Transistor - FET, MOSFET - Array

QJD1210010

BAGIAN SAHAM: 2869

Tipe FET: 2 N-Channel (Dual), Fitur FET: Silicon Carbide (SiC), Tiriskan ke Tegangan Sumber (Vdss): 1200V (1.2kV), Arus - Pembuangan Kontinu (Id) @ 25°C: 100A (Tc), Rds Aktif (Maks) @ Id, Vgs: 25 mOhm @ 100A, 20V, Vgs(th) (Maks) @ Id: 5V @ 10mA,

QJD1210SA1

BAGIAN SAHAM: 2941

Tipe FET: 2 N-Channel (Dual), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 1200V (1.2kV), Arus - Pembuangan Kontinu (Id) @ 25°C: 100A, Rds Aktif (Maks) @ Id, Vgs: 17 mOhm @ 100A, 15V, Vgs(th) (Maks) @ Id: 1.6V @ 34mA,

QJD1210SA2

BAGIAN SAHAM: 2896

Tipe FET: 2 N-Channel (Dual), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 1200V (1.2kV), Arus - Pembuangan Kontinu (Id) @ 25°C: 100A, Rds Aktif (Maks) @ Id, Vgs: 17 mOhm @ 100A, 15V, Vgs(th) (Maks) @ Id: 1.6V @ 34mA,

QJD1210SB1

BAGIAN SAHAM: 2931

QJD1210011

BAGIAN SAHAM: 3308

Tipe FET: 2 N-Channel (Dual), Fitur FET: Silicon Carbide (SiC), Tiriskan ke Tegangan Sumber (Vdss): 1200V (1.2kV), Arus - Pembuangan Kontinu (Id) @ 25°C: 100A (Tc), Rds Aktif (Maks) @ Id, Vgs: 25 mOhm @ 100A, 20V, Vgs(th) (Maks) @ Id: 5V @ 10mA,