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Transistor - Bipolar (BJT) - Tunggal, Pra-Bias

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  • Transistor - Bipolar (BJT) - Tunggal, Pra-Bias
BCR 162F E6327
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BCR 162F E6327

BAGIAN SAHAM: 1848

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 4.7 kOhms, Resistor - Basis Emitor (R2): 4.7 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V,

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BCR158WE6327HTSA1
Infineon Technologies

BCR158WE6327HTSA1

BAGIAN SAHAM: 1840

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 2.2 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

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BCR 162 B6327
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BCR 162 B6327

BAGIAN SAHAM: 1887

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 4.7 kOhms, Resistor - Basis Emitor (R2): 4.7 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V,

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BCR 158T E6327
Infineon Technologies

BCR 158T E6327

BAGIAN SAHAM: 1908

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 2.2 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

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BCR 158L3 E6327
Infineon Technologies

BCR 158L3 E6327

BAGIAN SAHAM: 1838

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 2.2 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

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BCR 158 B6327
Infineon Technologies

BCR 158 B6327

BAGIAN SAHAM: 1880

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 2.2 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

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BCR 158F E6327
Infineon Technologies

BCR 158F E6327

BAGIAN SAHAM: 1870

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 2.2 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

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BCR 153T E6327
Infineon Technologies

BCR 153T E6327

BAGIAN SAHAM: 1846

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 2.2 kOhms, Resistor - Basis Emitor (R2): 2.2 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V,

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BCR 153L3 E6327
Infineon Technologies

BCR 153L3 E6327

BAGIAN SAHAM: 1899

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 2.2 kOhms, Resistor - Basis Emitor (R2): 2.2 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V,

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BCR 153F E6327
Infineon Technologies

BCR 153F E6327

BAGIAN SAHAM: 1847

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 2.2 kOhms, Resistor - Basis Emitor (R2): 2.2 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V,

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BCR 151L3 E6327
Infineon Technologies

BCR 151L3 E6327

BAGIAN SAHAM: 1890

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 50mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 100 kOhms, Resistor - Basis Emitor (R2): 100 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

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BCR 151T E6327
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BCR 151T E6327

BAGIAN SAHAM: 1855

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 50mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 100 kOhms, Resistor - Basis Emitor (R2): 100 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

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BCR 151F E6327
Infineon Technologies

BCR 151F E6327

BAGIAN SAHAM: 1827

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 50mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 100 kOhms, Resistor - Basis Emitor (R2): 100 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

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BCR 149T E6327
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BCR 149T E6327

BAGIAN SAHAM: 1902

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 70mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V,

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BCR 149L3 E6327
Infineon Technologies

BCR 149L3 E6327

BAGIAN SAHAM: 1877

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 70mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V,

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BCR 149F E6327
Infineon Technologies

BCR 149F E6327

BAGIAN SAHAM: 3262

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 70mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V,

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BCR 148T E6327
Infineon Technologies

BCR 148T E6327

BAGIAN SAHAM: 1882

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 70mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 47 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

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BCR148WE6327BTSA1
Infineon Technologies

BCR148WE6327BTSA1

BAGIAN SAHAM: 1902

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 47 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

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BCR 148F E6327
Infineon Technologies

BCR 148F E6327

BAGIAN SAHAM: 3260

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 47 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

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BCR 148L3 E6327
Infineon Technologies

BCR 148L3 E6327

BAGIAN SAHAM: 1913

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 70mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 47 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

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BCR 148F B6327
Infineon Technologies

BCR 148F B6327

BAGIAN SAHAM: 1865

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 47 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

Wishlist.
BCR 148 B6327
Infineon Technologies

BCR 148 B6327

BAGIAN SAHAM: 1911

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 47 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

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BCR 146T E6327
Infineon Technologies

BCR 146T E6327

BAGIAN SAHAM: 1826

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 70mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 47 kOhms, Resistor - Basis Emitor (R2): 22 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V,

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BCR 146L3 E6327
Infineon Technologies

BCR 146L3 E6327

BAGIAN SAHAM: 3245

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 70mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 47 kOhms, Resistor - Basis Emitor (R2): 22 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V,

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BCR 146F E6327
Infineon Technologies

BCR 146F E6327

BAGIAN SAHAM: 1912

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 70mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 47 kOhms, Resistor - Basis Emitor (R2): 22 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V,

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BCR142WE6327HTSA1
Infineon Technologies

BCR142WE6327HTSA1

BAGIAN SAHAM: 1824

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 22 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

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BCR 142L3 E6327
Infineon Technologies

BCR 142L3 E6327

BAGIAN SAHAM: 1858

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 22 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

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BCR 142T E6327
Infineon Technologies

BCR 142T E6327

BAGIAN SAHAM: 1827

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 22 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

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BCR142B6327HTLA1
Infineon Technologies

BCR142B6327HTLA1

BAGIAN SAHAM: 1896

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 22 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

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BCR 142F E6327
Infineon Technologies

BCR 142F E6327

BAGIAN SAHAM: 1836

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 22 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

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BCR 141T E6327
Infineon Technologies

BCR 141T E6327

BAGIAN SAHAM: 1866

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 22 kOhms, Resistor - Basis Emitor (R2): 22 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V,

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BCR 141F E6327
Infineon Technologies

BCR 141F E6327

BAGIAN SAHAM: 1842

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 22 kOhms, Resistor - Basis Emitor (R2): 22 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V,

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BCR 141L3 E6327
Infineon Technologies

BCR 141L3 E6327

BAGIAN SAHAM: 1865

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 22 kOhms, Resistor - Basis Emitor (R2): 22 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V,

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BCR 139T E6327
Infineon Technologies

BCR 139T E6327

BAGIAN SAHAM: 1828

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 22 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V,

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BCR 139L3 E6327
Infineon Technologies

BCR 139L3 E6327

BAGIAN SAHAM: 1852

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 22 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V,

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BCR 139F E6327
Infineon Technologies

BCR 139F E6327

BAGIAN SAHAM: 1851

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 22 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V,

Wishlist.