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Transistor - Bipolar (BJT) - Tunggal, Pra-Bias

DTA143ZUAT106
Rohm Semiconductor

DTA143ZUAT106

BAGIAN SAHAM: 111623

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 4.7 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

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DTA123JEFRATL
Rohm Semiconductor

DTA123JEFRATL

BAGIAN SAHAM: 9923

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Resistor - Basis (R1): 2.2 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

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DTA113TKAT146
Rohm Semiconductor

DTA113TKAT146

BAGIAN SAHAM: 152606

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 1 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V,

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DTC124TKAT146
Rohm Semiconductor

DTC124TKAT146

BAGIAN SAHAM: 132354

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 22 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V,

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DTC013ZUBTL
Rohm Semiconductor

DTC013ZUBTL

BAGIAN SAHAM: 142659

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 1 kOhms, Resistor - Basis Emitor (R2): 10 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V,

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DRC2143Z0L
Panasonic Electronic Components

DRC2143Z0L

BAGIAN SAHAM: 109822

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 4.7 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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DRC9143E0L
Panasonic Electronic Components

DRC9143E0L

BAGIAN SAHAM: 167939

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 4.7 kOhms, Resistor - Basis Emitor (R2): 4.7 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 10V,

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UNR5116G0L
Panasonic Electronic Components

UNR5116G0L

BAGIAN SAHAM: 1929

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 4.7 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

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UNR511300L
Panasonic Electronic Components

UNR511300L

BAGIAN SAHAM: 2153

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 47 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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UNR31AN00L
Panasonic Electronic Components

UNR31AN00L

BAGIAN SAHAM: 1964

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 80mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 4.7 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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DRC2123J0L
Panasonic Electronic Components

DRC2123J0L

BAGIAN SAHAM: 123616

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 2.2 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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DRC5144E0L
Panasonic Electronic Components

DRC5144E0L

BAGIAN SAHAM: 109531

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 47 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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UNR92AEG0L
Panasonic Electronic Components

UNR92AEG0L

BAGIAN SAHAM: 1911

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 80mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 47 kOhms, Resistor - Basis Emitor (R2): 22 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V,

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UNR9219J0L
Panasonic Electronic Components

UNR9219J0L

BAGIAN SAHAM: 184557

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 1 kOhms, Resistor - Basis Emitor (R2): 10 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V,

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PDTC144VE,115
NXP USA Inc.

PDTC144VE,115

BAGIAN SAHAM: 2001

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 47 kOhms, Resistor - Basis Emitor (R2): 10 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 40 @ 5mA, 5V,

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PDTA144VS,126
NXP USA Inc.

PDTA144VS,126

BAGIAN SAHAM: 3259

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 47 kOhms, Resistor - Basis Emitor (R2): 10 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 40 @ 5mA, 5V,

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DDTC123TUA-7-F
Diodes Incorporated

DDTC123TUA-7-F

BAGIAN SAHAM: 162568

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 2.2 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V,

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DDTC123ECA-7-F
Diodes Incorporated

DDTC123ECA-7-F

BAGIAN SAHAM: 183990

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 2.2 kOhms, Resistor - Basis Emitor (R2): 2.2 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V,

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DDTA144TE-7-F
Diodes Incorporated

DDTA144TE-7-F

BAGIAN SAHAM: 115078

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V,

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DDTC144GE-7-F
Diodes Incorporated

DDTC144GE-7-F

BAGIAN SAHAM: 106919

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V,

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DDTB122LU-7
Diodes Incorporated

DDTB122LU-7

BAGIAN SAHAM: 1945

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 500mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 220 Ohms, Resistor - Basis Emitor (R2): 10 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V,

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DDTC144VCA-7-F
Diodes Incorporated

DDTC144VCA-7-F

BAGIAN SAHAM: 108536

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 47 kOhms, Resistor - Basis Emitor (R2): 10 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V,

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DDTC123TCA-7-F
Diodes Incorporated

DDTC123TCA-7-F

BAGIAN SAHAM: 112608

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 2.2 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V,

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DDTC114WKA-7-F
Diodes Incorporated

DDTC114WKA-7-F

BAGIAN SAHAM: 1929

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 10 kOhms, Resistor - Basis Emitor (R2): 4.7 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 24 @ 10mA, 5V,

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DDTA143XKA-7-F
Diodes Incorporated

DDTA143XKA-7-F

BAGIAN SAHAM: 1907

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 4.7 kOhms, Resistor - Basis Emitor (R2): 10 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V,

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DDTA114WE-7-F
Diodes Incorporated

DDTA114WE-7-F

BAGIAN SAHAM: 111154

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 10 kOhms, Resistor - Basis Emitor (R2): 4.7 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 24 @ 10mA, 5V,

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DDTA113ZCA-7
Diodes Incorporated

DDTA113ZCA-7

BAGIAN SAHAM: 1972

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 1 kOhms, Resistor - Basis Emitor (R2): 10 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V,

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DDTA123JKA-7-F
Diodes Incorporated

DDTA123JKA-7-F

BAGIAN SAHAM: 1901

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 2.2 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

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DDTC123TCA-7
Diodes Incorporated

DDTC123TCA-7

BAGIAN SAHAM: 138385

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 2.2 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V,

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NSVDTC123JET1G
ON Semiconductor

NSVDTC123JET1G

BAGIAN SAHAM: 119366

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 2.2 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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NSBA114YF3T5G
ON Semiconductor

NSBA114YF3T5G

BAGIAN SAHAM: 119130

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 10 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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FJN3302RTA
ON Semiconductor

FJN3302RTA

BAGIAN SAHAM: 118552

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 10 kOhms, Resistor - Basis Emitor (R2): 10 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V,

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FJV3102RMTF
ON Semiconductor

FJV3102RMTF

BAGIAN SAHAM: 155941

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 10 kOhms, Resistor - Basis Emitor (R2): 10 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V,

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MUN5235T1
ON Semiconductor

MUN5235T1

BAGIAN SAHAM: 1934

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 2.2 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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RN2103CT(TPL3)
Toshiba Semiconductor and Storage

RN2103CT(TPL3)

BAGIAN SAHAM: 3230

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 50mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 20V, Resistor - Basis (R1): 22 kOhms, Resistor - Basis Emitor (R2): 22 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V,

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PDTA143ZU,115
Nexperia USA Inc.

PDTA143ZU,115

BAGIAN SAHAM: 147797

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 4.7 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V,

Untuk Wishlist.