

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RSFBLHM2G
Taiwan Semiconductor Corporation

RSFBLHM2G

BAGIAN SAHAM: 191

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-Rata Dikoreksi (Io): 500mA, Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 500mA, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 150ns,

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S1KL RHG
Taiwan Semiconductor Corporation

S1KL RHG

BAGIAN SAHAM: 209

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 800V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 1A, Kecepatan: Standard Recovery >500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 1.8µs,

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SS36L MTG
Taiwan Semiconductor Corporation

SS36L MTG

BAGIAN SAHAM: 140

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 60V, Arus - Rata-Rata Dikoreksi (Io): 3A, Tegangan - Maju (Vf) (Maks) @ If: 750mV @ 3A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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S1DL MHG
Taiwan Semiconductor Corporation

S1DL MHG

BAGIAN SAHAM: 156

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 1A, Kecepatan: Standard Recovery >500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 1.8µs,

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ES1CLHRTG
Taiwan Semiconductor Corporation

ES1CLHRTG

BAGIAN SAHAM: 229

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 150V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 950mV @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 35ns,

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RSFMLHRHG
Taiwan Semiconductor Corporation

RSFMLHRHG

BAGIAN SAHAM: 154

Tipe Dioda: Standard, Arus - Rata-Rata Dikoreksi (Io): 500mA, Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 500mA, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 500ns,

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S1DLHMTG
Taiwan Semiconductor Corporation

S1DLHMTG

BAGIAN SAHAM: 225

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 1A, Kecepatan: Standard Recovery >500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 1.8µs,

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RS1AL MTG
Taiwan Semiconductor Corporation

RS1AL MTG

BAGIAN SAHAM: 206

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 50V, Arus - Rata-Rata Dikoreksi (Io): 800mA, Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 800mA, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 150ns,

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RSFKL MHG
Taiwan Semiconductor Corporation

RSFKL MHG

BAGIAN SAHAM: 154

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 800V, Arus - Rata-Rata Dikoreksi (Io): 500mA, Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 500mA, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 500ns,

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ES1FL MQG
Taiwan Semiconductor Corporation

ES1FL MQG

BAGIAN SAHAM: 221

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 300V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 35ns,

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SS16LHMHG
Taiwan Semiconductor Corporation

SS16LHMHG

BAGIAN SAHAM: 201

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 60V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 700mV @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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S1GL M2G
Taiwan Semiconductor Corporation

S1GL M2G

BAGIAN SAHAM: 198

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 1A, Kecepatan: Standard Recovery >500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 1.8µs,

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SS36L RTG
Taiwan Semiconductor Corporation

SS36L RTG

BAGIAN SAHAM: 186

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 60V, Arus - Rata-Rata Dikoreksi (Io): 3A, Tegangan - Maju (Vf) (Maks) @ If: 750mV @ 3A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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RS1GLHMTG
Taiwan Semiconductor Corporation

RS1GLHMTG

BAGIAN SAHAM: 218

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-Rata Dikoreksi (Io): 800mA, Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 800mA, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 150ns,

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S1GLHMTG
Taiwan Semiconductor Corporation

S1GLHMTG

BAGIAN SAHAM: 219

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 1A, Kecepatan: Standard Recovery >500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 1.8µs,

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SS210LHRFG
Taiwan Semiconductor Corporation

SS210LHRFG

BAGIAN SAHAM: 213

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-Rata Dikoreksi (Io): 2A, Tegangan - Maju (Vf) (Maks) @ If: 850mV @ 2A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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HS1ML RFG
Taiwan Semiconductor Corporation

HS1ML RFG

BAGIAN SAHAM: 195

Tipe Dioda: Standard, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.7V @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 75ns,

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S1GLHRVG
Taiwan Semiconductor Corporation

S1GLHRVG

BAGIAN SAHAM: 184

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 1A, Kecepatan: Standard Recovery >500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 1.8µs,

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SS25L MQG
Taiwan Semiconductor Corporation

SS25L MQG

BAGIAN SAHAM: 221

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 50V, Arus - Rata-Rata Dikoreksi (Io): 2A, Tegangan - Maju (Vf) (Maks) @ If: 700mV @ 2A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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