Transistor - Bipolar (BJT) - Tunggal, Pra-Bias

DTA123JKAT146

BAGIAN SAHAM: 122994

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 2.2 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

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DTA143XUBTL

BAGIAN SAHAM: 121277

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 4.7 kOhms, Resistor - Basis Emitor (R2): 10 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V,

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DTC143TETL

BAGIAN SAHAM: 115993

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 4.7 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V,

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DTA143XUAT106

BAGIAN SAHAM: 148857

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 4.7 kOhms, Resistor - Basis Emitor (R2): 10 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V,

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DTD114ECT116

BAGIAN SAHAM: 171375

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 500mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 10 kOhms, Resistor - Basis Emitor (R2): 10 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V,

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PDTC123YE,115

BAGIAN SAHAM: 1947

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 2.2 kOhms, Resistor - Basis Emitor (R2): 10 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 5V,

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PDTA143ZK,115

BAGIAN SAHAM: 1977

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 4.7 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V,

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PDTA124XS,126

BAGIAN SAHAM: 1962

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 22 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V,

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PBRP113ZS,126

BAGIAN SAHAM: 1947

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 800mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 1 kOhms, Resistor - Basis Emitor (R2): 10 kOhms,

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PBRN123ES,126

BAGIAN SAHAM: 2087

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 800mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 40V, Resistor - Basis (R1): 2.2 kOhms, Resistor - Basis Emitor (R2): 2.2 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 280 @ 300mA, 5V,

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PDTA114ES,126

BAGIAN SAHAM: 1924

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 10 kOhms, Resistor - Basis Emitor (R2): 10 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V,

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UNR521MG0L

BAGIAN SAHAM: 1944

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 2.2 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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UNR92A5G0L

BAGIAN SAHAM: 1908

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 80mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 10 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

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UNR411300A

BAGIAN SAHAM: 180473

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 47 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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DRC2144E0L

BAGIAN SAHAM: 169529

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 47 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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UNR921EJ0L

BAGIAN SAHAM: 105310

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 47 kOhms, Resistor - Basis Emitor (R2): 22 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V,

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UNR91ALG0L

BAGIAN SAHAM: 3236

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 80mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 4.7 kOhms, Resistor - Basis Emitor (R2): 4.7 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 10V,

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UNR511LG0L

BAGIAN SAHAM: 188251

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 4.7 kOhms, Resistor - Basis Emitor (R2): 4.7 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 10V,

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UNR5215G0L

BAGIAN SAHAM: 189341

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 10 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

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UNR511NG0L

BAGIAN SAHAM: 1921

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 4.7 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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UNR9214G0L

BAGIAN SAHAM: 1883

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 10 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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UNR5118G0L

BAGIAN SAHAM: 1971

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 510 Ohms, Resistor - Basis Emitor (R2): 5.1 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 10V,

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DTA113EM3T5G

BAGIAN SAHAM: 155217

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 1 kOhms, Resistor - Basis Emitor (R2): 1 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V,

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NSVDTA114EET1G

BAGIAN SAHAM: 140810

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 10 kOhms, Resistor - Basis Emitor (R2): 10 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V,

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MMUN2114LT1G

BAGIAN SAHAM: 191062

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 10 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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DTC143EM3T5G

BAGIAN SAHAM: 154553

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 4.7 kOhms, Resistor - Basis Emitor (R2): 4.7 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V,

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FJN3304RBU

BAGIAN SAHAM: 2013

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 47 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V,

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Toshiba Semiconductor and Storage

DTC113EM3T5G

BAGIAN SAHAM: 174078

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 1 kOhms, Resistor - Basis Emitor (R2): 1 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V,

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RN1113CT(TPL3)

BAGIAN SAHAM: 2014

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 50mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 20V, Resistor - Basis (R1): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V,

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Toshiba Semiconductor and Storage

RN1102,LF(CT

BAGIAN SAHAM: 176393

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 10 kOhms, Resistor - Basis Emitor (R2): 10 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V,

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DDTA115TKA-7-F

BAGIAN SAHAM: 1924

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 100 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V,

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DDTD114GC-7-F

BAGIAN SAHAM: 189621

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 500mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis Emitor (R2): 10 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V,

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DDTB123YU-7-F

BAGIAN SAHAM: 195755

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 500mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 2.2 kOhms, Resistor - Basis Emitor (R2): 10 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V,

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DDTC143ZE-7-F

BAGIAN SAHAM: 164966

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 4.7 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Untuk Wishlist.