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Dioda - Penyearah - Tunggal

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  • Dioda - Penyearah - Tunggal
SF41GHB0G
Taiwan Semiconductor Corporation

SF41GHB0G

BAGIAN SAHAM: 167

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 50V, Arus - Rata-Rata Dikoreksi (Io): 4A, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 4A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 35ns,

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SK12H60 B0G
Taiwan Semiconductor Corporation

SK12H60 B0G

BAGIAN SAHAM: 143

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 60V, Arus - Rata-Rata Dikoreksi (Io): 12A, Tegangan - Maju (Vf) (Maks) @ If: 700mV @ 12A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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SFT12GHA0G
Taiwan Semiconductor Corporation

SFT12GHA0G

BAGIAN SAHAM: 147

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 950mV @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 35ns,

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F1T3GHA1G
Taiwan Semiconductor Corporation

F1T3GHA1G

BAGIAN SAHAM: 84

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 150ns,

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SRT13HA0G
Taiwan Semiconductor Corporation

SRT13HA0G

BAGIAN SAHAM: 143

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 30V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 550mV @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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SR102 B0G
Taiwan Semiconductor Corporation

SR102 B0G

BAGIAN SAHAM: 87

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 20V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 550mV @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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FR152G A0G
Taiwan Semiconductor Corporation

FR152G A0G

BAGIAN SAHAM: 93

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-Rata Dikoreksi (Io): 1.5A, Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 1.5A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 150ns,

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SF37G A0G
Taiwan Semiconductor Corporation

SF37G A0G

BAGIAN SAHAM: 81

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 500V, Arus - Rata-Rata Dikoreksi (Io): 3A, Tegangan - Maju (Vf) (Maks) @ If: 1.7V @ 3A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 35ns,

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SRAF860HC0G
Taiwan Semiconductor Corporation

SRAF860HC0G

BAGIAN SAHAM: 152

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 60V, Arus - Rata-Rata Dikoreksi (Io): 8A, Tegangan - Maju (Vf) (Maks) @ If: 700mV @ 8A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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SRAF820HC0G
Taiwan Semiconductor Corporation

SRAF820HC0G

BAGIAN SAHAM: 95

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 20V, Arus - Rata-Rata Dikoreksi (Io): 8A, Tegangan - Maju (Vf) (Maks) @ If: 550mV @ 8A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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SRAF840 C0G
Taiwan Semiconductor Corporation

SRAF840 C0G

BAGIAN SAHAM: 173

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 40V, Arus - Rata-Rata Dikoreksi (Io): 8A, Tegangan - Maju (Vf) (Maks) @ If: 550mV @ 8A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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SRAS830HMNG
Taiwan Semiconductor Corporation

SRAS830HMNG

BAGIAN SAHAM: 94

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 30V, Arus - Rata-Rata Dikoreksi (Io): 8A, Tegangan - Maju (Vf) (Maks) @ If: 550mV @ 8A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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SFT16GHR0G
Taiwan Semiconductor Corporation

SFT16GHR0G

BAGIAN SAHAM: 132

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 35ns,

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HT11G R0G
Taiwan Semiconductor Corporation

HT11G R0G

BAGIAN SAHAM: 162

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 50V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 50ns,

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SF43GHA0G
Taiwan Semiconductor Corporation

SF43GHA0G

BAGIAN SAHAM: 146

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 150V, Arus - Rata-Rata Dikoreksi (Io): 4A, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 4A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 35ns,

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UF1DHA0G
Taiwan Semiconductor Corporation

UF1DHA0G

BAGIAN SAHAM: 167

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 50ns,

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SFA1008GHC0G
Taiwan Semiconductor Corporation

SFA1008GHC0G

BAGIAN SAHAM: 102

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-Rata Dikoreksi (Io): 10A, Tegangan - Maju (Vf) (Maks) @ If: 1.7V @ 10A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 35ns,

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SR106 B0G
Taiwan Semiconductor Corporation

SR106 B0G

BAGIAN SAHAM: 168

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 60V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 700mV @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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UF4003 A0G
Taiwan Semiconductor Corporation

UF4003 A0G

BAGIAN SAHAM: 161

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 50ns,

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SF36G A0G
Taiwan Semiconductor Corporation

SF36G A0G

BAGIAN SAHAM: 89

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-Rata Dikoreksi (Io): 3A, Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 3A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 35ns,

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UF4003HA0G
Taiwan Semiconductor Corporation

UF4003HA0G

BAGIAN SAHAM: 116

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 50ns,

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SR806HA0G
Taiwan Semiconductor Corporation

SR806HA0G

BAGIAN SAHAM: 159

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 60V, Arus - Rata-Rata Dikoreksi (Io): 8A, Tegangan - Maju (Vf) (Maks) @ If: 700mV @ 8A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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MBRS1635HMNG
Taiwan Semiconductor Corporation

MBRS1635HMNG

BAGIAN SAHAM: 165

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 35V, Arus - Rata-Rata Dikoreksi (Io): 16A, Tegangan - Maju (Vf) (Maks) @ If: 630mV @ 16A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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FR107G R1G
Taiwan Semiconductor Corporation

FR107G R1G

BAGIAN SAHAM: 167

Tipe Dioda: Standard, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 500ns,

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FR152G B0G
Taiwan Semiconductor Corporation

FR152G B0G

BAGIAN SAHAM: 113

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-Rata Dikoreksi (Io): 1.5A, Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 1.5A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 150ns,

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SRT110HR0G
Taiwan Semiconductor Corporation

SRT110HR0G

BAGIAN SAHAM: 81

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 800mV @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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SF11G A0G
Taiwan Semiconductor Corporation

SF11G A0G

BAGIAN SAHAM: 110

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 50V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 950mV @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 35ns,

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SR1050 C0G
Taiwan Semiconductor Corporation

SR1050 C0G

BAGIAN SAHAM: 115

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 50V, Arus - Rata-Rata Dikoreksi (Io): 10A, Tegangan - Maju (Vf) (Maks) @ If: 700mV @ 5A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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SRAF830HC0G
Taiwan Semiconductor Corporation

SRAF830HC0G

BAGIAN SAHAM: 81

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 30V, Arus - Rata-Rata Dikoreksi (Io): 8A, Tegangan - Maju (Vf) (Maks) @ If: 550mV @ 8A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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SF35GHA0G
Taiwan Semiconductor Corporation

SF35GHA0G

BAGIAN SAHAM: 125

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 300V, Arus - Rata-Rata Dikoreksi (Io): 3A, Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 3A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 35ns,

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UF1J A0G
Taiwan Semiconductor Corporation

UF1J A0G

BAGIAN SAHAM: 176

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.7V @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 75ns,

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SFA804G C0G
Taiwan Semiconductor Corporation

SFA804G C0G

BAGIAN SAHAM: 121

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-Rata Dikoreksi (Io): 8A, Tegangan - Maju (Vf) (Maks) @ If: 975mV @ 8A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 35ns,

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GPAS1004 MNG
Taiwan Semiconductor Corporation

GPAS1004 MNG

BAGIAN SAHAM: 151

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-Rata Dikoreksi (Io): 10A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 10A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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SF12G B0G
Taiwan Semiconductor Corporation

SF12G B0G

BAGIAN SAHAM: 132

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 950mV @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 35ns,

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F1T1GHA1G
Taiwan Semiconductor Corporation

F1T1GHA1G

BAGIAN SAHAM: 157

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 50V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 150ns,

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SR109 R1G
Taiwan Semiconductor Corporation

SR109 R1G

BAGIAN SAHAM: 132

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 90V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 850mV @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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